Semiconductor device with higher breakdown voltage and electronic apparatus
A semiconductor device including a first conductivity-type layer into which first conductivity-type impurities are introduced, a second conductivity-type layer into which second conductivity-type impurities are introduced, the second conductivity-type impurities being different in polarity from the first conductivity-type impurities, and an intermediate layer that is sandwiched between the first conductivity-type layer and the second conductivity-type layer, and does not include the first conductivity-type impurities or the second conductivity-type impurities, or includes the first conductivity-type impurities or the second conductivity-type impurities at a concentration lower than a concentration of the first conductivity-type impurities in the first conductivity-type layer or the second conductivity-type impurities in the second conductivity-type layer, the first conductivity-type layer, the intermediate layer, and the second conductivity-type layer being stacked in a thickness direction of a semiconductor substrate inside the semiconductor substrate.
1. A semiconductor device, comprising:
a first conductivity-type layer that comprises first conductivity-type impurities;
a second conductivity-type layer that comprises second conductivity-type impurities, wherein the second conductivity-type impurities are different in polarity from the first conductivity-type impurities;
an intermediate layer sandwiched between the first conductivity-type layer and the second conductivity-type layer, wherein
the intermediate layer does not include the first conductivity-type impurities or the second conductivity-type impurities, or includes one of the first conductivity-type impurities or the second conductivity-type impurities at a concentration lower than a concentration of one of the first conductivity-type impurities in the first conductivity-type layer or the second conductivity-type impurities in the second conductivity-type layer, and
the first conductivity-type layer, the intermediate layer, and the second conductivity-type layer are stacked in a thickness direction of a semiconductor substrate inside the semiconductor substrate; and
a separating layer between each of the first conductivity-type layer, the intermediate layer, and the second conductivity-type layer and the semiconductor substrate, wherein the separating layer isolates each of the first conductivity-type layer, the intermediate layer, and the second conductivity-type layer from the semiconductor substrate, wherein
a stacking body of the first conductivity-type layer, the intermediate layer, and the second conductivity-type layer penetrates through the semiconductor substrate in the thickness direction of the semiconductor substrate,
the first conductivity-type layer is exposed on a first main surface of the semiconductor substrate,
the second conductivity-type layer is exposed on a second main surface of the semiconductor substrate, and
the first main surface is opposite to the second main surface.
2. The semiconductor device according to claim 1 , wherein a cross-sectional shape of the separating layer in the thickness direction of the semiconductor substrate is tapered.
3. The semiconductor device according to claim 1 , wherein at least one of the first conductivity-type layer or the second conductivity-type layer is exposed by an opening in the semiconductor substrate.
4. The semiconductor device according to claim 1 , wherein the intermediate layer includes one of the first conductivity-type impurities or the second conductivity-type impurities at the concentration lower than the concentration of one of the first conductivity-type impurities in the first conductivity-type layer or the second conductivity-type impurities in the second conductivity-type layer.
5. The semiconductor device according to claim 1 , wherein one of the first conductivity-type layer or the second conductivity-type layer is electrically coupled to a via in a multi-layer wiring layer on a main surface of a plurality of main surfaces of the semiconductor substrate.
6. An electronic apparatus, comprising:
a semiconductor device inside a semiconductor substrate, wherein the semiconductor device comprises:
a first conductivity-type layer that comprises first conductivity-type impurities;
a second conductivity-type layer that comprises second conductivity-type impurities, wherein the second conductivity-type impurities are different in polarity from the first conductivity-type impurities;
an intermediate layer sandwiched between the first conductivity-type layer and the second conductivity-type layer, wherein
the intermediate layer does not include the first conductivity-type impurities or the second conductivity-type impurities, or includes one of the first conductivity-type impurities or the second conductivity-type impurities at a concentration lower than a concentration of one of the first conductivity-type impurities in the first conductivity-type layer or the second conductivity-type impurities in the second conductivity-type layer, and
the first conductivity-type layer, the intermediate layer, and the second conductivity-type layer are stacked in a thickness direction of a semiconductor substrate inside the semiconductor substrate; and
a separating layer between each of the first conductivity-type layer, the intermediate layer, and the second conductivity-type layer and the semiconductor substrate, wherein the separating layer isolates each of the first conductivity-type layer, the intermediate layer, and the second conductivity-type layer from the semiconductor substrate, wherein
a stacking body of the first conductivity-type layer, the intermediate layer, and the second conductivity-type layer penetrates through the semiconductor substrate in the thickness direction of the semiconductor substrate,
the first conductivity-type layer is exposed on a first main surface of the semiconductor substrate,
the second conductivity-type layer is exposed on a second main surface of the semiconductor substrate, and
the first main surface is opposite to the second main surface.