IP Library Granted Patent US 10,961,785
Granted Patent B2
US 10,961,785 · App. 16/667,597 · Granted Mar 30, 2021

Polycrystalline diamond compact

Inventors: Kenneth E. Bertagnolli (Riverton, UT); David P. Miess (Highland, UT); Jiang Qian (Cedar Hills, UT); Jason K. Wiggins (Draper, UT); Michael A. Vail (Genola, UT); Debkumar Mukhopadhyay (Sandy, UT)
Assignee: US SYNTHETIC CORPORATION
E21B10/567B22F7/08C22C26/00E21B10/36E21B10/46E21B10/55E21B10/5735B22F2998/00B24D18/00F16C17/04F16C17/102F16C33/043F16C33/26F16C2352/00Y10T428/24612Y10T428/24996Y10T428/249967
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Quick Facts
Patent No.
US 10,961,785
App. No.
16/667,597
Granted
Mar 30, 2021
Kind
B2
Abstract

In an embodiment, a method of fabricating a polycrystalline diamond compact is disclosed. The method includes sintering a plurality of diamond particles in the presence of a metal-solvent catalyst to form a polycrystalline diamond body; leaching the polycrystalline diamond body to at least partially remove the metal-solvent catalyst therefrom, thereby forming an at least partially leached polycrystalline diamond body; and subjecting an assembly of the at least partially leached polycrystalline diamond body and a cemented carbide substrate to a high-pressure/high-temperature process at a pressure to infiltrate the at least partially leached polycrystalline diamond body with an infiltrant. The pressure of the high-pressure/high-temperature process is less than that employed in the act of sintering of the plurality of diamond particles.

Claims (47)

1. A polycrystalline diamond compact, comprising:

a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including:

a plurality of diamond grains bonded together via diamond-to-diamond bonding to define a plurality of interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 10 μm to about 50 μm;

a catalyst occupying at least a portion of the plurality of interstitial regions; and

a coercivity greater than about 115 Oe to about 250 Oe.

2. The polycrystalline diamond compact of claim 1 , wherein the average grain size of the plurality of diamond grains is about 10 μm to about 30 μm.

3. The polycrystalline diamond compact of claim 2 , wherein the average grain size of the plurality of diamond grains is about 10 μm to about 18 μm.

4. The polycrystalline diamond compact of claim 1 , wherein the coercivity of the unleached portion of the polycrystalline diamond table is about 115 Oe to about 175 Oe.

5. The polycrystalline diamond compact of claim 1 , wherein the polycrystalline diamond table exhibits one or more characteristics of being sintered at a cell pressure of about 7.5 GPa to about 15 GPa.

6. The polycrystalline diamond compact of claim 1 , wherein the unleached portion of the polycrystalline diamond table exhibits a specific magnetic saturation of greater than 0 G·cm 3 /g to about 15 G·cm 3 /g.

7. The polycrystalline diamond compact of claim 6 , wherein the specific magnetic saturation of the unleached portion of the polycrystalline diamond table is about 10 G·cm 3 /g to about 15 G·cm 3 /g.

8. The polycrystalline diamond compact of claim 7 , wherein the unleached portion of the polycrystalline diamond table exhibits a specific permeability of less than about 0.10 G·cm 3 /g·Oe.

9. The polycrystalline diamond compact of claim 8 , wherein the specific permeability of the unleached portion of the polycrystalline diamond table is about 0.6 G·cm 3 /g·Oe to about 0.9 G·cm 3 /g·Oe.

10. The polycrystalline diamond compact of claim 8 , wherein the unleached portion of the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 .

11. The polycrystalline diamond compact of claim 10 , wherein the G ratio , of the unleached portion of the polycrystalline diamond table is about 5.0×10 6 to about 15.0×10 6 .

12. The polycrystalline diamond compact of claim 8 , wherein the polycrystalline diamond table exhibits a thermal stability, as determined by a distance cut, prior to failure, in a vertical lathe test of about 1300 m to about 3950 m.

13. A rotary drill bit, comprising:

a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and

a plurality of cutting elements mounted to the bit body, at least one of the plurality of cutting elements including the polycrystalline diamond compact according to claim 1 .

14. The polycrystalline diamond compact of claim 1 , wherein at least the unleached portion of the polycrystalline diamond table includes a catalyst content of the catalyst of about 1 weight % to about 7.5 weight %.

15. A polycrystalline diamond compact, comprising:

a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including:

a plurality of diamond grains bonded together via diamond-to-diamond bonding to define interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 10 μm to about 30 μm;

a catalyst including cobalt, the catalyst occupying at least a portion of the interstitial regions;

a coercivity of about 115 Oe to about 250 Oe; and

a specific magnetic saturation of about 5 G·cm 3 /g to about 15 G·cm 3 /g or less; and

a substrate bonded to the polycrystalline diamond table along an interfacial surface.

16. The polycrystalline diamond table of claim 15 , wherein the unleached portion of the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 .

17. A rotary drill bit, comprising:

a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and

a plurality of cutting elements mounted to the bit body, at least one of the plurality of cutting elements including the polycrystalline diamond compact according to claim 15 .

18. The polycrystalline diamond compact of claim 15 , wherein at least the unleached portion of the polycrystalline diamond table includes a catalyst content of the catalyst of about 1 weight % to about 7.5 weight %.

19. A polycrystalline diamond compact, comprising:

a polycrystalline diamond table sintered exhibiting one or more characteristics of being sintered at a cell pressure of at least about 7.5 GPa, at least an unleached portion of the polycrystalline diamond table including:

a plurality of diamond grains bonded together via diamond-to-diamond bonding to define interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 10 μm to about 18 μm;

a catalyst including cobalt, the catalyst occupying at least a portion of the interstitial regions;

a coercivity of about 115 Oe to about 175 Oe;

a specific magnetic saturation of about 10 G·cm 3 /g to about 15 G·cm 3 /g; and

a specific permeability of less than about 0.10 G·cm 3 /g·Oe; and

a substrate bonded to the polycrystalline diamond table along an interfacial surface.

20. The polycrystalline diamond table of claim 19 , wherein the unleached portion of the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 .

21. The polycrystalline diamond compact of claim 19 , wherein the specific permeability of the unleached portion of the polycrystalline diamond table is about 0.6 G·cm 3 /g·Oe to about 0.9 G·cm 3 /g·Oe.

22. The polycrystalline diamond compact of claim 19 , wherein the polycrystalline diamond table exhibits a thermal stability, as determined by a distance cut, prior to failure, in a vertical lathe test of at least about 1300 m.

23. A rotary drill bit, comprising:

a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and

a plurality of cutting elements mounted to the bit body, at least one of the plurality of cutting elements including the polycrystalline diamond compact according to claim 19 .

24. The polycrystalline diamond compact of claim 19 , wherein at least the unleached portion of the polycrystalline diamond table includes a catalyst content of the catalyst of about 3 weight % to about 7.5 weight %.

Assignments (5)
SECURITY INTEREST Recorded Jul 18, 2025
From: US SYNTHETIC CORPORATION
To: KEYBANK NATIONAL ASSOCIATION
Reel/Frame 074973/0089 →
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Jul 17, 2025
From: JPMORGAN CHASE BANK, N.A.
To: CHAMPIONX LLC; APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORP; HARBISON-FISCHER, INC.; NORRIS RODS, INC.,; NORRIS RODS, INC.,; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; US SYNTHETIC CORPORATION
Reel/Frame 072004/0019 →
RELEASE OF SECURITY INTEREST Recorded Jun 7, 2022
From: BANK OF AMERICA, N.A.
To: ACE DOWNHOLE, LLC; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; APERGY BMCS ACQUISITION CORP.; NORRISEAL-WELLMARK, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
Reel/Frame 060305/0001 →
SECURITY INTEREST Recorded Apr 30, 2021
From: APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORPORATION; CHAMPIONX USA INC.; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 056106/0007 →
SECURITY INTEREST Recorded Jun 5, 2020
From: ACE DOWNHOLE, LLC; APERGY BMCS ACQUISITION CORP.; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 053790/0001 →