Architecture for monolithic 3D integration of semiconductor devices

1. A three-dimensional (3D) integrated circuit (IC) comprising:

a substrate having a substrate surface;

a power rail provided in the substrate;

a first tier of semiconductor devices provided in the substrate and positioned over the power rail along a thickness direction of the substrate which is substantially perpendicular to said substrate surface;

a wiring tier provided in the substrate and positioned over the first tier of semiconductor devices along the thickness direction, said wiring tier including at least one wiring level comprising a plurality of independent wiring tracks each extending in a direction along the substrate surface;

a second tier of semiconductor devices provided in the substrate and positioned over the wiring tier along the thickness direction, the second tier of semiconductor devices being stacked on the first tier of semiconductor devices in the thickness direction such that the wiring tier is interposed between the first and second tiers of semiconductor devices;

a first vertical interconnect structure extending downward from a first track of the plurality of independent wiring tracks and into the first tier of semiconductor devices along the thickness direction to electrically connect the first track to a device within the first tier of semiconductor devices; and

a second vertical interconnect structure extending upward from a second track of the plurality of independent wiring tracks and into the second tier of semiconductor devices along the thickness direction to electrically connect the second track to a device within the second tier of semiconductor devices.

2. The 3D IC of claim 1 wherein said wiring tier comprises a plurality of wiring levels positioned over one another along the thickness direction of the substrate, said plurality of wiring levels including the at least one wiring level.

3. The 3D IC of claim 1 , further comprising an intermediate power rail provided in the substrate and positioned over the power rail along the thickness direction of the substrate.

4. The 3D IC of claim 1 , further comprising a third tier of semiconductor devices provided in the substrate and stacked on the second tier of semiconductor devices in the thickness direction.

5. The 3D IC of claim 4 , further comprising an intermediate power rail provided in the substrate and positioned over the second tier of semiconductor devices such that the intermediate power rail is positioned between the second and third tiers of semiconductor devices along the thickness direction.

6. The 3D IC of claim 5 , further comprising:

a first power connection structure extending upward from the power rail to the first tier of semiconductor devices along the thickness direction to electrically connect the power rail to the device within the first tier of semiconductor devices,

a second power connection structure extending downward from the intermediate power rail to the second tier of semiconductor devices along the thickness direction to electrically connect the intermediate power rail to the device within the second tier of semiconductor devices, and

a third power connection structure extending upward from the intermediate power rail to the third tier of semiconductor devices along the thickness direction to electrically connect the intermediate power rail to a device within the third tier of semiconductor devices.

7. The 3D IC of claim 4 , wherein:

the first tier of semiconductor devices comprises a first stacked pair of complementary field effect transistors sharing a common gate structure,

the second tier of semiconductor devices comprises a second stacked pair of complementary field effect transistors sharing a common gate structure,

the third tier of semiconductor devices comprises:

a third stacked pair of complementary field effect transistors sharing a common gate structure, and

an additional transistor stacked over the third stacked pair of complementary field effect transistors; and

the first second and third stacked pairs of complementary field effect transistors are stacked in relation to one another.

8. The 3D IC of claim 7 , wherein:

the first stacked pair of complementary field effect transistors has an n-over-p orientation,

the second stacked pair of complementary field effect transistors has a p-over-n orientation, and

the third stacked pair of complementary field effect transistors has an n-over-p orientation.

9. The 3D IC of claim 8 , wherein the third tier of semiconductor devices further comprises an n-type field effect transistor stacked on the third stacked pair of complementary field effect transistors.

10. The 3D IC of claim 9 , wherein:

the first tier of semiconductor devices comprises a first logic circuit,

the second tier of semiconductor devices comprises a second logic circuit, and

the third tier of semiconductor devices comprises a memory circuit.

11. The 3D IC of claim 10 , wherein:

the first logic circuit is an And-Or-Inverter (AOI) circuit,

the second logic circuit is an Exclusive-Or (XOR) circuit, and

the memory circuit is an SRAM circuit.

12. A three-dimensional (3D) integrated circuit (IC) comprising:

a substrate having a substrate surface;

a power rail provided in the substrate;

a first tier of semiconductor devices provided in the substrate and positioned over the power rail along a thickness direction of the substrate which is substantially perpendicular to said substrate surface;

a wiring tier provided in the substrate and positioned over the first tier of semiconductor devices along the thickness direction;

a second tier of semiconductor devices provided in the substrate and positioned over the wiring tier along the thickness direction, the second tier of semiconductor devices being stacked on the first tier of semiconductor devices in the thickness direction such that the wiring tier is interposed between the first and second tiers of semiconductor devices;

a first vertical interconnect structure extending downward from the wiring tier to the first tier of semiconductor devices along the thickness direction to electrically connect the wiring tier to a device within the first tier of semiconductor devices; and

a second vertical interconnect structure extending upward from the wiring tier to the second tier of semiconductor devices along the thickness direction to electrically connect the wiring tier to a device within the second tier of semiconductor devices wherein:

said first tier of semiconductor devices comprises a first transistor pair including an n-type transistor and a p-type transistor that are stacked over one another, and

said second tier of semiconductor devices comprises a second transistor pair including an n-type transistor and a p-type transistor that are stacked over one another.

13. The 3D IC of claim 12 , wherein the first transistor pair and the second transistor pair are configured in an alternating stack orientation.

14. The 3D IC of claim 12 wherein:

said first transistor pair further comprises a first common gate structure, and

said second transistor pair further comprises a second common gate structure.

15. A three-dimensional (3D) integrated circuit (IC) comprising:

a substrate having a substrate surface;

a power rail provided in the substrate;

a first tier of semiconductor devices provided in the substrate and positioned over the power rail along a thickness direction of the substrate which is substantially perpendicular to said substrate surface;

a wiring tier provided in the substrate and positioned over the first tier of semiconductor devices along the thickness direction;

a second tier of semiconductor devices provided in the substrate and positioned over the wiring tier along the thickness direction, the second tier of semiconductor devices being stacked on the first tier of semiconductor devices in the thickness direction such that the wiring tier is interposed between the first and second tiers of semiconductor devices;

a first vertical interconnect structure extending downward from the wiring tier to the first tier of semiconductor devices along the thickness direction to electrically connect the wiring tier to a device within the first tier of semiconductor devices; and

a second vertical interconnect structure extending upward from the wiring tier to the second tier of semiconductor devices along the thickness direction to electrically connect the wiring tier to a device within the second tier of semiconductor devices, wherein:

devices in each of the first and second tier of semiconductor devices are stacked collinearly along the thickness direction to define an active device column, and

said first and second vertical interconnects are provided outside of said active device column.

16. The 3D IC of claim 15 , wherein:

said active device column extends along the substrate surface of the substrate to define an active device region of the substrate surface, and

said wiring tier comprises a plurality of wiring tracks that substantially surround the active device region of the substrate surface.

17. The 3D IC of claim 16 wherein the plurality of wiring tracks comprise first wiring tracks provided within source-drain regions of the active device region and which extend along the substrate surface in substantially parallel relation to gate regions of the active device region.

18. The 3D IC of claim 17 wherein the plurality of wiring tracks further comprise second wiring tracks which extend along the substrate surface in substantially perpendicular relation to the gate regions of the active device region.