Semiconductor body and method for producing a semiconductor body
A semiconductor body and a method for producing a semiconductor body are disclosed. In an embodiment a semiconductor body includes a p-conducting region, wherein the p-conducting region has at least one barrier zone and a contact zone, wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, wherein the contact zone has a second magnesium concentration and a second aluminum concentration, wherein the first aluminum concentration is greater than the second aluminum concentration, wherein the first magnesium concentration is at least ten times less than the second magnesium concentration, wherein the contact zone forms an outwardly exposed surface of the semiconductor body, and wherein the barrier zone adjoins the contact zone, and wherein the semiconductor body is based on a nitride compound semiconductor material.
1. A semiconductor body comprising:
a p-conducting region having at least one barrier zone and a contact zone,
wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, the first magnesium concentration and the first aluminum concentration being larger than zero,
wherein the contact zone has a second magnesium concentration and a second aluminum concentration, the second magnesium concentration and the second aluminum concentration being larger than zero,
wherein the first aluminum concentration is greater than the second aluminum concentration,
wherein the first magnesium concentration is at least ten times less than the second magnesium concentration,
wherein the contact zone forms an outwardly exposed surface of the semiconductor body,
wherein the barrier zone adjoins the contact zone,
wherein the semiconductor body is based on a nitride compound semiconductor material, and
wherein a rate of change of a magnesium concentration along a growth direction of the semiconductor body upon a transition from the barrier zone to the contact zone is at least ±1×10 20 atoms/cm 3 per μm.
2. The semiconductor body of claim 1 , wherein the first aluminum concentration is between 4.4×10 19 atoms/cm 3 and 1.8×10 22 atoms/cm 3 inclusive.
3. The semiconductor body of claim 1 , wherein the second magnesium concentration is between 0.5×10 19 atoms/cm 3 and 1×10 20 atoms/cm 3 inclusive.
4. The semiconductor body of claim 1 , wherein the contact zone has a thickness of between 0.5 nm and 100 nm inclusive perpendicular to its main plane of extension.
5. The semiconductor body of claim 1 , wherein the contact zone has a thickness of between 0.5 nm and 20 nm inclusive perpendicular to its main plane of extension.
6. The semiconductor body of claim 1 , wherein the semiconductor body has a larger band gap in the barrier zone than in the contact zone.
7. The semiconductor body of claim 1 , wherein the first aluminum concentration within the barrier zone firstly increases in a growth direction until it has a maximum value, and subsequently decreases again in the growth direction.
8. A semiconductor body comprising:
a p-conducting region having a barrier zone and a contact zone,
wherein the barrier zone comprises a semiconductor material of the fifth main group and a semiconductor material of the third main group in a first ratio,
wherein the contact zone comprises a semiconductor material of the fifth main group and a semiconductor material of the third main group in a second ratio,
wherein the first ratio is less than the second ratio,
wherein the semiconductor body is based on a nitride compound semiconductor material, and
wherein a rate of change of a magnesium concentration along a growth direction of the semiconductor body upon a transition from the barrier zone to the contact zone is at least ±1×10 20 atoms/cm 3 per μm.
9. The semiconductor body of claim 8 , wherein the barrier zone has a first magnesium concentration and the contact zone has a second magnesium concentration.
10. The semiconductor body of claim 9 , wherein the second magnesium concentration is at least 0.5×10 19 atoms/cm 3 .
11. The semiconductor body of claim 8 , wherein the semiconductor body has a larger band gap in the barrier zone than in the contact zone.
12. The semiconductor body of claim 8 , wherein the contact zone is nominally free of aluminum.
13. The semiconductor body of claim 12 , wherein the barrier zone has a first aluminum concentration is between 4.4×10 19 atoms/cm 3 and 1.8×10 22 atoms/cm 3 inclusive.
14. The semiconductor body of claim 8 , wherein the contact zone has a thickness of between 0.5 nm and 20 nm inclusive perpendicular to its main plane of extension.
15. A semiconductor body comprising:
a p-conducting region having at least one barrier zone and a contact zone,
wherein the barrier zone has a first magnesium concentration and a first aluminum concentration,
wherein the contact zone has a second magnesium concentration and a second aluminum concentration,
wherein the first aluminum concentration is greater than the second aluminum concentration,
wherein the first magnesium concentration is at least ten times less than the second magnesium concentration,
wherein the contact zone forms an outwardly exposed surface of the semiconductor body,
wherein the barrier zone adjoins the contact zone,
wherein a rate of change of a magnesium concentration along a growth direction of the semiconductor body upon a transition from the barrier zone to the contact zone is at least ±1×10 20 atoms/cm 3 per μm, and
wherein the semiconductor body is based on a nitride compound semiconductor material.