IP Library Granted Patent US 10,921,629
Granted Patent B1
US 10,921,629 · App. 16/667,275 · Granted Feb 16, 2021

Methods and apparatus for increased sensitivity of a capacitive sensor

Inventors: Takayasu Otagaki (Ota, JP); Kazuyoshi Ishikawa (Kumagaya, JP)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
G02F1/13338G02F1/134363G02F1/136286
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,921,629
App. No.
16/667,275
Granted
Feb 16, 2021
Kind
B1
Abstract

Various embodiments of the present technology may comprise methods and apparatus for increased sensitivity of a capacitive proximity sensor. The method and apparatus may comprise a sense electrode and a drive electrode configured to create at least one inflection point corresponding to an increase or decrease in rate of change of capacitance within one or more sensing regions of the electrical field of the capacitive sensor. In alternative embodiments, the sense electrode may be configured to create multiple zones that may be used to indicate a desired signal such an upcoming replacement period and a replace now period.

Claims (49)

1. A capacitance sensor for detecting and identifying a replacement period for a roll of paper, comprising:

a drive electrode;

a sense electrode at least partially enclosed by the drive electrode to define a sensing field responsive to the presence of the roll of paper, wherein the sensing field comprises:

a first sensing region having a first rate of capacitance change relative to a position of an outermost edge of the roll of paper; and

a second sensing region having a second rate of capacitance change relative to the position of the outermost edge of the roll of paper, and wherein an inflection point is created in the sensing field where the first and second sensing regions meet; and

a dielectric disposed between and separating the drive electrode from the sense electrode.

2. A capacitance sensor according to claim 1 , wherein the second rate of capacitance change is greater than the first rate of capacitance change.

3. A capacitance sensor according to claim 1 , further comprising a third sensing region having a third rate of capacitance change relative to the position of the outermost edge of the roll of paper, and wherein a second inflection point is created in the sensing field where the second and third sensing regions meet.

4. A capacitance sensor according to claim 3 , wherein the third rate of capacitance change is less than the second rate of capacitance change.

5. A capacitance sensor according to claim 1 , wherein the sense electrode further comprises:

an upper portion comprising a shape corresponding to the first sensing region; and

a middle portion comprising a second shape corresponding to the second sensing region.

6. A capacitance sensor according to claim 5 , wherein the sense electrode further comprises:

a third sensing region having a third rate of capacitance change relative to the position of the outermost edge of the roll of paper, and wherein a second inflection point is created in the sensing field where the second and third sensing regions meet; and

a lower portion comprising a third shape corresponding to the third sensing region.

7. A capacitance sensor according to claim 5 , wherein:

an outer edge of the middle portion of the sense electrode facing the dielectric is rounded; and

an inner edge of the drive electrode opposite the outer edge of the middle portion is rounded to at least partially conform to the outer edge of the middle portion.

8. A capacitance sensor according to claim 1 , wherein the sense electrode is fully enclosed by the drive electrode.

9. A capacitance sensor according to claim 1 , wherein:

an outer edge portion of the sense electrode facing the dielectric is rounded; and

an inner edge of the drive electrode opposite the outer edge portion of the sense electrode is rounded to at least partially conform to the outer edge portion of the sense electrode.

10. A capacitance sensor according to claim 1 , wherein the drive and sense electrodes form an L-shape.

11. A capacitance sensor for detecting and identifying a replacement period for an object, comprising:

a drive electrode; and

a sense electrode at least partially enclosed by the drive electrode to define a sensing field responsive to the object, wherein the sense electrode comprises:

a first sensing region having a first rate of capacitance change relative to a change of position of the object within the sensing field; and

a second sensing region having a second rate of capacitance change relative to the change of position of the object within the sensing field, and wherein an inflection point is created in the sensing field where the first and second sensing regions meet.

12. A capacitance sensor according to claim 11 , further comprising a third sensing region having a third rate of capacitance change relative to the change of position of the object within the sensing field, and wherein a second inflection point is created in the sensing field where the second and third sensing regions meet.

13. A capacitance sensor according to claim 11 , wherein the sense electrode further comprises:

an upper portion comprising a shape corresponding to the first sensing region; and

a middle portion comprising a second shape corresponding to the second sensing region.

14. A capacitance sensor according to claim 13 , wherein the sense electrode further comprises:

a third sensing region having a third rate of capacitance change relative to the change of position of the object within the sensing field, and wherein a second inflection point is created in the sensing field where the second and third sensing regions meet; and

a lower portion comprising a third shape corresponding to the third sensing region.

15. A capacitance sensor according to claim 14 , wherein the third rate of capacitance change is less than the second rate of capacitance change.

16. A capacitance sensor according to claim 11 , wherein the second rate of capacitance change is greater than the first rate of capacitance change.

17. A method of using a capacitance sensor to detect and identify a replacement period for an object, comprising:

positioning a sensing element having a sense electrode at least partially enclosed by a drive electrode proximate the object, wherein the sensing element generates a sensing field and the object is positioned within the sensing field;

detecting a first rate of change of capacitance with a first sensing region of the sensing element, wherein a change of capacitance is caused by a change in position of the object within the sensing field;

detecting a second rate of change of capacitance with a second sensing region of the sensing element;

identifying an inflection point between the first and second sensing regions; and

using the inflection point to differentiate between an abundant period of life for the object and a replacement period for the object.

18. A method of using a capacitance sensor according to claim 17 , further comprising:

detecting a third rate of change of capacitance with a third sensing region of the sensing element;

identifying a second inflection point between the second and third sensing regions; and

using the second inflection point to identify the replacement period for the object.

19. A method of using a capacitance sensor according to claim 18 , wherein the third rate of capacitance change is less than the second rate of capacitance change.

20. A method of using a capacitance sensor according to claim 17 , wherein the second rate of capacitance change is greater than the first rate of capacitance change.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 054090, FRAME 0617 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064081/0167 →
SECURITY INTEREST Recorded Oct 16, 2020
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION; ON SEMICONDUCTOR CONNECTIVITY SOLUTIONS, INC.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 054090/0617 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 29, 2019
From: OTAGAKI, TAKAYASU; ISHIKAWA, KAZUYOSHI
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 050864/0783 →
Continuity (1)
Provisional Application 62890196 · Aug 22, 2019