Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor component

1. A radiation-emitting semiconductor device comprising

a semiconductor body having an active region provided for generating radiation;

a carrier on which the semiconductor body is arranged; and

an optical element,

wherein the optical element is attached to the semiconductor body with a direct bonding connection,

wherein a mirror region is arranged between the active region and the optical element, and

wherein the mirror region is arranged between the direct bonding connection and the optical element.

2. The radiation-emitting semiconductor device according to claim 1 ,

wherein the carrier and the optical element terminate flush with a side surface delimiting the semiconductor device.

3. The radiation-emitting semiconductor device according to claim 1 ,

wherein the active region is divided into a plurality of segments and the optical element extends continuously over the plurality of segments.

4. The radiation-emitting semiconductor device according to claim 1 ,

wherein

a contact for external electrical contacting of the semiconductor device is arranged on a side of the semiconductor body facing the optical element;

the direct bonding connection is adjacent to an auxiliary bonding layer on a side facing the semiconductor body; and

the auxiliary bonding layer completely covers the contact and in places has a greater vertical extent than the contact.

5. The radiation-emitting semiconductor device according to claim 1 , wherein the radiation-emitting semiconductor device has two contacts for external electrical contacting on a side of the carrier facing away from the optical element.

6. A method for producing a plurality of radiation-emitting semiconductor devices, comprising the steps of:

a) providing a semiconductor layer sequence having an active region provided for generating radiation on a carrier and having a first interface, wherein a contact is arranged on the semiconductor layer sequence;

b) providing an optics carrier having a second interface;

c) producing a direct bonding connection between the first interface and the second interface; and

d) separating into the plurality of radiation-emitting semiconductor devices, wherein the radiation-emitting semiconductor devices each comprise a part of the carrier, the semiconductor layer sequence and the optics carrier, wherein the contact is covered by the optics carrier in step c) and is exposed after step c).

7. The method according to claim 6 ,

wherein in step d) the optics carrier and the carrier are severed.

8. The method according to claim 6 ,

wherein prior to step c), the first interface and/or the second interface are chemomechanically polished.

9. The method according to claim 6 ,

wherein the contact and an auxiliary bonding layer, which cover the contact, are arranged on the semiconductor layer sequence and the auxiliary bonding layer is chemomechanically polished prior to step c).

10. The method according to claim 6 ,

wherein a radiation exit surface of the optics carrier facing away from the carrier is formed after step c).

11. The method according to claim 6 ,

wherein the optics carrier comprises a plurality of optical elements prior to step c).

12. The method according to claim 6 ,

wherein a radiation-emitting semiconductor device is produced comprising a semiconductor body having an active region provided for generating radiation, a carrier on which the semiconductor body is arranged, and an optical element, wherein the optical element is attached to the semiconductor body with a direct bonding connection.

13. A radiation-emitting semiconductor device comprising

a semiconductor body having an active region provided for generating radiation;

a carrier on which the semiconductor body is arranged; and

an optical element, wherein

the optical element is attached to the semiconductor body with a direct bonding connection,

the optical element has a breakthrough, and

the breakthrough exposes a contact for an electrical contacting of the semiconductor body.