IP Library Granted Patent US 10,667,388
Granted Patent B2
US 10,667,388 · App. 16/673,719 · Granted May 26, 2020

Optical waveguide having aluminum nitride thin film

Inventors: Henry Meyer Daghighian (Redwood City, CA); Steven C. Bird (San Jose, CA)
Assignee: II-VI Delaware Inc.
H05K1/0274G02B6/122G02B6/124G02B6/12007G02B6/1221G02B6/132G02B6/136G02B6/42H01P3/081H05K1/0201H05K1/0207H05K1/028H05K1/032H05K1/09H05K1/115H05K3/4688G02B6/4214G02B6/4269G02B2006/121G02B2006/12035G02B2006/12104G02B2006/12107G02B2006/12164H05K1/024H05K1/0209H05K3/323H05K3/4605H05K3/4611H05K3/4614H05K3/4638H05K2201/0154H05K2201/09918
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Quick Facts
Patent No.
US 10,667,388
App. No.
16/673,719
Granted
May 26, 2020
Kind
B2
Abstract

An optical waveguide is disclosed. In a disclosed embodiment, the optical waveguide includes a first aluminum nitride (AlN) thin film disposed on a layer of high-frequency polymer. A second AlN thin film is embedded in the first AlN thin film. In disclosed embodiments, the nitrogen concentration level of the first AlN thin film is different than the concentration level of the second AlN thin film.

Claims (11)

1. An optical waveguide comprising:

a first aluminum nitride (AlN) thin film disposed on a layer of high-frequency polymer; and

a second AlN thin film embedded in the first AlN thin film;

wherein a first nitrogen concentration level of the first AlN thin film is different than a second nitrogen concentration level of the second AlN thin film.

2. The AlN substrate of claim 1 , wherein the AlN substrate is at least partially transparent and a first index of refraction of the first AlN thin film is different than a second index of refraction of the second AlN thin film.

3. The AlN substrate of claim 2 , wherein the AlN substrate is between 85%-90% transparent for wavelengths between 850 nanometers and 1550 nanometers.

4. The AlN substrate of claim 1 , wherein the second AlN thin film is embedded in the first AlN thin film to guide a light beam to propagate through the second AlN thin film.

5. The optical waveguide of claim 1 , wherein the first AlN thin film and the second AlN thin film form a trench waveguide.

6. The optical waveguide of claim 1 , wherein the second AlN thin film is selectively etched to form one or more of:

an etched Bragg grating configured to reflect or transmit an optical signal with a particular wavelength; or

distributed Bragg reflectors that operate as a wavelength division multiplexing (WDM) filter.

Assignments (3)
SECURITY INTEREST Recorded Jul 1, 2022
From: II-VI INCORPORATED; II-VI DELAWARE, INC.; M CUBED TECHNOLOGIES, INC.; II-VI PHOTONICS (US), INC.; PHOTOP TECHNOLOGIES, INC.; COHERENT, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 060562/0254 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2020
From: FINISAR CORPORATION
To: II-VI DELAWARE, INC.
Reel/Frame 052286/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 4, 2019
From: DAGHIGHIAN, HENRY MEYER; BIRD, STEVEN C.
To: FINISAR CORPORATION
Reel/Frame 050910/0280 →