Semiconductor device package assemblies and methods of manufacture

1. A semiconductor device package comprising:

a die attach paddle having a first surface and a second surface that is opposite the first surface;

a semiconductor die coupled with the first surface of the die attach paddle; and

a direct-bonded-metal (DBM) substrate including:

a ceramic layer having a first surface and a second surface that is opposite the first surface;

a first metal layer disposed on the first surface of the ceramic layer and coupled with the second surface of the die attach paddle; and

a second metal layer disposed on the second surface of the ceramic layer and exposed external to the semiconductor device package, the second metal layer being electrically isolated from the first metal layer by the ceramic layer,

the die attach paddle including a protrusion extending around at least a portion of a perimeter of the die attach paddle, such that a step of the die attach paddle is defined between the protrusion and the DBM substrate, the protrusion being proximate the second surface of the die attach paddle, the protrusion having a thickness that is less than a thickness of the die attach paddle between the first surface of the die attach paddle and the second surface of the die attach paddle.

2. The semiconductor device package of claim 1 , further comprising:

at least one signal lead; and

a wire bond electrically coupling a signal lead of the at least one signal lead with the semiconductor die.

3. The semiconductor device package of claim 2 , further comprising a molding compound, the molding compound:

encapsulating the die attach paddle, the semiconductor die and the wire bond; and

partially encapsulating the DBM substrate and the signal lead,

the second metal layer being exposed through the molding compound,

a first portion of the signal lead being disposed within the molding compound, and

a second portion of the signal lead being disposed outside the molding compound.

4. The semiconductor device package of claim 1 , wherein:

the DBM substrate is a direct-bonded-copper (DBC) substrate;

the first metal layer is a first copper layer; and

the second metal layer is second copper layer.

5. The semiconductor device package of claim 1 , wherein the first metal layer is coupled with the second surface of the die attach paddle using a solder material.

6. The semiconductor device package of claim 1 , wherein the ceramic layer includes at least one of aluminum oxide (Al 2 O 3 ), aluminum nitride (AIN), or silicon nitride (SiN).

7. The semiconductor device package of claim 1 , wherein the die attach paddle has a thickness of greater than or equal to 0.5 millimeters, the thickness being along a line extending orthogonally from the first surface of the die attach paddle to the second surface of the die attach paddle.

8. The semiconductor device package of claim 1 , wherein the first metal layer and the second metal layer are disposed over at least 90 percent of the first surface of the ceramic layer and at least 90 percent of the second surface of the ceramic layer, respectively.

9. The semiconductor device package of claim 1 , further comprising a molding compound encapsulating the die attach paddle and the semiconductor die, the protrusion having at least one surface in contact with the molding compound.

10. The semiconductor device package of claim 1 , further comprising a heatsink, the heatsink being directly coupled to the second metal layer using one of a solder material or a sinter material.

11. A semiconductor device package comprising:

a die attach paddle having a first surface and a second surface that is opposite the first surface;

a semiconductor die coupled with the first surface of the die attach paddle;

a plurality of signal leads;

at least one wire bond electrically coupling a signal lead of the plurality of signal leads with the semiconductor die; and

a direct-bonded-copper (DBC) substrate including:

a ceramic layer having a first surface and a second surface that is opposite the first surface;

a first copper layer disposed on the first surface of the ceramic layer and coupled with the second surface of the die attach paddle; and

a second copper layer disposed on the second surface of the ceramic layer and exposed external to the semiconductor device package, the second copper layer being electrically isolated from the first copper layer by the ceramic layer; and

a molding compound, the molding compound:

encapsulating the die attach paddle, the semiconductor die and the at least one wire bond; and

partially encapsulating the DBC substrate and the plurality of signal leads,

the second copper layer being exposed through the molding compound,

respective first portions of each of the plurality of signal leads being disposed within the molding compound, and

respective second portions of each of the plurality of signal leads being disposed outside the molding compound,

the die attach paddle including a protrusion extending around at least a portion of a perimeter of the die attach paddle, such that a step of the die attach paddle is defined between the protrusion and the DBC substrate, the protrusion being proximate the second surface of the die attach paddle, the protrusion having a thickness that is less than a thickness of the die attach paddle between the first surface of the die attach paddle and the second surface of the die attach paddle, and

the protrusion having at least one surface in contact with the molding compound.

12. The semiconductor device package of claim 11 , wherein the die attach paddle has a thickness of greater than or equal to 0.5 millimeters, the thickness being along a line extending orthogonally from the first surface of the die attach paddle to the second surface of the die attach paddle.

13. The semiconductor device package of claim 11 , wherein the first copper layer and the second copper layer are disposed over at least 90 percent of the first surface of the ceramic layer and at least 90 percent of the second surface of the ceramic layer, respectively.

14. The semiconductor device package of claim 11 , further comprising a heatsink, the heatsink being directly coupled to the second copper layer using one of a soldering material or a sintering material.

15. A method for producing a semiconductor device package, the method comprising:

coupling a semiconductor die with a first surface of a die attach paddle; and

coupling a direct-bonded-metal (DBM) substrate with a second surface of the die attach paddle, the second surface being opposite the first surface, the die attach paddle including a protrusion extending around at least a portion of a perimeter of the die attach paddle, such that a step of the die attach paddle is defined between the protrusion and the DBM substrate, the protrusion being proximate the second surface of the die attach paddle, the protrusion having a thickness that is less than a thickness of the die attach paddle between the first surface of the die attach paddle and the second surface of the die attach paddle,

the DBM substrate including:

a ceramic layer having a first surface and a second surface that is opposite the first surface;

a first metal layer disposed on the first surface of the ceramic layer, the first metal layer being coupled with the second surface of the die attach paddle; and

a second metal layer disposed on the second surface of the ceramic layer, the second metal layer being electrically isolated from the first metal layer by the ceramic layer.

16. The method of claim 15 , wherein coupling the DBM substrate with the second surface of the die attach paddle include soldering the first metal layer of the DBM substrate to the second surface of the die attach paddle.

17. The method of claim 15 , further comprising forming a wire bond to electrically connect a signal lead of the semiconductor device package to the semiconductor die.

18. The method of claim 17 , further comprising performing a molding operation to:

encapsulate the die attach paddle, the semiconductor die and the wire bond in a molding compound, such that the protrusion has at least one surface in contact with the molding compound; and

partially encapsulate the DBM substrate and the signal lead in the molding compound, the second metal layer being exposed through the molding compound, a first portion of the signal lead being disposed within the molding compound, and a second portion of the signal lead being disposed outside the molding compound.

19. The method of claim 18 , further comprising coupling a heatsink directly to the second metal layer using one of a solder material or a sinter material.