Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting element
A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and a multiple quantum well layer including a barrier layer that includes AlGaN and is located on the n-type cladding layer side, wherein the nitride semiconductor light-emitting element further comprises a trigger layer that is located between the n-type cladding layer and the barrier layer and comprises Si, wherein a plural V-pits starting from dislocations in the n-type cladding layer and ending in the multiple quantum well are formed in the n-type cladding layer and the multiple quantum well layer.
1. A nitride semiconductor light-emitting element, comprising:
an n-type cladding layer comprising n-type AlGaN; and
a multiple quantum well layer comprising a barrier layer that comprises AlGaN and is located on the n-type cladding layer side,
wherein the nitride semiconductor light-emitting element further comprises a trigger layer that is located between the n-type cladding layer and the barrier layer and comprises Si,
wherein a plurality of V-pits starting from dislocations in the n-type cladding layer and ending in the multiple quantum well are formed in the n-type cladding layer and the multiple quantum well layer,
wherein the plurality of V-pits each have a thickness of 10 nm to 20 nm,
wherein the trigger layer directly contacts the multiple quantum well layer and the n-type cladding layer,
wherein the multiple quantum well layer emits deep ultraviolet light with a central wavelength of 250 nm to 350 nm,
wherein the plurality of V-pits each have a circular shape bottom surface with a diameter of not more than 100 nm in a cross section perpendicular to the thickness direction of the nitride semiconductor light-emitting element,
a p-type cladding layer on a surface of the multiple quantum well layer opposite that of the trigger layer,
a p-type contact layer on a surface of the p-type cladding layer opposite that of the multiple quantum well layer; and
an electron blocking layer formed between the multiple quantum well layer and the p-type cladding layer, wherein the electron blocking layer includes AlN.
2. The nitride semiconductor light-emitting element according to claim 1 , wherein the plurality of V-pits each have a substantially inverted cone shape that extends in the thickness direction of the nitride semiconductor light-emitting element.
3. The nitride semiconductor light-emitting element according to claim 1 , wherein a Si concentration in the trigger layer is 5.0×10 9 to 5.0×10 10 times the density of the dislocations in the n-type cladding layer.
4. The nitride semiconductor light-emitting element according to claim 1 , wherein there are no metal nanoparticles filled in each V-pit.
5. A method for manufacturing a nitride semiconductor light-emitting element, comprising:
forming an n-type cladding layer comprising n-type AlGaN on a substrate;
forming a multiple quantum well layer comprising a barrier layer that comprises AlGaN and is located on the n-type cladding layer side; and
forming a trigger layer to directly contact the multiple quantum well layer and the n-type cladding layer, which is located between the n-type cladding layer and the barrier layer and comprises Si,
wherein the forming the trigger layer is performed while adjusting a supplied amount of Si to be 5.0×10 9 to 5.0×10 10 times the density of the dislocations contained in the n-type cladding layer,
wherein a plurality of V-pits starting from dislocations in the n-type cladding layer and ending in the multiple quantum well are formed in the n-type cladding layer and the multiple quantum well layer,
wherein the plurality of V-pits each have a thickness of 10 nm to 20 nm,
wherein the multiple quantum well layer emits deep ultraviolet light with a central wavelength of 250 nm to 350 nm,
wherein the plurality of V-pits each have a circular shape bottom surface with a diameter of not more than 100 nm in a cross section perpendicular to the thickness direction of the nitride semiconductor light-emitting element,
a p-type cladding layer on a surface of the multiple quantum well layer opposite that of the trigger layer,
a p-type contact layer on a surface of the p-type cladding layer opposite that of the multiple quantum well layer; and
an electron blocking layer formed between the multiple quantum well layer and the p-type cladding layer, wherein the electron blocking layer includes AlN.
6. The method for manufacturing a nitride semiconductor light-emitting element according to claim 5 , wherein the plurality of V-pits each have a substantially inverted cone shape that extends in the thickness direction of the nitride semiconductor light-emitting element.
7. The method for manufacturing a nitride semiconductor light-emitting element according to claim 5 , wherein a Si concentration in the trigger layer is 5.0×10 9 to 5.0×10 10 times the density of the dislocations in the n-type cladding layer.