Light-emitting semiconductor component

1. A light-emitting semiconductor device having a semiconductor layer sequence based on a phosphide and/or arsenide compound semiconductor material system, wherein

the semiconductor layer sequence comprises a light-emitting semiconductor layer, which is embodied to emit light during operation of the semiconductor device, between a first cladding layer and a second cladding layer, and at least one first semiconductor protection layer,

the first semiconductor protection layer is arranged inside the first cladding layer, wherein the first cladding layer is formed as an outer layer, or the first semiconductor protection layer is arranged as an outer layer directly on the first cladding layer on a side remote from the light-emitting semiconductor layer,

the first semiconductor protection layer has a lower aluminum content than the first cladding layer, and

the first semiconductor protection layer has an aluminum content of more than 0% and less than 12%.

2. The semiconductor device according to claim 1 , wherein the first cladding layer and the first semiconductor protection layer comprise semiconductor materials of the same compound semiconductor material system.

3. The semiconductor device according to claim 1 , wherein the first semiconductor protection layer has a thickness of less than or equal to 100 nm.

4. The semiconductor device according to claim 1 , wherein the first semiconductor protection layer is transparent to the light generated in the light-emitting semiconductor layer during operation of the semiconductor device.

5. A light-emitting semiconductor device having a semiconductor layer sequence based on a phosphide and/or arsenide compound semiconductor material system,

wherein

the semiconductor layer sequence comprises a light-emitting semiconductor layer, which is embodied to emit light during operation of the semiconductor device,

between a first cladding layer and a second cladding layer, and at least one first semiconductor protection layer,

the first semiconductor protection layer is arranged inside the first cladding layer, wherein the first cladding layer is formed as an outer layer,

the first semiconductor protection layer has a lower aluminum content than the first cladding layer, and

the first cladding layer has a roughening on an outer surface remote from the light-emitting semiconductor layer.

6. The semiconductor device according to claim 5 , wherein the roughening has a maximum structure depth of greater than or equal to 200 nm and less than or equal to 1 μm.

7. The semiconductor device according to claim 1 , wherein the semiconductor layer sequence comprises a second semiconductor protection layer on a side of the light-emitting semiconductor layer opposite to the first semiconductor protection layer.

8. The semiconductor device according to claim 7 , wherein the second semiconductor protection layer is arranged as a further outer layer directly on the second cladding layer on a side remote from the light-emitting semiconductor layer.

9. The semiconductor device according to claim 7 , wherein the first and second semiconductor protection layers are based on the same semiconductor material.

10. The semiconductor device according to claim 1 , wherein the semiconductor layer sequence is arranged, with a side facing away from the first semiconductor protection layer, on a substrate.

11. The semiconductor device according to claim 10 , wherein the substrate is a growth substrate on which the semiconductor layer sequence is grown.

12. The semiconductor device ( 100 ) according to claim 1 , wherein the light-emitting semiconductor device is an electroluminescent semiconductor device.

13. The semiconductor device according to claim 1 , wherein the light-emitting semiconductor device is a photoluminescent semiconductor device.

14. The semiconductor device according to claim 5 , wherein the roughening does not extend through the first semiconductor protection layer.