Suppressing parasitic sidebands in lateral bulk acoustic wave resonators
View Patent ↗Acoustic wave filter devices are disclosed. In an embodiment, the device includes an acoustic wave resonator and a reflecting layer located below the acoustic wave resonator. The wave resonator includes an input electrode including a first electrode and a counter electrode, a piezoelectric layer sandwiched between the first electrode and the counter electrode, and an output electrode. The piezoelectric layer has a first region covered by the first or the output electrode, and a second region not covered by any of the first and the output electrode. The first region has a second order acoustic thickness-shear resonance (TS2) mode dispersion curve with a first minimum frequency, and the second region has a TS2 mode dispersion curve with a second minimum frequency. The reflecting layer's thickness is such that a difference between the first minimum frequency and the second minimum frequency is less than 2% of a filter center frequency.
1. An acoustic wave filter device comprising:
an acoustic wave resonator that includes
an input port including a first electrode and a counter electrode,
a piezoelectric layer sandwiched between the first electrode and the counter electrode such that application of a radio frequency voltage between the first electrode and the counter electrode creates acoustic resonance waves in the piezoelectric layer, the acoustic resonance waves comprising acoustic thickness-extensional resonance modes and one or more acoustic thickness-shear resonance modes, and
an output port,
wherein the piezoelectric layer has a first region covered by the first electrode or by the output port, and a second region not covered by any of the first electrode and the output port, and
wherein the first region has a second order acoustic thickness-shear resonance (TS2) mode dispersion curve with a first minimum frequency (f m ), and the second region has a TS2 mode dispersion curve with a second minimum frequency (f f ); and
a reflecting structure located below the acoustic wave resonator and comprising at least a first reflecting layer,
wherein the first and the second minimum frequencies depend on a thickness of the first reflecting layer, wherein the thickness of the first reflecting layer is such that a difference between the first minimum frequency and the second minimum frequency is less than 2% of the first minimum frequency, the thickness being measured in a direction perpendicular to surface of the acoustic wave resonator.
2. The acoustic wave filter device of claim 1 , wherein the first reflecting layer is at least 40% thicker than a quarter of a longitudinal acoustic wavelength at a filter center frequency of the acoustic wave filter.
3. The acoustic wave filter device of claim 1 , wherein the TS2 propagates in the first and the second regions with lateral wavelengths of over 9 times a thickness of the piezoelectric layer.
4. The acoustic wave filter device of claim 1 , wherein the output port has an output electrode, and wherein each of the first electrode and the output electrode has a comb-shaped structure with a plurality of extensions, multiple extensions of the first electrode are interdigitated with multiple extensions of the output electrode.
5. The acoustic wave filter device of claim 4 , wherein each extension has a width smaller than a wavelength associated with the first minimum frequency, the width of an extension being perpendicular to a length of the extension on the piezoelectric layer.
6. The acoustic wave filter device of claim 4 , wherein the first electrode and the output electrode, in total, have 4 to 40 extensions.
7. The acoustic wave filter device of claim 1 , wherein the first reflecting layer of the reflecting structure is in direct contact with a bottom surface of the acoustic wave resonator.
8. The acoustic wave filter device of claim 1 , wherein the reflecting structure includes a Bragg reflector, the Bragg reflector comprising multiple layers with alternating high and low acoustic impedance materials, wherein a low acoustic impedance is lower than a high acoustic impedance.
9. The acoustic wave filter device of claim 8 , wherein the first reflecting layer is a topmost layer of the Bragg reflector.
10. The acoustic wave filter device of claim 1 , wherein the first reflecting layer comprises SiO2.
11. The acoustic wave filter device of claim 1 , wherein the first electrode has an integrated geometry with an output electrode of the output port.
12. The acoustic wave filter device of claim 1 , wherein the thickness of the first reflecting layer is between 1100 nm to 1400 nm.
13. The acoustic wave filter of claim 1 , wherein
the first electrode has a first comb-shaped structure with a plurality of input extensions, and the output port has an output electrode having a second comb-shaped structure with a plurality of output extensions, and
wherein the plurality of input extensions and the plurality of output extensions form a pattern that is periodically repeated on a top surface of the piezoelectric layer, a period of the pattern including a first number of input extensions immediately followed by a second number of output extensions, wherein at least one of the first and the second numbers is greater than 1.
14. The acoustic wave filter device of claim 13 , wherein the second number is 2.
15. The acoustic wave filter device of claim 14 , wherein the first number is 1.
16. The acoustic wave filter device of claim 13 , wherein the input extensions and the output extensions are formed as an array of parallel extensions.
17. The acoustic wave filter device of claim 13 , further comprising a Bragg reflector located below the counter electrode.
18. The acoustic wave filter device of claim 13 , wherein the input and the output electrodes, in total, have 4 to 40 extensions.