Metrology method and system
A metrology method for use in determining one or more parameters of a patterned structure, the method including providing raw measured TEM image data, TEM meas , data indicative of a TEM measurement mode, and predetermined simulated TEM image data including data indicative of one or more simulated TEM images of a structure similar to the patterned structure under measurements and a simulated weight map including weights assigned to different regions in the simulated TEM image corresponding to different features of the patterned structure, performing a fitting procedure between the raw measured TEM image data and the predetermined simulated TEM image data and determining one or more parameters of the structure from the simulated TEM image data corresponding to a best fit condition.
1. A control system for use in measuring one or more parameters of a patterned structure, the control system being configured as a computer system comprising:
an input utility configured to receive input data comprising raw measured TEM image data, TEM meas , data indicative of a TEM measurement mode; and
a data processor configured to process the raw measured TEM image data, TEM meas , and generate output data indicative of one or more parameters of a patterned structure, wherein said data processor comprises: an optimization module configured and operable to utilize said data indicative of the TEM measurement mode and perform a fitting procedure between the raw measured TEM image data, TEM meas , and predetermined simulated TEM image data, TEM simul , and determining one or more parameters of the structure from the simulated image data corresponding to a best fit condition, wherein said predetermined simulated TEM image data, TEM simul , being based on a parametrized three-dimensional model of features of the patterned structure, and comprising one or more simulated TEM images and a simulated weight map comprising weights assigned to different regions in the simulated TEM image corresponding to different features of the patterned structure.
2. A control system according to claim 1 , wherein said data processor further comprises a data simulator module, which is configured and operable to analyze data indicative of the parametrized three-dimensional model of features of the patterned structure and a map of said different features of the structure, and create said predetermined simulated TEM image data, TEM simul .
3. A control system according to claim 1 , wherein said data indicative of the parametrized three-dimensional model comprises any of a) geometrical features including dimensions of the features of the structure, and b) material related data of the structure.
4. A control system according to claim 1 , wherein said one or more parameters of the structure to be determined comprise dimensional parameters, comprising one or more of the following: Critical Dimensions (CD) of the pattern features, thickness of one or more layers in the structure, Side Wall Angle (SWA).
5. A control system according to claim 1 , wherein said data indicative of the one or more parameters of the TEM measurement mode comprises Lamellae geometry data including at least one of the following: Lamellae thickness, Lamellae orientation, Lamellae position with respect to the structure.
6. A control system according to claim 5 , wherein said data indicative of the one or more parameters of the TEM measurement mode further comprises data about a detection scheme corresponding to the measured TEM image data.
7. A control system according to claim 1 , wherein said optimization module is configured and operable to perform said fitting procedure while varying one or more of the following: one or more of the three-dimensional model parameters; one or more of material properties; and Lamellae position with respect to the three-dimensional model of the structure; and varying the weight map by dynamically assigning different weights to the different regions of the TEM image, depending on the Lamellae geometry and position relative to the different features of the patterned structure.
8. A control system according to claim 1 , further comprising a parameter calculator module configured and operable to provide, from the simulated TEM image data corresponding to the best fit condition, the one or more parameters of the patterned structure being measured.
9. A control system according to claim 8 , further comprising an analyzer, in data communication with the parameter calculator module, the analyzer being configured to use the one or more parameters of the patterned structure determined from the TEM image data to optimize measured data corresponding to measurements of a type different from TEM, obtained on the patterned structure.
10. A metrology method for use in determining one or more parameters of a patterned structure, the method comprising:
providing raw measured TEM image data, TEM meas , and data indicative of a TEM measurement mode, and predetermined simulated TEM image data comprising data indicative of one or more simulated TEM images of a structure similar to the patterned structure under measurements and simulated weight map comprising weights assigned to different regions in the simulated TEM image corresponding to different features of the patterned structure;
performing a fitting procedure between the raw measured TEM image data and said predetermined simulated TEM image data and determining one or more parameters of the structure from the simulated TEM image data corresponding to a best fit condition.
11. A metrology method according to claim 10 , further comprising: providing model data indicative of at least one three-dimensional model of a structure similar to the patterned structure under measurements, the three-dimensional model comprising a parametrized three-dimensional geometrical model of the structure; and analyzing said three-dimensional model and data indicative of a TEM measurement mode comprising at least Lamellae geometry data, and generating said one or more simulated TEM images.
12. A metrology method according to claim 11 , wherein said data indicative of the three-dimensional model comprises at least one of geometrical and material related parameters of the structure.
13. A metrology method according to claim 10 , wherein said providing of the predetermined simulated TEM image data comprises analyzing data indicative of a parametrized three-dimensional model of features of the patterned structure and a map of said different features of the structure, and creating said predetermined simulated TEM image data.
14. A metrology method according to claim 13 , wherein said creating of the simulated TEM image data comprises simulated TEM images for multiple different Lamellae positions and geometries with respect to the three-dimensional model of the patterned structure.
15. A metrology method according to claim 10 , wherein said data indicative of the one or more parameters of the TEM measurement mode comprises Lamellae geometry data including at least one of the following: Lamellae thickness, Lamellae orientation, Lamellae position with respect to the structure.
16. A metrology method according to claim 10 , wherein said data indicative of TEM measurement mode further comprises data about a detection scheme corresponding to the measured TEM image data.
17. A metrology method according to claim 10 , wherein said performing of the fitting procedure comprises varying one or more of the following: one or more of the three-dimensional model parameters; one or more of material properties; and Lamellae position with respect to the three-dimensional model of the structure; and varying the weight map by dynamically assigning different weights to the different regions of the TEM image, depending on the Lamellae geometry and position relative to the different features of the structure.
18. A metrology method according to claim 10 , further comprising using said one or more parameters of the structure to optimize data interpretation model for interpreting measured data of a type different from TEM.
19. A metrology method according to claim 10 , wherein said one or more parameters of the structure to be determined comprise dimensional parameters, comprising one or more of the following: Critical Dimensions (CD) of the pattern features, thickness of one or more layers in the structure, Side Wall Angle (SWA).