Optoelectronic component having a reflection element with diffuser particles and filler particles embedded therein
An optoelectronic component may include a semiconductor chip configured to emit radiation and a reflection element disposed in the beam path of the semiconductor chip where the reflection element is configured to reflect radiation. The reflection element may include a matrix material having diffuser particles and filler particles embedded therein. The diffuser particles are different from the filler particles. The filler particles may include a matrix having scatter particles embedded therein and/or a ceramic comprising the scatter particles in sintered form.
1. An optoelectronic component comprising:
a semiconductor chip configured to emit radiation;
a housing comprising sidewalls with a recess between the sidewalls; wherein the semiconductor chip is arranged in the recess; and wherein the sidewalls comprise a reflection element configured to reflect radiation emitted from the semiconductor chip;
wherein the reflection element has a matrix material with diffuser particles and filler particles embedded therein,
wherein the diffuser particles are different from the filler particles;
wherein the filler particles comprise a matrix having scatter particles embedded therein;
wherein the diffuser particles consist of titanium dioxide,
wherein the matrix material is an epoxy molding compound,
wherein the filler particles comprise a silicate glass as the matrix having titanium dioxide scatter particles embedded therein, wherein an amount of the titanium dioxide scatter particles in the matrix ranges from 45 wt % to 70 wt % in relation to the total matrix material,
wherein an amount of the diffuser particles in the reflection element ranges from 45 wt % to 70 wt % in relation to the total matrix material,
wherein the average particle diameter of the diffuser particles is less than the average particle diameter of the filler particles.
2. The optoelectronic component as claimed in claim 1 , wherein the diffuser particles have the average particle diameter smaller by a factor of at least 10 as compared to the filler particles.
3. The optoelectronic component as claimed in claim 1 , wherein the concentration of the scatter particles in the filler particles corresponds to the concentration of the diffuser particles in the material.
4. The optoelectronic component as claimed in claim 1 , wherein an amount of the diffuser particles ranges from 10 wt % to 30 wt % in the reflection element.
5. The optoelectronic component as claimed in claim 1 , wherein the filler particles have a particle diameter ranging from 25 μm to 50 μm.
6. The optoelectronic component as claimed in claim 1 , wherein the reflection element serves to insulate a printed circuit board.
7. The optoelectronic component as claimed in claim 1 , wherein the housing is in direct contact with a carrier.
8. A process for producing the optoelectronic component as claimed in claim 1 , wherein the process comprises: providing the semiconductor chip configured to emit radiation; producing the reflection element by: providing the matrix material; embedding the diffuser particles and the filler particles into the matrix material, wherein the diffuser particles are different from the filler particles; wherein the filler particles comprise the silicate glass matrix having the scatter particles embedded therein; and disposing the reflection element in the beam path of the semiconductor chip.