Light emitting device and method for manufacturing a light emitting device
A light-emitting device and a method for manufacturing a light-emitting device are disclosed. In an embodiment a light-emitting device includes a light-emitting semiconductor chip with a light-outcoupling surface surrounded laterally by a first reflective material in a form-locking manner, a foil element on the light-outcoupling surface, an optical element on the foil element laterally surrounded by a second reflective material in a form-locking manner and a gas-filled gap located at least in a partial region between the foil element and the optical element.
1. A light-emitting device comprising:
a light-emitting semiconductor chip with a light-outcoupling surface surrounded laterally by a first reflective material in a form-locking manner;
a foil element on the light-outcoupling surface;
an optical element on the foil element laterally surrounded by a second reflective material in a form-locking manner; and
a gas-filled gap located at least in a partial region between the foil element and the optical element,
wherein the light-emitting device has laterally delimiting side surfaces comprising side surfaces of the first reflective material, the foil element and the second reflective material.
2. The light-emitting device according to claim 1 , wherein the foil element has a top side facing away from the light-emitting semiconductor chip and the optical element has a bottom side facing the light-emitting semiconductor chip, and wherein the top side of the foil element and the bottom side of the optical element are at least partially spaced apart from one another thereby forming the gap.
3. The light-emitting device according to claim 2 , wherein the optical element has a recess in the bottom side surrounded by a rim.
4. The light-emitting device according to claim 1 , wherein the optical element is a lens element.
5. The light-emitting device according to claim 1 , wherein the first and second reflective materials are the same.
6. The light-emitting device according to claim 1 , wherein the optical element has a channel connecting the gap to an atmosphere surrounding the light-emitting device.
7. The light-emitting device according to claim 1 , wherein the gap is air-filled.
8. The light-emitting device according to claim 1 , wherein the light-emitting semiconductor chip is a flip chip configured to be electrically contactable on a rear side opposite the light-outcoupling surface.
9. The light-emitting device according to claim 1 , wherein the foil element contains a wavelength conversion material.
10. The light-emitting device according to claim 1 , wherein the foil element is transparent to light generatable by the light-emitting semiconductor chip during operation.
11. The light-emitting device according to claim 1 , wherein the optical element has at least one side surface with a step or a stop structure.
12. A method for manufacturing a light-emitting device wherein the light-emitting device comprises a light-emitting semiconductor chip with a light-outcoupling surface surrounded laterally by a first reflective material in a form-locking manner, a foil element on the light-outcoupling surface, an optical element on the foil element laterally surrounded by a second reflective material in a form-locking manner and a gas-filled gap located at least in a partial region between the foil element and the optical element, the method comprising:
providing a plurality of light-emitting semiconductor chips on a temporary carrier such that light-outcoupling surfaces of the light-emitting semiconductor chips face away from the temporary carrier;
laterally enveloping the light-emitting semiconductor chips with the first reflective material so that the first reflective material surrounds each of the light-emitting semiconductor chips laterally in the form-locking manner;
applying a continuous foil on the light-outcoupling surfaces of the light-emitting semiconductor chips;
arranging a plurality of optical elements on the continuous foil;
laterally enveloping the optical elements with the second reflective material so that the second reflective material surrounds each of the optical elements laterally in the form-locking manner; and
separating the first and second reflective materials to form a plurality of singulated light-emitting devices.
13. The method according to claim 12 , wherein the continuous foil, after applying, covers the plurality of the light-emitting semiconductor chips and the first reflective material.
14. The method according to claim 12 , wherein, when the first and second reflective materials are separated, the continuous foil is also cut through to form a plurality of foil elements.
15. The method according to claim 12 , wherein the continuous foil is sticky when the optical elements are applied.
16. The method according to claim 15 , wherein the continuous foil is not completely cured when the optical elements are applied.
17. The method according to claim 12 , wherein separating comprises sawing.
18. A light-emitting device comprising:
a light-emitting semiconductor chip with a light-outcoupling surface surrounded laterally by a first reflective material in a form-locking manner;
a foil element on the light-outcoupling surface;
an optical element on the foil element laterally surrounded by a second reflective material in a form-locking manner; and
a gas-filled gap located at least in a partial region between the foil element and the optical element,
wherein the optical element has a channel connecting the gap to an atmosphere surrounding the light-emitting device.
19. The light-emitting device according to claim 18 , wherein the optical element is a lens element.
20. The light-emitting device according to claim 18 , wherein the first and second reflective materials are the same.