PLASMA ASHING OF COATED SUBSTRATES
A system for plasma etching or ashing a coating on a substrate includes a plasma chamber, a second electrode, a plasma source coupled to the plasma chamber, a substrate including a coating, and a plasma mask including at least one aperture. The plasma chamber includes a first electrode. The plasma mask is configured to cover the substrate while exposing selected surfaces of the substrate and coating through the at least one aperture. The first electrode and the second electrode are configured to initiate and maintain a plasma within the plasma chamber. The plasma source includes a gas.
1 . A system for plasma etching/ashing a coating on a substrate, the system comprising:
a plasma chamber comprising a first electrode;
a second electrode, wherein the first electrode and the second electrode are configured to initiate and maintain a plasma within the plasma chamber;
a plasma source coupled to the plasma chamber, the plasma source comprising a gas;
a substrate comprising a coating; and
a plasma mask comprising at least one aperture, the plasma mask configured to cover the substrate while exposing selected surfaces of the substrate and coating through the at least one aperture.
2 . The system of claim 1 , wherein the coating is a parylene coating and wherein the system further comprises a power source coupled to the first and second electrodes.
3 . The system of claim 1 , further comprising a cooling mechanism coupled to the plasma chamber.
4 . The system of claim 1 , wherein the plasma mask comprises a thermal interface material.
5 . The system of claim 1 , wherein the plasma mask comprises a bevel at the at least one aperture.
6 . The system of claim 1 , wherein the plasma mask is mechanically coupled to the substrate.
7 . The system of claim 1 , wherein at least one of the first electrode and the second electrode comprises at least one cooling channel.
8 . The system of claim 1 , wherein at least one of the first electrode and the second electrode comprises a plurality of cooling channels.
9 . The system of claim 1 , wherein the plasma mask is either the first electrode or the second electrode.
10 . The system of claim 1 , wherein the plasma is initiated and maintained between bi-polar electrodes.
11 . The system of claim 1 , wherein the plasma is initiated and maintained between tri-polar electrodes.
12 . The system of claim 1 , wherein the plasma mask comprises cooling channels.
13 . The system of claim 1 , wherein the plasma chamber further comprises a vacuum.
14 . The system of claim 1 , wherein walls of the plasma chamber are the second electrode.
15 . The system of claim 1 , wherein a tray holding the substrate is the first electrode.
16 . The system of claim 1 , wherein the at least one aperture has a different aspect ratio than a corresponding component on the substrate.
17 . A system for plasma etching/ashing a coating on a substrate, the system comprising:
a plasma chamber comprising a first electrode, the plasma chamber further comprising a vacuum;
a second electrode, wherein the first electrode and the second electrode are configured to initiate and maintain a plasma within the plasma chamber;
a plasma source coupled to the plasma chamber, the plasma source comprising a gas;
a substrate comprising a coating, wherein the coating is a parylene; and
a plasma mask comprising at least one aperture, the plasma mask configured to cover the substrate while exposing selected surfaces of the substrate through the at least one aperture, wherein the plasma mask comprises an interface material, wherein the plasma mask is mechanically coupled to the substrate.
18 . A method comprising:
providing at least one substrate in a plasma chamber, the substrate including a coating;
coupling a plasma mask to the substrate, the plasma mask comprising at least one aperture;
generating a plasma within the plasma chamber between a first electrode and a second electrode; and
etching or ashing the coating at the at least one aperture with the generated plasma.
19 . The method of claim 18 , further comprising cycling between the etching or ashing and a cooling cycle.
20 . The method of claim 18 , wherein walls of the plasma chamber are the second electrode.