Metal-based etch-stop layer
A semiconductor structure includes a conductive feature, a first metal-based etch-stop layer over the underlying structure, a metal-free etch-stop layer over the first metal-based etch-stop layer, a second metal-based etch-stop layer over the metal-free etch-stop layer, an interlayer dielectric layer over the second metal-based etch-stop layer, and an interconnect structure extending through the first metal-based etch-stop layer, metal-free etch-stop layer, and the second metal-based etch-stop layer, wherein a bottom portion of the conductive interconnect structure directly contacts the conductive feature. The first metal-based etch-stop layer may include a first metallic component having one of aluminum, tantalum, titanium, or hafnium, and the second metal-based etch-stop layer may include a second metallic component the same as or different from the first metallic component. The first metal-based etch-stop layer and the second metal-based etch-stop layer may both be free of silicon.
1. A device comprising:
a first conductive feature;
a first metal-based etch-stop layer disposed directly on the first conductive feature, wherein the first metal-based etch-stop layer includes a first metallic component and is substantially free of silicon;
a metal-free etch-stop layer disposed directly on the first metal-based etch-stop layer; and
a second metal-based etch-stop layer disposed directly on the metal-free etch-stop layer, wherein the second metal-based etch-stop layer includes a second metallic component and is substantially free of silicon, wherein the first metallic component is formed of a different material than the second metallic component; and
a conductive material extending through the first metal-based etch-stop layer, the metal-free etch-stop layer and the second metal-based etch-stop layer, wherein a portion of the conductive material interfaces with the first conductive feature.
2. The device of claim 1 , further comprising:
a gate structure disposed over a substrate;
a source/drain feature associated with the gate structure and disposed on the substrate, and
wherein the first conductive feature includes a contact feature extending to the source/drain feature.
3. The device of claim 1 , wherein the metal-free etch-stop layer include a silicon containing material.
4. The device of claim 3 , wherein the silicon containing material includes a material selected from the group consisting of silicon oxide, silicon nitride, silicon carbide and silicon oxynitride.
5. The device of claim 1 , wherein the first metal-based etch-stop layer includes a material selected from the group consisting of a metal oxide, a metal nitride, a metal carbide and a metal oxynitride, and
wherein the second metal-based etch-stop layer includes a material selected from the group consisting of a metal oxide, a metal nitride, a metal carbide and a metal oxynitride.
6. A device comprising:
a first conductive feature;
a first dielectric etch-stop layer disposed directly on the first conductive feature, wherein the first dielectric etch-stop layer includes a first metallic component;
a metal-free etch-stop layer disposed directly on the first dielectric etch-stop layer, the metal-free etch-stop layer having a thickness that is at least 1.5 times a thickness of the first dielectric etch-stop layer;
a second dielectric etch-stop layer disposed directly on the metal-free etch-stop layer, wherein the second dielectric etch-stop layer includes a second metallic component; and
a conductive material extending through and physically contracting each of the first metal-based etch-stop layer, the metal-free etch-stop layer and the second metal-based etch-stop layer, wherein a portion of the conductive material physically contacts the first conductive feature.
7. The device of claim 6 , wherein the first metallic component includes a material selected from the group consisting of aluminum (Al), tantalum (Ta), titanium (Ti), hafnium (Hf), molybdenum (Mo), silver (Ag), gold (Au), manganese (Mn) and zirconium (Zr),
wherein the second metallic component includes a material selected from the group consisting of aluminum (Al), tantalum (Ta), titanium (Ti), hafnium (Hf), molybdenum (Mo), silver (Ag), gold (Au), manganese (Mn) and zirconium (Zr).
8. The device of claim 7 , wherein the first metallic component is formed of a different material than the second metallic component.
9. The device of claim 6 , wherein at least one of the first dielectric etch-stop layer and the second dielectric etch-stop layer is substantially free of silicon.
10. The device of claim 6 , wherein the first dielectric etch-stop layer and the second dielectric etch-stop layer are substantially free of silicon, and wherein the metal-free etch-stop layer includes a silicon containing material.
11. The device of claim 6 , wherein the metal-free etch-stop layer includes a material selected from the group consisting of an oxide, a nitride, a carbide, and an oxynitride.
12. The device of claim 6 , wherein the first conductive feature includes a metal material.
13. A method comprising:
forming a first dielectric etch-stop layer over a conductive structure, the first dielectric etch-stop layer including a first metal and being substantially free of silicon;
forming a silicon-containing etch-stop layer over the first dielectric etch-stop layer;
forming a second dielectric etch-stop layer over the silicon-containing etch-stop layer, the second dielectric etch-stop layer including a second metal and being substantially free of silicon;
forming a trench extending through the first dielectric etch-stop layer, the silicon-containing etch-stop layer and the second dielectric etch-stop layer, wherein the forming of the trench extending through the first dielectric etch-stop layer, the silicon-containing etch-stop layer and the second dielectric etch-stop layer includes:
performing a first wet etching process to etch a portion of the second dielectric etch-stop layer;
performing a dry etching process to etch a portion of the silicon-containing etch-stop layer; and
performing a second wet etching process to etch a portion of the first dielectric etch-stop layer; and
forming a conductive material in the trench.
14. The method of claim 13 , wherein the conductive structure is part of an interconnect structure.
15. The method of claim 13 , further comprising forming an interlayer dielectric layer over the first dielectric etch-stop layer, and
wherein the forming of the trench extending through the first dielectric etch-stop layer, the silicon-containing etch-stop layer and the second dielectric etch-stop layer includes forming the trench through the interlayer dielectric layer.
16. The method of claim 15 , wherein the trench has a first width and second width in the interlayer dielectric layer, the first width being different than the second width, and
wherein the conductive material has the first width and the second width.
17. The method of claim 13 , wherein a portion of the conductive structure is exposed within the trench, and
wherein the forming of the conductive material in the trench includes forming the conductive material directly on the portion of the conductive structure.
18. The method of claim 13 , wherein the first metal is different than the second metal.
19. The device of claim 1 , wherein the metal-free etch-stop layer has a thickness that is at least 1.5 times a thickness of the second metal-based etch-stop layer.
20. The device of claim 1 , wherein the metal-free etch-stop layer includes a material selected from the group consisting of an oxide, a nitride, a carbide, and an oxynitride.