Optoelectronic device with an active element
An optoelectronic device is specified, with a radiation-emitting semiconductor chip configured to generate electromagnetic radiation, and an active element configured to change a physical state, wherein the active element is embedded in a component of the component, and the physical change of state comprises the following: temperature change, sound generation, mechanical motion.
1. Optoelectronic device, comprising:
a radiation-emitting semiconductor chip configured to generate electromagnetic radiation,
at least one active element configured to change a physical state, and
a carrier,
wherein:
the radiation-emitting semiconductor chip and the active element are arranged on the carrier,
the at least one active element is embedded in a reflector element, and the reflector element comprises a reflector wall, and wherein a respective top surface of the active element and the reflector element are coplanar,
the at least one active element is arranged spaced apart in lateral directions from the radiation-emitting semiconductor chip, and
the physical change of state comprises at least one of the following: temperature change, mechanical motion.
2. Optoelectronic device according to claim 1 with a sensor element configured to detect at least one of the following quantities:
temperature, pressure, sound, electromagnetic radiation, electrical capacitance.
3. Optoelectronic device according to claim 2 , in which the sensor element is embedded in a cover body of the device.
4. Optoelectronic device according to claim 1 , in which the physical change of state by the active element is haptically detectable.
5. Optoelectronic device according to claim 2 , in which the sensor element and at least one of the following elements are arranged spaced apart from one another in lateral directions: the radiation-emitting semiconductor chip, or the active element.
6. Optoelectronic device according to claim 1 , in which the at least one active element is further embedded in at least one of: a cover body or the carrier.
7. Optoelectronic device according to claim 1 , in which the active element and the radiation-emitting semiconductor chip are embedded in a cover body.
8. Optoelectronic device according to claim 6 , in which a sensor element is embedded in the cover body.
9. Optoelectronic device according to claim 6 , in which the cover body terminates flush with a sensor element and/or the active element in a vertical direction or the sensor element and/or the active element project beyond the cover body.
10. Optoelectronic device according to claim 1 , in which the active element is embedded in the reflector element which laterally surrounds the radiation-emitting semiconductor chip at least in places in lateral directions and which is configured to reflect electromagnetic radiation generated by the radiation-emitting semiconductor chip during operation.
11. Optoelectronic device according to claim 1 , in which a sensor element is embedded in the reflector element.
12. Optoelectronic device according to claim 1 , wherein at least one of the following elements is attached to the carrier and/or embedded in the carrier: the radiation-emitting semiconductor chip, the at least one active element, sensor element.
13. Optoelectronic device according to claim 12 , in which the carrier comprises an integrated circuit.
14. Optoelectronic device according to claim 13 , in which the integrated circuit electrically connects at least two of the following elements and/or controls at least one of the following elements: the radiation-emitting semiconductor chip, the at least one active element, the sensor element.
15. Display device with a plurality of optoelectronic devices according to claim 1 , which is configured to display images or video sequences.
16. Optoelectronic device, comprising:
a radiation-emitting semiconductor chip configured to generate electromagnetic radiation,
at least one active element configured to change a physical state, and
a carrier,
wherein:
the radiation-emitting semiconductor chip and the active element are arranged on the carrier,
the at least one active element is embedded in a reflector element, and the reflector element comprises a reflector wall, wherein the reflector wall is inclined away from the radiation-emitting semiconductor chip on a first side and is inclined towards the radiation-emitting semiconductor chip on an opposing second side,
the at least one active element is arranged spaced apart in lateral directions from the radiation-emitting semiconductor chip, and
the physical change of state comprises at least one of the following: temperature change, mechanical motion.
17. Optoelectronic device according to claim 16 , in which the optoelectronic device is a traffic light or a street lamp.