Fabricating a device using a multilayer stack
A method of fabricating a device is presented. The method includes forming a multilayer stack ( 101′, 102′, 103 ′) on a substrate ( 10′, 100 ′) which has a principal surface. The multilayer stack includes a supporting layer ( 102 ′) formed over the principal surface of the substrate and a photoresist layer ( 103 ′) formed on the supporting layer, patterning the multilayer stack to form at least one opening such that the photoresist layer is undercut by the supporting layer and anisotropically dry etching the substrate.
1. A method of fabricating a device, comprising:
forming a multilayer stack on a substrate which has a principal surface, the multilayer stack comprising:
a first layer formed on the principal surface of the substrate, wherein the first layer is a first polymeric material;
a supporting layer formed on the first layer, wherein the supporting layer is a second polymeric material; and
a photoresist layer formed on the supporting layer;
patterning the multilayer stack to form at least one opening such that the photoresist layer is undercut by the supporting layer and the supporting layer is overcut by the first layer, wherein patterning the multilayer stack comprises simultaneously developing the photoresist layer and the supporting layer using a developer, wherein a portion of the supporting layer corresponding to the at least one opening is soluble in the developer, wherein the developer is an alkaline developer; and
anisotropically dry etching the substrate.
2. The method of claim 1 wherein the photoresist layer and the first layer have respective edges which are aligned.
3. The method of claim 1 , wherein the first polymeric material is sensitive to electron-beam irradiation.
4. The method of claim 1 , wherein the first polymeric material is methyl methacrylate.
5. The method of claim 1 , wherein the first polymeric material is poly methyl methacrylate.
6. The method of claim 1 , wherein the first polymeric material is methacrylic acid.
7. The method of claim 1 , wherein the second polymeric material is sensitive to electron-beam irradiation.
8. The method of claim 1 , wherein the second polymeric material is polymethylglutarimide.
9. The method of claim 1 , wherein the second polymeric material is methyl methacrylate.
10. The method of claim 1 , wherein the second polymeric material is polymethylmethacrylate.
11. The method of claim 1 , wherein the second polymeric material is methacrylic acid.
12. The method of claim 1 , wherein patterning the multilayer stack includes:
performing plasma ashing.
13. The method of claim 1 , wherein the device is a quantum information processing device.
14. The method of claim 1 , wherein the substrate comprises a layer of aluminum disposed on a silicon substrate.