IMPEDANCE MATCHING NETWORK AND METHOD
In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. The matching network includes first and second variable capacitors, and a sensor configured to measure a parameter related to the plasma chamber. A control circuit carries out a matching process of determining a parameter-based value based on the measured parameter; inputting the parameter-based value into a match configuration look-up table to determine a match configuration for reducing a reflected power, the match configuration comprising a first variable capacitor configuration, a second variable capacitor configuration, and an RF source frequency; and causing an altering of the first variable capacitor to the first variable capacitor configuration, the second variable capacitor to the second variable capacitor configuration, and the RF source to the RF source frequency.
1 . An impedance matching network comprising:
a radio frequency (RF) input configured to operably couple to an RF source;
an RF output configured to operably couple to a plasma chamber;
a first variable capacitor;
a second variable capacitor distinct from the first variable capacitor;
a sensor configured to measure a parameter related to the plasma chamber; and
a control circuit operably coupled to the first variable capacitor, the second variable capacitor, and the sensor, the control circuit configured to carry out a matching process of:
determining a parameter-based value based on the measured parameter;
inputting the parameter-based value into a match configuration look-up table to determine a match configuration for reducing a reflected power, the match configuration comprising a first variable capacitor configuration, a second variable capacitor configuration, and an RF source frequency; and
causing an altering of the first variable capacitor to the first variable capacitor configuration, the second variable capacitor to the second variable capacitor configuration, and the RF source to the RF source frequency.
2 . The matching network of claim 1 wherein the match configuration look-up table comprises, for each of a plurality of parameter-based values, a corresponding match configuration, each corresponding match configuration comprising a first variable capacitor configuration, a second variable capacitor configuration, and an RF source frequency.
3 . The matching network of claim 1 wherein the match configuration look-up table comprises S-parameter matrices.
4 . The matching network of claim 3 wherein the S-parameter matrices are determined using quantized values for the first and second variable capacitors.
5 . The matching network of claim 1 wherein the control circuit is further configured to repeat the matching process.
6 . The matching network of claim 1 wherein the parameter-based value is a load impedance value.
7 . The matching network of claim 6 wherein the load impedance value is determined by inputting an input impedance value for the RF input of the matching network into a parameter matrix look-up table, the input impedance value being determined based on the measured parameter value.
8 . The matching network of claim 1 wherein the first variable capacitor is coupled in series between the RF input and the RF output and is a vacuum variable capacitor (VVC) or an electronically variable capacitor (EVC), and the second variable capacitor is coupled in parallel between a ground and the RF input or the RF output and is a VVC or an EVC.
9 . A method of impedance matching comprising:
a) coupling a matching network between an RF source and a plasma chamber, the matching network comprising a first variable capacitor and a second variable capacitor distinct from the first variable capacitor;
b) measuring a parameter related to the plasma chamber;
c) determining a parameter-based value based on the measured parameter;
d) inputting the parameter-based value into a match configuration look-up table to determine a match configuration for reducing a reflected power, the match configuration comprising a first variable capacitor configuration, a second variable capacitor configuration, and an RF source frequency; and
e) causing an altering of the first variable capacitor to the first variable capacitor configuration, the second variable capacitor to the second variable capacitor configuration, and the RF source to the RF source frequency.
10 . The method of claim 9 wherein the match configuration look-up table comprises, for each of a plurality of parameter-based values, a corresponding match configuration, each corresponding match configuration comprising a first variable capacitor configuration, a second variable capacitor configuration, and an RF source frequency.
11 . The method of claim 9 wherein the match configuration look-up table comprises S-parameter matrices.
12 . The method of claim 11 wherein the S-parameter matrices are determined using quantized values for the first and second variable capacitors.
13 . The method of claim 9 wherein steps b) to e) are repeated.
14 . The method of claim 9 wherein the parameter-based value is a load impedance value.
15 . The method of claim 14 wherein the load impedance value is determined by inputting an input impedance value for an input of the matching network into a parameter matrix look-up table, the input impedance value being determined based on the measured parameter value.
16 . The method of claim 9 wherein the first variable capacitor is coupled in series between the RF input and the RF output and is a vacuum variable capacitor (VVC) or an electronically variable capacitor (EVC), and the second variable capacitor is coupled in parallel between a ground and the RF input or the RF output and is a VVC or an EVC.
17 . A semiconductor processing tool comprising:
a plasma chamber configured to deposit a material onto a substrate or etch a material from the substrate; and
an impedance matching network operably coupled to the plasma chamber, the matching network comprising:
an RF input configured to operably couple to an RF source;
an RF output configured to operably couple to the plasma chamber;
a first variable capacitor;
a second variable capacitor distinct from the first variable capacitor;
a sensor configured to measure a parameter related to the plasma chamber; and
a control circuit operably coupled to the first variable capacitor, the second variable capacitor, and the sensor, the control circuit configured to carry out a matching process of:
determining a parameter-based value based on the measured parameter;
inputting the parameter-based value into a match configuration look-up table to determine a match configuration for reducing a reflected power, the match configuration comprising a first variable capacitor configuration, a second variable capacitor configuration, and an RF source frequency; and
causing an altering of the first variable capacitor to the first variable capacitor configuration, the second variable capacitor to the second variable capacitor configuration, and the RF source to the RF source frequency.
18 . A method of manufacturing a semiconductor, the method comprising:
placing a substrate in a plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate;
coupling a matching network between an RF source and a plasma chamber, the matching network comprising a first variable capacitor and a second variable capacitor distinct from the first variable capacitor;
measuring a parameter related to the plasma chamber;
determining a parameter-based value based on the measured parameter;
inputting the parameter-based value into a match configuration look-up table to determine a match configuration for reducing a reflected power, the match configuration comprising a first variable capacitor configuration, a second variable capacitor configuration, and an RF source frequency; and
causing an altering of the first variable capacitor to the first variable capacitor configuration, the second variable capacitor to the second variable capacitor configuration, and the RF source to the RF source frequency.