Optoelectronic semiconductor component having a contact structure, and method for producing a contact structure for an optoelectronic semiconductor component
A method for producing a contact structure for an optoelectronic semiconductor component is given, comprising the steps: a) providing a growth substrate having a semiconductor body which is grown thereon and comprises a first and a second region, and an active region, b) creating at least one first recess which, starting from the second region, extends completely through the active region into the first region and does not completely penetrate the first region, c) inserting a first electrically conductive contact material into the first recess, d) fixing the semiconductor body with the side facing away from the growth substrate on a support substrate, and detaching the growth substrate from the semiconductor body, e) creating at least one second recess extending from the first region to the first recess so that the first recess and the second recess form a feedthrough through the semiconductor body, f) introducing a second electrically conductive contact material into the second recess in such a way that the first and second contact materials form an electrically conductive contact structure through the semiconductor body. Furthermore, an optoelectronic semiconductor component with a contact structure is specified.
1. Method for producing a contact structure for an optoelectronic semiconductor component, comprising the steps:
a) providing a growth substrate with a semiconductor body which is grown thereon and comprises a first region, a second region and an active region suitable for generating or detecting electromagnetic radiation, wherein the first region is arranged between the growth substrate and the active region, and wherein the active region is arranged between the first region and the second region,
b) creating a first recess which, starting from the second region, extends completely through the active region into the first region and does not completely penetrate the first region, wherein the first recess has the shape of a cone, truncated cone, pyramid or truncated pyramid, and the first recess on the side of the first region remote from the active region has a cross-section parallel to a main plane of extension with a first surface area,
c) inserting a first electrically conductive contact material into the first recess,
d) fixing the semiconductor body with the side of the semiconductor body facing away from the growth substrate on a support substrate, and detaching the growth substrate from the semiconductor body,
e) creating a second recess which has the shape of a cone, a truncated cone, a pyramid or a truncated pyramid and which extends from the first region to the first recess so that the first recess and the second recess form a feedthrough through the semiconductor body, wherein the second recess on the side of the second region remote from the active region, has a cross-section parallel to the main plane of extension with a second surface area, the first surface area being smaller than the second surface area,
f) introducing a second electrically conductive contact material into the second recess such that the first contact material and the second contact material form an electrically conductive contact structure through the semiconductor body, whereby
in method step e) the second recess is formed up to at least one marking layer which has a known dopant ratio and is arranged within the first region.
2. Method for producing a contact structure for an optoelectronic semiconductor component according to claim 1 , in which
between process steps b) and c) an electrically insulating layer is introduced into the first recess, which is partially removed between process steps e) and f), so that the first contact material is partially exposed.
3. Method for producing a contact structure for an optoelectronic semiconductor component according to claim 1 , in which
the first contact material and the second contact material have the same composition.
4. Method for producing a contact structure for an optoelectronic semiconductor component according to claim 1 , in which
the first recess tapers from the second region towards the first region, and/or the second recess tapers from the first region towards the second region.
5. Method for producing a contact structure for an optoelectronic semiconductor component according to claim 1 , in which
the semiconductor body is based on a gallium phosphide-, an aluminum phosphide-, an indium phosphide-, a gallium aluminum phosphide-, a gallium indium phosphide-, an indium aluminum phosphide- or a gallium aluminum indium phosphide-compound semiconductor material or on a gallium arsenide-, an aluminum arsenide-, an indium arsenide-, a gallium aluminum arsenide-, a gallium indium arsenide-, an indium aluminum arsenide- or a gallium aluminum indium arsenide-compound semiconductor material.
6. Method for producing a contact structure for an optoelectronic semiconductor component according to claim 2 , in which
the electrically insulating layer comprises a dielectric layer.
7. Optoelectronic semiconductor component having a contact structure, comprising a semiconductor body with a first region, a second region and an active region suitable for generating or detecting electromagnetic radiation, and a main plane of extension, wherein
in a direction perpendicular to the main plane of extension, the first region, the active region and the second region follow each other,
the contact structure comprises a feedthrough in the semiconductor body extending from the first region to the second region and penetrating the active region, in which feedthrough a contact material is arranged,
the feedthrough has a cross-section parallel to the main plane of extension, the area of which varies from the first region to the second region and has a minimum within the semiconductor body, and wherein the feedthrough comprises a tapered partial region on the side of the first region and/or of the second region, and
a marking layer which has a known dopant ratio is arranged within the first region, and
the feedthrough on the side of the first region remote from the active region has a cross-section parallel to the main plane of extension with a first surface area and on the side of the second region remote from the active region has a cross-section parallel to the main plane of extension with a second surface area, the first surface area being smaller than the second surface area.
8. Optoelectronic semiconductor component with a contact structure according to claim 7 , in which
an electrically insulating, preferably dielectric layer is arranged in the feedthrough between the contact material and the adjacent semiconductor body.
9. Optoelectronic semiconductor component with a contact structure according to claim 7 , in which
the feedthrough on the side of the first region and the second region each has a conically shaped partial region and the conically shaped partial regions are axially aligned with one another.
10. Optoelectronic semiconductor component with a contact structure according to claim 7 , wherein
the semiconductor body is based on a gallium phosphide-, an aluminum phosphide-, an indium phosphide-, a gallium aluminum phosphide-, a gallium indium phosphide-, an indium aluminum phosphide- or a gallium aluminum indium phosphide-compound semiconductor material or on a gallium arsenide-, an aluminum arsenide-, an indium arsenide-, a gallium aluminum arsenide-, a gallium indium arsenide-, an indium aluminum arsenide- or a gallium aluminum indium arsenide-compound semiconductor material.
11. Method for producing a contact structure for an optoelectronic semiconductor component according to claim 7 , in which
the tapered partial region is conical or pyramid shaped.
12. Method for producing a contact structure for an optoelectronic semiconductor component, comprising the steps:
a) providing a growth substrate with a semiconductor body which is grown thereon and comprises a first region, a second region and an active region suitable for generating or detecting electromagnetic radiation, wherein the first region is arranged between the growth substrate and the active region, and wherein the active region is arranged between the first region and the second region,
b) creating a first recess which, starting from the second region, extends completely through the active region into the first region and does not completely penetrate the first region, wherein the first recess has the shape of a cone, truncated cone, pyramid or truncated pyramid,
c) inserting a first electrically conductive contact material into the first recess,
d) fixing the semiconductor body with the side of the semiconductor body facing away from the growth substrate on a support substrate, and detaching the growth substrate from the semiconductor body,
e) creating a second recess which has the shape of a cone, a truncated cone, a pyramid or a truncated pyramid and which extends from the first region to the first recess so that the first recess and the second recess form a feedthrough through the semiconductor body,
f) introducing a second electrically conductive contact material into the second recess such that the first contact material and the second contact material form an electrically conductive contact structure through the semiconductor body, whereby
in method step e) the second recess is formed up to at least one marking layer which has a known dopant ratio and is arranged within the first region, and whereby
in method step f) the second electrically conductive contact material is in direct contact with the first semiconductor material.