IP Library Granted Patent US 10,903,757
Granted Patent B2
US 10,903,757 · App. 16/637,838 · Granted Jan 26, 2021

Power module for a converter and multi-level converter

Inventors: Hans-Guenter Eckel (Rostock, DE); Daniel Schmitt (Postbauer-Heng, DE); Frank Schremmer (Fuerth, DE); Marcus Wahle (Veitsbronn, DE)
Assignee: Siemens Aktiengesellschaft
H02M7/483H02M1/32H02M2007/4835
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Quick Facts
Patent No.
US 10,903,757
App. No.
16/637,838
Granted
Jan 26, 2021
Kind
B2
Abstract

A power module for a converter, in particular for a multilevel converter. The power module includes a link circuit capacitor, two connection terminals, at least one half-bridge connected in parallel with the link circuit capacitor and having two semiconductor switches, and, for each half-bridge, a bypass diode connected in parallel with a first semiconductor switch of the half-bridge and a load-relief circuit group connected in parallel with the first semiconductor switch. The load-relief circuit group has a load-relief thyristor and a load-relief diode connected in series with the load-relief thyristor.

Claims (33)

1. A power module for a converter, the power module comprising:

an intermediate circuit capacitor;

two connection terminals;

one half-bridge connected in parallel with said intermediate circuit capacitor and having two semiconductor switches;

said two semiconductor switches including a first semiconductor switch having an input side and an output side, each directly electrically connected to a respective one of said connection terminals;

a bypass diode connected in parallel with said first semiconductor switch of said half-bridge and a load-relief circuit unit connected in parallel with said first semiconductor switch; and

said load-relief circuit unit including a load-relief thyristor, a load-relief diode connected in series with said load-relief thyristor, and a smoothing capacitor connected in parallel with said load-relief thyristor.

2. The power module according to claim 1 , configured for integration in a multi-level converter.

3. The power module according to claim 1 , wherein said bypass diode is a disk diode.

4. The power module according to claim 1 , wherein an anode of said load-relief diode and a cathode of said bypass diode are directly electrically connected to a center tap of said at least one half-bridge, and a cathode of said load-relief diode is directly electrically connected to an anode of said load-relief thyristor.

5. The power module according to claim 4 , wherein the cathode of said load-relief diode is electrically connected, via a connecting resistor, to one electrode of said intermediate circuit capacitor, and the one electrode is connected to said second semiconductor switch.

6. The power module according to claim 1 , wherein said load-relief diode has a cathode that is electrically connected, via a connecting resistor, to one electrode of said intermediate circuit capacitor, and the one electrode is connected to said second semiconductor switch.

7. The power module according to claim 1 , wherein each of said two semiconductor switches comprises a bipolar transistor having an insulated gate electrode and a freewheeling diode connected in an antiparallel arrangement to said bipolar transistor.

8. The power module according to claim 1 , wherein said load-relief diode is a disk diode.

9. The power module according to claim 1 , wherein said load-relief thyristor is a disk thyristor.

10. A modular multi-level converter, comprising a plurality of power modules each according to claim 1 .

11. A power module for a converter, the power module comprising:

an intermediate circuit capacitor having first and second electrodes;

two connection terminals;

at least one half-bridge connected in parallel with said intermediate circuit capacitor and having two semiconductor switches; and

for each of said at least one half-bridge, a bypass diode connected in parallel with a first semiconductor switch of said two semiconductor switches of said half-bridge and a load-relief circuit unit connected in parallel with said first semiconductor switch;

said load-relief circuit unit including a load-relief thyristor and a load-relief diode connected in series with said load-relief thyristor, said load-relief diode having a cathode that is electrically connected, via a connecting resistor, to said second electrode of said intermediate circuit capacitor, and said second electrode being connected to said second semiconductor switch.

12. The power module according to claim 11 , configured for integration in a multi-level converter.

13. The power module according to claim 11 , wherein:

said at least one half-bride is exactly one half-bridge connected in parallel with said intermediate circuit capacitor;

said first semiconductor switch has an input side and an output side, each directly electrically connected to a respective one of said connection terminals; and

said load-relief circuit unit includes a smoothing capacitor connected in parallel with said load-relief thyristor.

14. The power module according to claim 11 , wherein said bypass diode is a disk diode.

15. The power module according to claim 11 , wherein an anode of said load-relief diode and a cathode of said bypass diode are directly electrically connected to a center tap of said at least one half-bridge, and a cathode of said load-relief diode is directly electrically connected to an anode of said load-relief thyristor.

16. The power module according to claim 11 , wherein each of said two semiconductor switches comprises a bipolar transistor having an insulated gate electrode and a freewheeling diode connected in an antiparallel arrangement to said bipolar transistor.

17. The power module according to claim 11 , wherein said load-relief diode is a disk diode.

18. The power module according to claim 11 , wherein said load-relief thyristor is a disk thyristor.

19. A modular multi-level converter, comprising a plurality of power modules each according to claim 11 .

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2021
From: SIEMENS AKTIENGESELLSCHAFT
To: SIEMENS ENERGY GLOBAL GMBH & CO. KG
Reel/Frame 058597/0317 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 19, 2020
From: UNIVERSITAET ROSTOCK
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 053538/0466 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 13, 2020
From: ECKEL, HANS-GUENTER
To: UNIVERSITAET ROSTOCK
Reel/Frame 053489/0487 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 13, 2020
From: SCHMITT, DANIEL; SCHREMMER, FRANK; WAHLE, MARCUS
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 053489/0541 →