IP Library Granted Patent US 10,937,781
Granted Patent B1
US 10,937,781 · App. 16/671,391 · Granted Mar 2, 2021

Electronic device including a protection circuit

Inventors: Jaume Roig-Guitart (Oudenaarde, BE); Herbert De Vleeschouwer (Zulte, BE); Pierre Gassot (Brussels, BE); Piet Vanmeerbeek (Sleidinge, BE); Frederick Johan G Declercq (Harelbeke, BE); Aarnout Wieers (Vilvoorde, BE); Woochul Jeon (Phoenix, AZ)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L27/0266H01L27/0255H01L27/0288H01L29/7787
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Quick Facts
Patent No.
US 10,937,781
App. No.
16/671,391
Granted
Mar 2, 2021
Kind
B1
Abstract

An electronic device can include a source terminal, a gate terminal, and a protection circuit. The protection circuit can include a gate section including a first electrode and a second electrode, wherein the first electrode of the gate section is coupled to the gate terminal; and a source section including a first electrode and a second electrode, wherein the first electrode of the source section is coupled to the source terminal. The protection switch can include a control electrode, a first current-carrying electrode coupled to the gate terminal, and a second current-carrying electrode coupled to the source terminal. The second electrode of the gate section, the second electrode of the source section, and the control electrode of the protection switch can be coupled to one another. In an embodiment, the electronic device can further include an electronic component that is protected by the protection circuit.

Claims (70)

1. An electronic device comprising:

a source terminal;

a gate terminal; and

a protection circuit comprising:

a gate section including a first electrode and a second electrode, wherein the first electrode of the gate section is coupled to the gate terminal;

a source section including a first electrode and a second electrode, wherein the first electrode of the source section is coupled to the source terminal; and

a protection switch including a control electrode, a first current-carrying electrode coupled to the gate terminal, and a second current-carrying electrode coupled to the source terminal,

wherein the second electrode of the gate section, the second electrode of the source section, and the control electrode of the protection switch are coupled to one another.

2. The electronic device of claim 1 , wherein:

the gate section includes a first diode having a cathode that is the second electrode of the gate section, and

the source section includes a second diode having a cathode that is the second electrode of the source section.

3. The electronic device of claim 1 , wherein:

(1) the gate section comprises:

a first transistor including a drain electrode, a gate electrode, and a source electrode; and

a first diode including a cathode and an anode,

wherein:

the drain electrode of the first transistor, the anode of the first diode, and the gate terminal are coupled to one another,

the gate electrode of the first transistor is coupled to the cathode of the first diode, and

the drain electrode of the first transistor is coupled to the control electrode of the protection switch,

(2) the source section comprises:

a second transistor including a drain electrode, a gate electrode, and a source electrode; and

a second diode including a cathode and an anode,

wherein:

the drain electrode of the second transistor is coupled to the control electrode of the protection switch,

the gate electrode of the second transistor is coupled to the cathode of the second diode, and

the source electrode of the second transistor, the anode of the second diode, and the source terminal are coupled to one another, or

both (1) and (2).

4. The electronic device of claim 1 , wherein the protection circuit further comprises:

(1) a first transistor including a drain electrode, a gate electrode, and a source electrode, wherein:

the drain electrode of the first transistor, the gate electrode of the first transistor, and the control electrode of the protection switch are electrically connected at a first node, and

the source electrode of the first transistor and the source terminal are electrically connected at a second node;

(2) a second transistor including a drain electrode, a gate electrode, and a source electrode, wherein:

the drain electrode of the second transistor and the gate terminal are electrically connected at a third node; and

the gate electrode of the second transistor, the source electrode of the second transistor, and the control electrode of the protection switch are electrically connected at a fourth node, or

both (1) and (2).

5. The electronic device of claim 1 , wherein the gate section and the source section have a same number or different numbers of electronic components.

6. The electronic device of claim 1 , further comprising:

a drain terminal; and

a power switch including a drain electrode coupled to the drain terminal, a gate electro coupled to the gate terminal, and a source electrode coupled to the source terminal.

7. The electronic device of claim 2 , wherein the cathode of the first diode, the cathode of the second diode, and the control electrode of the protection circuit are electrically connected at a node.

8. The electronic device of claim 2 , wherein:

(1) the first diode comprises a first gated diode including a drain electrode, a gate electrode, and a source electrode, wherein the drain electrode of the first gated diode and the gate electrode of the first gated diode are coupled to each other, and the source electrode of the first gated diode is coupled to the control electrode of the protection switch,

(2) the second diode comprises a second gated diode including a drain electrode, a gate electrode, and a source electrode, wherein the drain electrode of the second gated diode is coupled to the control electrode of the protection switch, and the gate electrode of the second gated diode and the source electrode of the second gated diode are coupled to each other, or

both (1) and (2).

9. The electronic device of claim 8 , wherein the protection switch has protection switch active area width in a range of 10 mm to 20 mm, and:

(1) the first gated diode has a first active area width that is in a range from 0.1 mm to 1.0 mm,

(2) the second gated diode has a second active area width that is in a range from 0.1 mm to 1.0 mm, or

both (1) and (2).

10. The electronic device of claim 3 , wherein the protection circuit further comprises:

(1) a first resistor having a first terminal coupled to the gate electrode of the first transistor, and a second terminal coupled to the control electrode of the protection switch;

(2) a second resistor having a first terminal coupled to the gate electrode of the second component, and a second terminal coupled to the control electrode of the protection switch; or

both (1) and (2).

11. The electronic device of claim 3 , wherein the protection circuit further comprises:

(1) a third gated diode including a drain electrode, a gate electrode, and a source electrode, wherein the drain electrode of the third gated diode, the gate electrode of the third gated diode, and the control electrode of the protection switch are coupled to one another, and the source electrode of the third gated diode is coupled to the source terminal,

(2) a fourth gated diode including a drain electrode, a gate electrode, and a source electrode, wherein the drain electrode of the second gated diode is coupled to the gate terminal, and the gate electrode of the second gated diode, the source electrode of the second gated diode, and the control electrode of the protection switch are coupled to one another, or

both (1) and (2).

12. The electronic device of claim 6 , wherein the power switch has a V TH , and the protection circuit is configured such that the protection switch turns on when V GS is greater than V TH .

13. The electronic device of claim 6 , wherein the power switch occupies at least 75% of an active area of the electronic device, and the protection circuit occupies at most 25% of the active area of the electronic device.

14. The electronic device of claim 6 , wherein the power switch, the protection switch, a first transistor structure within the gate section, and a second transistor structure within the source section has threshold voltages of the transistor structures are within 20% of one another.

15. The electronic device of claim 6 , wherein the power switch and all transistor structures within the protection circuit are high electron mobility transistors.

16. The electronic device of claim 6 , wherein the power switch and all transistor structures within the protection circuit are enhancement-mode transistors.

17. The electronic device of claim 6 , wherein from a top view, wherein:

the electronic device has a first peripheral side, a second peripheral side, a third peripheral side, and a fourth peripheral side, wherein the first peripheral side is opposite the second peripheral side, the third peripheral side is opposite the fourth peripheral sides, and the first and second peripheral sides are perpendicular to the third and fourth peripheral sides,

the drain terminal is closer to the first peripheral side than the second peripheral side,

the source terminal is closer to the second peripheral side than the first peripheral side,

the power switch is between the source terminal and the drain terminal and is closer to the third peripheral side than to the fourth peripheral side, and

the protection circuit is between a gate runner and the first peripheral side and is closer to the fourth peripheral side than to the third peripheral side.

18. The electronic device of claim 12 , wherein the power switch has a V GSMax , and the protection circuit is configured such that the protection switch turns on before V GS reaches V GSMax .

19. The electronic device of claim 12 , wherein the power switch has a V GSMin , and the protection switch turn on before V GS reaches V GSMin .

20. The electronic device of claim 17 , wherein from the top view, the drain terminal is disposed between the protection circuit and the first peripheral terminal.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 054090, FRAME 0617 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064081/0167 →
SECURITY INTEREST Recorded Oct 16, 2020
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION; ON SEMICONDUCTOR CONNECTIVITY SOLUTIONS, INC.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 054090/0617 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 1, 2019
From: ROIG-GUITART, JAUME; DE VLEESCHOUWER, HERBERT; GASSOT, PIERRE; VANMEERBEEK, PIET; DECLERCQ, FREDERICK JOHAN G; WIEERS, AARNOUT; JEON, WOOCHUL
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 050888/0633 →