OXIDE OR NITRIDE OVERLAYER FOR USE ON A DIAMOND-LIKE CARBON FILM
Overlayers for coating diamond-like carbon (DLC) films are disclosed for use with DLC films employed on the sliders of hard disk drives, such as the sliders of heat assisted magnetic recording (HAMR) or energy assisted magnetic recording (EAMR) drives. In some illustrative examples, the overlayer is formed of an oxide, such as hafnium dioxide or tantalum pentoxide. A buffer layer formed, for example, of silicon nitride is interposed between the oxide overlayer and the DLC film. The oxide layer is provided to prevent oxidation of the DLC film during HAMR so as to maintain thermal stability of the DLC film and prevent a loss of optical transparency at the laser wavelengths of HAMR. The buffer layer is provided to prevent chemical mixing of the oxide overlayer and the DLC film. In other examples, an overlayer formed of silicon nitride is formed directly on the DLC film with no buffer layer.
1 . A structure for use in a disk drive, the structure comprising:
a substrate of a component of the disk drive;
a diamond-like carbon (DLC) film on the substrate;
a buffer layer on the DLC film; and
an oxide layer on the buffer layer.
2 . The structure of claim 1 , wherein the oxide layer comprises an oxide selected from a group consisting of hafnium dioxide, tantalum pentoxide, yttrium-doped zinc oxide (YZO), yttrium-stabilized zirconia (YSZ), zirconium oxide (ZrO x ), titanium oxide (TiO x ), and combinations thereof.
3 . The structure of claim 1 , wherein the oxide layer has a thickness of at least 1.5 nm.
4 . The structure of claim 1 , wherein the oxide layer is configured to reduce one or more of a temperature-based oxidation of the DLC film, a temperature-based loss of optical transparency in the DLC film, and a temperature-based loss of thermal stability of the DLC film as compared to a corresponding structure without the oxide layer.
5 . The structure of claim 1 , wherein the buffer layer comprises a compound selected from a group consisting of silicon nitride (S 3 N 4 ), titanium nitride (TiN x ), titanium oxynitride (TiN x O 1-x ), chromium nitride (CrN x ), chromium oxynitride (CrN x O 1-x ), nickel chromium (NiCr), silicon carbide (SiC), and combinations thereof.
6 . The structure of claim 1 , wherein the buffer layer has a thickness of at least 0.5 nanometers (nm).
7 . The structure of claim 1 , wherein the buffer layer is configured to reduce an amount of chemical mixing between the oxide layer and the DLC film as compared to a corresponding structure without the buffer layer.
8 . The structure of claim 1 , wherein the DLC film has a thickness of no more than 3.0 nanometers (nm).
9 . The structure of claim 1 , wherein the substrate comprises a metal alloy.
10 . The structure of claim 1 , wherein the component comprises a slider of the disk drive and the substrate comprises a portion of a slider.
11 . A disk drive comprising the structure of claim 10 .
12 . A method for forming a structure for use in a disk drive, the method comprising:
providing a component of the disk drive, where the component comprises a substrate;
forming a diamond-like carbon (DLC) film on the substrate;
forming a buffer layer on the DLC film; and
forming an oxide layer on the buffer layer.
13 . The method of claim 12 , wherein the oxide layer is formed using an oxide selected from a group consisting of hafnium dioxide, tantalum pentoxide, yttrium-doped zinc oxide (YZO), yttrium-stabilized zirconia (YSZ), zirconium oxide (ZrO x ), titanium oxide (TiO x ), and combinations thereof.
14 . The method of claim 12 , wherein the oxide layer is formed with a thickness of at least 1.5 nm.
15 . The method of claim 12 , wherein the buffer layer is formed using a compound selected from a group consisting of silicon nitride (S 3 N 4 ), titanium nitride (TiN x ), titanium oxynitride (TiN x O 1-x ), chromium nitride (CrN x ), chromium oxynitride (CrN x O 1-x ), nickel chromium (NiCr), silicon carbide (SiC), and combinations thereof.
16 . The method of claim 12 , wherein the buffer layer is formed with a thickness of at least 0.5 nanometers (nm).
17 . The method of claim 12 , wherein the DLC film is formed with a thickness of no more than 3.0 nanometers (nm).
18 . The method of claim 12 , wherein the substrate comprises a portion of a slider and wherein the DLC film is formed on the slider.
19 . The method of claim 12 , wherein the substrate comprises a portion of a slider having a waveguide and wherein the DLC film is formed over an end of the waveguide.
20 . A structure for use in a disk drive, the structure comprising:
a substrate of a component of the disk drive;
a diamond-like carbon (DLC) film on the substrate; and
a silicon nitride layer on the DLC film.
21 . The structure of claim 20 , wherein the silicon nitride layer has a thickness of at least 2.0 nanometers (nm).
22 . The structure of claim 20 , wherein the silicon nitride layer is configured to reduce one or more of a temperature-based oxidation of the DLC film, a loss of temperature-based optical transparency in the DLC film, and a loss of thermal stability of the DLC film as compared to a corresponding structure without the silicon nitride layer.
23 . The structure of claim 20 , wherein the DLC layer has a thickness of no more than 3.0 nanometers (nm).
24 . The structure of claim 20 , wherein the component comprises a slider of the disk drive and the substrate comprises a portion of a slider.
25 . A disk drive comprising the structure of claim 24 .
26 . A method for forming a structure for use in a disk drive, the method comprising:
providing a component of the disk drive, where the component comprises a substrate;
forming a diamond-like carbon (DLC) film on the substrate; and
forming a silicon nitride layer on the DLC film.
27 . The method of claim 26 , wherein the silicon nitride layer is formed with a thickness of at least 2.0 nanometers (nm).
28 . The method of claim 26 , wherein the DLC film is formed with a thickness of no more than 3.0 nanometers (nm).
29 . The method of claim 26 , wherein the substrate comprises a portion of a slider and wherein the DLC film is formed on the slider.
30 . The method of claim 26 , wherein the substrate comprises a portion of a slider having a waveguide and wherein the DLC film is formed over an end of the waveguide.