Polyscrystalline diamond compact including erosion and corrosion resistant substrate

1. A polycrystalline diamond compact, comprising:

a substrate including:

a first plurality of carbide grains;

a second plurality of carbide grains including at least vanadium carbide constituting less than 0.5 weight percent (wt %) of the substrate;

a cementing constituent constituting less than 13 wt % of the substrate, the cementing constituent including a cobalt alloy having cobalt and at least one alloying element;

wherein the at least one alloying element constitutes less than 12 wt % of the substrate;

wherein the cobalt constitutes less than 12 wt % of the substrate; and

a polycrystalline diamond table bonded to the substrate;

wherein the substrate includes a fracture toughness of 12.0 MPa⋅m 1/2 to 14.0 MPa⋅m 1/2 .

2. The polycrystalline diamond compact of claim 1 , wherein the at least one alloying element includes at least one Group IB element, at least one Group IIB element, at least one Group IIIB element, at least one Group IVB element, at least one Group VB element, at least one Group VIB element, at least one Group VIIB element, at least one Group VIIIB element, or combinations of the foregoing.

3. The polycrystalline diamond compact of claim 1 , wherein the at least one alloying element includes nickel and wherein the first plurality of carbide grains includes tungsten carbide grains.

4. The polycrystalline diamond compact of claim 1 , wherein the at least one alloying element includes nickel in an amount that is at least 2 wt % of the substrate.

5. The polycrystalline diamond compact of claim 1 , wherein the at least one alloying element includes nickel in an amount that is less than 6 wt % of the substrate.

6. The polycrystalline diamond compact of claim 1 , wherein the at least one alloying element includes nickel in an amount that is less than 6 wt % of the substrate and the cobalt is present in an amount that is less than 6 wt % of the substrate.

7. The polycrystalline diamond compact of claim 1 , wherein the second plurality of carbide grains is a different type of carbide than the first plurality of carbide grains.

8. The polycrystalline diamond compact of claim 7 , wherein:

the substrate includes at least one additive including one or more of rhenium or ruthenium; and

the rhenium is less than 0.5 wt % of the substrate or the ruthenium is less than 3 wt % of the substrate.

9. The polycrystalline diamond compact of claim 8 , wherein the at least one additive is not alloyed with cobalt alloy.

10. The polycrystalline diamond compact of claim 1 , wherein the second plurality of carbide grains includes the at least vanadium carbide constituting about 0.15 wt % to less than 0.5 wt % of the substrate.

11. The polycrystalline diamond compact of claim 1 , wherein carbide grains of the first plurality of carbide grains and the second plurality of carbide grains are bonded together with the cementing constituent, the carbide grains of the first plurality of carbide grains and the second plurality of carbide grains exhibiting an average particle size of about 0.5 μm to about 1.5 μm.

12. The polycrystalline diamond compact of claim 1 , wherein the at least one alloying element includes at least an interstitial alloying element including at least one Group IIIA element, at least one Group IVA element, at least one group VA element, at least one Group VIA Element.

13. The polycrystalline diamond compact of claim 1 , wherein the substrate includes one or more of a density of about 14.0 g/cc to about 15.0 g/cc, a hardness of about 88.0 HRa to about 89.0 HRa, a transverse rupture strength of about 400 ksi to about 550 ksi, or a corrosion rate of about 0.1 mil/year to about 4.0 mil/year.

14. A method of forming a polycrystalline diamond compact, the method comprising:

providing a substrate, the substrate including:

a first plurality of carbide grains;

a second plurality of carbide grains including at least vanadium carbide constituting less than 0.5 weight percent (wt %) of the substrate; and

a cementing constituent constituting less than 13 weight percent (wt %) of the substrate, the cementing constituent including a cobalt alloy having cobalt and at least one alloying element;

wherein the at least one alloying element constitutes less than 12 wt % of the substrate;

wherein the cobalt constitutes less than 12 wt % of the substrate;

disposing a volume of diamond particles adjacent to the substrate to form an assembly; and

subjecting the assembly to a high-pressure high-temperature process to sinter the diamond particles to form a polycrystalline diamond table and to bond the substrate to the polycrystalline diamond table;

wherein the substrate includes a fracture toughness of 12.0 MPa⋅m 1/2 to a 14.0 MPa⋅m 1/2 .

15. The method of claim 14 , wherein the at least one alloying element includes nickel in an amount that is at least 2 wt % of the substrate.

16. The method of claim 14 , wherein the at least one alloying element includes nickel in an amount that is less than 6 wt % of the substrate and the cobalt is present in an amount that is less than 6 wt % of the substrate.

17. The method of claim 14 , wherein the second plurality of carbide grains includes the at least vanadium carbide constituting about 0.15 wt % to less than 0.5 wt % of the substrate.

18. The method of claim 17 , wherein:

the substrate includes at least one additive including one or more of rhenium or ruthenium; and

the rhenium is less than 0.5 wt % of the substrate or the ruthenium is less than 3 wt % of the substrate.

19. A rotary drill bit, comprising:

a bit body configured to engage a subterranean formation; and

a plurality of polycrystalline diamond cutting elements affixed to the bit body, at least one of the polycrystalline diamond cutting elements including:

a substrate including:

a first plurality of carbide grains;

a second plurality of carbide grains including at least vanadium carbide constituting less than 0.5 weight percent (wt %) of the substrate; and

a cementing constituent constituting less than 13 weight percent (wt %) of the substrate, the cementing constituent including a cobalt alloy having cobalt and at least one alloying element;

wherein the at least one alloying element constitutes less than 12 wt % of the substrate;

wherein the cobalt constitutes less than 12 wt % of the substrate; and

a polycrystalline diamond body bonded to the substrate;

wherein the substrate includes a fracture toughness of 12.0 MPa⋅m 1/2 to 14.0 MPa⋅m 1/2 .

20. The rotary drill bit of claim 19 , wherein the at least one substitutional alloying element includes nickel in an amount that is less than 6 wt % of the substrate and the cobalt is present in an amount that is less than 6 wt % of the substrate.

21. The rotary drill bit of claim 19 , wherein the at least one alloying element includes nickel in an amount that is at least 2 wt % of the substrate.

22. The rotary drill bit of claim 19 , wherein the at least one alloying element includes nickel in an amount that is less than 6 wt % of the substrate and the cobalt is present in an amount that is less than 6 wt % of the substrate.

23. The rotary drill bit of claim 19 , wherein the second plurality of carbide grains is a different type of carbide than the first plurality of carbide grains.

24. The rotary drill bit of claim 23 , wherein the second plurality of carbide grains includes the at least vanadium carbide constituting about 0.15 wt % to less than 0.5 wt % of the substrate.

25. The rotary drill bit of claim 19 , wherein:

the substrate includes at least one additive including one or more of rhenium or ruthenium; and

the rhenium is less than 0.5 wt % of the substrate or the ruthenium is less than 3 wt % of the substrate.