Nitride light emitter
A nitride light emitter includes: a nitride semiconductor light-emitting element including an Al x Ga 1-x N substrate (0≤x≤1) and a multilayer structure above the Al x Ga 1-x N substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the Al x Ga 1-x N substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the Al x Ga 1-x N substrate.
1. A nitride light emitter, comprising:
a nitride semiconductor light-emitting element including an Al x Ga 1-x N substrate, where x ranges from 0 to 1, inclusive, and a multilayer structure disposed above the AlxGa1−xN substrate, the multilayer structure including a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked in stated order from the Al x Ga 1-x N substrate; and
a submount substrate on which the nitride semiconductor light-emitting element is mounted, wherein:
the nitride semiconductor light-emitting element is mounted on the submount substrate such that the multilayer structure and submount substrate are opposed to each other,
the submount substrate comprises diamond,
the nitride semiconductor light-emitting element includes a cavity and a current non-injection region in a vicinity of an end face of the cavity,
in a stacked structure consisting of the first clad layer and the layers that are stacked on the first clad layer in a direction from the first clad layer toward the second clad layer, a mean strain of the stacked structure with respect to the Al x Ga 1-x N substrate is compressive,
the mean strain of the stacked structure is a value obtained by dividing, by a thickness of the stacked structure, a total value resulting from adding, for all of the layers stacked in the stacked structure, a value obtained by multiplying a mean strain of each of the layers stacked in the stacked structure with a thickness of each of the layers, and
the nitride semiconductor light-emitting element has a concave warp on a surface closer to the Al x Ga 1-x N substrate.
2. The nitride light emitter according to claim 1 , wherein the Al x Ga 1-x N substrate is a GaN substrate.
3. The nitride light emitter according to claim 2 , wherein the GaN substrate has a plane orientation that is non-polar or semi-polar, and
the multilayer structure contains an Al composition of at most 1%.
4. The nitride light emitter according to claim 3 , wherein the multilayer structure does not include Al.
5. The nitride light emitter according to claim 1 , wherein at least one of the first light guide layer or the second light guide layer contains In.
6. The nitride light emitter according to claim 5 , wherein the first light guide layer and the second light guide layer each include an In composition of 6% or less.
7. The nitride light emitter according to claim 5 , wherein
the quantum-well active layer includes a quantum well layer and a barrier layer, and
the barrier layer contains an In composition that is equal to or higher than an In composition of each of the first light guide layer and the second light guide layer.
8. The nitride light emitter according to claim 1 , further comprising
a buffer layer between the Al x Ga 1-x N substrate and the first clad layer, the buffer layer including a nitride semiconductor layer having a compressive mean strain relative to the Al x Ga 1-x N substrate.
9. The nitride light emitter according to claim 8 , wherein the buffer layer contains In.
10. The nitride light emitter according to claim 8 , wherein the buffer layer further includes an AlGaN layer.
11. The nitride light emitter according to claim 1 , wherein the second clad layer includes a ridge.
12. The nitride light emitter according to claim 11 , wherein the ridge includes one of a layer including In and a layer including GaN, the one of the layer including In and the layer including GaN being located closer to the second light guide layer.
13. The nitride light emitter according to claim 11 , wherein the second clad layer includes an isolation trench on a side of the ridge, the isolation trench including a width of 6 μm to 15 μm, inclusive.
14. The nitride light emitter according to claim 1 , further comprising
a first barrier layer, a first pad electrode layer, a second barrier layer, and a bonding layer that are disposed between the multilayer structure and the submount substrate and are arranged in stated order from the second clad layer, and
the second barrier layer includes a shorter side having a width smaller than a width of a shorter side of the first barrier layer.
15. The nitride light emitter according to claim 1 , further comprising
a first barrier layer, a first pad electrode layer, a second barrier layer, and a bonding layer that are disposed between the multilayer structure and the submount substrate and are arranged in stated order from the second clad layer, and
the bonding layer is further placed inward from an end of the second barrier layer in a region between second barrier layer and the first barrier layer.
16. The nitride light emitter according to claim 1 , wherein:
the first clad layer comprises AlGaN, and
the second clad layer comprises AlGaN.
17. A nitride light emitter, comprising:
a nitride semiconductor light-emitting element including an Al x Ga 1-x N substrate, where x ranges from 0 to 1, inclusive, and a multilayer structure disposed above the Al x Ga 1-x N substrate, the multilayer structure including a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked in stated order from the Al x Ga 1-x N substrate; and
a submount substrate on which the nitride semiconductor light-emitting element is mounted, wherein:
the nitride semiconductor light-emitting element is mounted on the submount substrate such that the multilayer structure and the submount substrate are opposed to each other,
the submount substrate comprises diamond,
the nitride semiconductor light-emitting element includes a cavity and a current non-injection region in a vicinity of an end face of the cavity,
in a stacked structure consisting of the first clad layer and the layers that are stacked on the first clad layer in a direction from the first clad layer toward the second clad layer, a mean strain of the stacked structure with respect to the Al x Ga 1-x N substrate is compressive, and
the mean strain of the stacked structure is a value obtained by dividing, by a thickness of the stacked structure, a total value resulting from adding, for all of the layers stacked in the stacked structure, a value obtained by multiplying a mean strain of each of the layers stacked in the stacked structure with a thickness of each of the layers.
18. The nitride light emitter according to claim 17 , wherein:
the first clad layer comprises AlGaN, and
the second clad layer comprises AlGaN.
19. A nitride light emitter, comprising:
a nitride semiconductor light-emitting element including an Al x Ga 1-x N substrate, where x ranges from 0 to 1, inclusive, and a multilayer structure disposed above the Al x Ga 1-x N substrate, the multilayer structure including a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked in stated order from the Al x Ga 1-x N substrate; and
a submount substrate on which the nitride semiconductor light-emitting element is mounted, wherein:
the Al x Ga 1-x N substrate has a thickness of 75 μm to 95 μm, inclusive,
the nitride semiconductor light-emitting element is mounted on the submount substrate such that the multilayer structure and submount substrate are opposed to each other,
the submount substrate comprises diamond,
the nitride semiconductor light-emitting element includes a cavity and a current non-injection region in a vicinity of an end face of the cavity,
in a stacked structure consisting of the first clad layer and the layers that are stacked on the first clad layer in a direction from the first clad layer toward the second clad layer, a mean strain of the stacked structure with respect to the Al x Ga 1-x N substrate is compressive, and
the mean strain of the stacked structure is a value obtained by dividing, by a thickness of the stacked structure, a total value resulting from adding, for all of the layers stacked in the stacked structure, a value obtained by multiplying a mean strain of each of the layers stacked in the stacked structure with a thickness of each of the layers.
20. The nitride light emitter according to claim 19 , wherein
the cavity includes a length of at least 600 μm.
21. The nitride light emitter according to claim 19 , wherein:
the first clad layer comprises AlGaN, and
the second clad layer comprises AlGaN.
22. A nitride light emitter, comprising:
a nitride semiconductor light-emitting element including an Al x Ga 1-x N substrate, where x ranges from 0 to 1, inclusive, and a multilayer structure disposed above the AlxGa1−xN substrate, the multilayer structure including a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked in stated order from the Al x Ga 1-x N substrate; and
a submount substrate on which the nitride semiconductor light-emitting element is mounted, wherein:
the multilayer structure has a compressive mean strain relative to the Al x Ga 1-x N substrate,
the nitride semiconductor light-emitting element is mounted on the submount substrate such that the multilayer structure and submount substrate are opposed to each other,
the submount substrate comprises diamond,
the nitride semiconductor light-emitting element includes a cavity and a current non-injection region in a vicinity of an end face of the cavity,
the quantum-well active layer includes a well layer and a barrier layer,
the first light guide layer and the second light guide layer each contains an In composition of at least 2.5%,
the barrier layer contains an In composition that is higher than or equal to the In composition of each of the first light guide layer and the second light guide layer, and
the nitride semiconductor light-emitting element has a concave warp on a surface closer to the Al x Ga 1-x N substrate.
23. The nitride light emitter according to claim 22 , wherein:
the first clad layer comprises AlGaN, and
the second clad layer comprises AlGaN.