Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices
A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.
1. A light-emitting device, comprising:
an electron blocking layer comprising a first AlGaInP material;
a hole blocking layer comprising a second AlGaInP material with a composition represented as (Al x Ga (1-x) ) 1-y In y P, where 0.4≤x≤1 and 0.49≤y≤0.7, and a greater ratio of indium than a ratio of indium in the first AlGaInP layer; and
an active layer between the hole blocking layer and the electron blocking layer.
2. The light-emitting device of claim 1 , wherein the electron blocking layer has a tensile strain and the hole blocking layer has a compressive strain.
3. The light-emitting device of claim 1 , wherein:
the hole blocking layer comprises a first n-type layer and a second n-type layer,
the first n-type layer is unstrained, and
the second n-type layer is strained compressively.
4. The light-emitting device of claim 3 , wherein the first n-type layer has a composition represented as (Al x Ga (1-x) ) 1-y In y P, where 0.4≤x≤1 and y=0.49.
5. The light-emitting device of claim 1 , wherein the active layer comprises a first barrier having a tensile strain, a second barrier layer having a tensile strain, and a well layer between the first barrier layer and the second barrier layer.
6. The light-emitting device of claim 1 , wherein the electron blocking layer has a composition represented as (Al x Ga (1-x) ) 1-y In y P, where 0.4<x<1 and 0.2<y<0.7.
7. The light-emitting device of claim 1 , wherein:
the electron blocking layer comprises a first p-type layer and a second p-type layer,
the first p-type layer is unstrained, and
the second p-type layer has a tensile strain.
8. The light-emitting device of claim 1 , further comprising a GaAs substrate, wherein:
the hole blocking layer, the electron blocking layer, and the active layer are formed on the same side of the GaAs substrate, and each of the hole blocking layer, the electron blocking layer, and the active layer is formed of a respective AlGaInP material.
9. The light-emitting device of claim 1 , wherein the active layer comprises at least one well structure, the well structure including a first barrier layer that has a tensile strain, a second barrier layer that has a tensile strain, and a well layer disposed between the first barrier layer and the second barrier layer,
wherein the electron blocking layer is part of one of an upper confinement layer of the light emitting device and a lower confinement layer of the light-emitting device, and
wherein the hole blocking layer is part of the other one of the upper confinement layer of the light emitting device and the lower confinement layer of the light-emitting device.
10. The light-emitting device of claim 9 , wherein the second material has a composition represented as (Al x Ga (1-x) ) 1-y In y P, where 0.4<x<1 and 0.49<y<0.7.
11. The light-emitting device of claim 9 , wherein:
the hole blocking layer includes a first n-type layer and a second n-type layer,
the first n-type layer is unstrained,
the second n-type layer is strained compressively, and
the first n-type layer has a composition represented as (Al x Ga (1-x) ) 1-y In y P, where 0≤x≤1 and 0.49≤y≤1.
12. The light-emitting device of claim 9 , wherein the electron blocking layer has a composition represented as (Al x Ga (1-x) ) 1-y In y P, where 0.4≤x≤1 and 0.2≤y≤0.7.
13. The light-emitting device of claim 9 , wherein the electron blocking layer includes a first unstrained p-type layer and a second p-type layer having a tensile strain.
14. A light-emitting device, comprising:
an electron blocking layer;
a hole blocking layer including a first n-type layer comprising a first AlGaInP material and a second n-type layer comprising a second AlGaInP material that has a greater indium ratio that the first AlGaInP material; and
an active layer between the hole blocking layer and the electron blocking layer.
15. The light-emitting device of claim 14 , wherein the second n-type layer is closer to the active layer than the first n-type layer, and the indium-ratio of the second material is greater than 0.49.
16. The light-emitting device of claim 14 , wherein the second n-type layer has a thickness that is less than a critical thickness associated with the second material.
17. The light-emitting device of claim 14 , wherein the electron blocking layer includes a first unstrained p-type layer and a second p-type layer has a tensile strain.
18. The light-emitting device of claim 1 , wherein the active layer is configured to emit a wavelength in the range of 570-680 nm.
19. The light-emitting device of claim 1 , wherein the active layer comprises at least one well structure and a degree of confinement of electrons provided by the electron blocking layer is proportional to a conduction band offset between the electron blocking layer and the at least one well structure.
20. A light-emitting device, comprising:
an electron blocking layer comprising a first AlGaInP material, at least a portion of the electron blocking layer having a tensile strain;
a hole blocking layer comprising a second AlGaInP material that has a greater indium ratio than the first AlGaInP material, at least a portion of the hole blocking layer having a compressive strain; and
an active layer between the hole blocking layer and the electron blocking layer.