Multi-chip package structures having embedded chip interconnect bridges and fan-out redistribution layers

1. A method for constructing a package structure comprising:

bonding a chip interconnect bridge to a carrier substrate using a die attach film, wherein the chip interconnect bridge comprises contact pads disposed on a top side of the chip interconnect bridge;

forming a first fan-out redistribution layer structure which surrounds sidewalls of the chip interconnect bridge and which is disposed over the top side of the chip interconnect bridge;

direct chip attaching at least a first integrated circuit chip and a second integrated circuit chip to the first fan-out redistribution layer structure, wherein the first fan-out redistribution layer structure comprises input/output connections between the contact pads on the top side of the chip interconnect bridge and the first and second integrated circuit chips;

removing the carrier substrate to expose a bottom side of the first fan-out redistribution layer structure and the die attach film;

forming a second fan-out redistribution layer structure on the exposed bottom sides of the first fan-out redistribution layer structure and the die attach film, wherein the second fan-out redistribution layer structure comprises vertical contacts formed through the die attach film in contact with a bottom side of the chip interconnect bridge; and

forming solder bumps on a bottom side of the second fan-out redistribution layer structure.

2. The method of claim 1 , wherein forming the first fan-out redistribution layer structure comprises:

forming a first redistribution layer that surrounds the sidewalls of the chip interconnect bridge; and

forming a second redistribution layer over the first redistribution layer and the top side of the chip interconnect bridge.

3. The method of claim 2 , wherein the first redistribution layer comprises an array of via contacts disposed within a first insulating layer.

4. The method of claim 3 , wherein the first insulating layer comprises a pre-patterned laminate film which is bonded to the carrier substrate, and which comprises an opening that aligns to a footprint of the chip interconnect bridge.

5. The method of claim 2 , wherein forming the first redistribution layer that surrounds the sidewalls of the chip interconnect bridge comprises:

forming a plurality of metallic pillar structures over a surface of the carrier substrate;

bonding the chip interconnect bridge to a region of the carrier substrate which is devoid of the metallic pillar structures; and

forming a dielectric layer which encapsulates the metallic pillar structures and which surrounds the sidewalls of the chip interconnect bridge.

6. The method of claim 1 , wherein the first fan-out redistribution layer structure comprises metal lines that are formed with critical dimensions comprising a line width of 8 μm or less, and a line spacing of 8 μm or less a.

7. The method of claim 1 , wherein the first integrated circuit chip comprises a processor chip and wherein the second integrated circuit chip comprises a memory chip.

8. The method of claim 1 , wherein the first integrated circuit chip comprises a hardware accelerator chip, and wherein the second integrated circuit chip comprises a memory chip.

9. A method for constructing a package structure comprising:

forming a first stack of redistribution layers on a surface of a carrier substrate;

forming a trench in the first stack of redistribution layers;

mounting a chip interconnect bridge within the trench using a die attach film;

forming a second stack of redistribution layers over the first stack of redistribution layers and a top side of the chip interconnect bridge, wherein the first and second stacks of redistribution layers form a first fan-out redistribution layer structure;

direct chip attaching at least a first integrated circuit chip and a second integrated circuit chip to an upper surface of the second stack of redistribution layers, wherein the second stack of redistribution layers comprises input/output connections between contact pads on the top side of the chip interconnect bridge and the first and second integrated circuit chips;

removing the carrier substrate to expose a bottom side of the first fan-out redistribution layer structure and a bottom side of the die attach film; and

forming a second fan-out redistribution layer structure on the exposed bottom sides of the first fan-out redistribution layer structure and the die attach film, wherein the second fan-out redistribution layer structure comprises vertical contacts formed through the die attach film in contact with a bottom side of the chip interconnect bridge.

10. The method of claim 9 , further comprising forming solder bumps on a bottom side of the second fan-out redistribution layer structure.

11. The method of claim 9 , wherein forming the trench in the first stack of redistribution layers comprises:

etching the trench through the first stack of redistribution layers down to the surface of the carrier substrate; and

bonding the chip interconnect bridge to the surface of the carrier substrate exposed at a bottom of the trench using the die attach film.

12. The method of claim 9 , wherein the first integrated circuit chip comprises a processor chip and wherein the second integrated circuit chip comprises a memory chip.

13. The method of claim 9 , wherein the first integrated circuit chip comprises a hardware accelerator chip, and wherein the second integrated circuit chip comprises a memory chip.

14. The method of claim 9 , wherein the first fan-out redistribution layer structure comprises metal lines that are formed with critical dimensions comprising a line width of 8 μm or less, and a line spacing of 8 μm or less.

15. A method for constructing a package structure comprising:

forming a first stack of redistribution layers on a surface of a carrier substrate;

forming a trench in the first stack of redistribution layers;

mounting a chip interconnect bridge within the trench;

forming a second stack of redistribution layers over the first stack of redistribution layers and a top side of the chip interconnect bridge, wherein the first and second stacks of redistribution layers form a first fan-out redistribution layer structure;

direct chip attaching at least a first integrated circuit chip and a second integrated circuit chip to an upper surface of the second stack of redistribution layers, wherein the second stack of redistribution layers comprises input/output connections between contact pads on the top side of the chip interconnect bridge and the first and second integrated circuit chips; and

removing the carrier substrate to expose a bottom side of the first fan-out redistribution layer structure;

wherein forming the trench in the first stack of redistribution layers comprises:

etching a trench through at least one redistribution layer of the first stack of redistribution layers down to a surface of an underlying redistribution layer; and

bonding the chip interconnect bridge to the surface of the underlying redistribution layer exposed at a bottom of the trench using solder bumps.

16. The method of claim 15 , wherein the underlying redistribution layer comprises metallic contacts which form backside connections to a bottom side of the chip interconnect bridge through the solder bumps.

17. The method of claim 15 , further comprising forming at least one additional redistribution layer on the exposed bottom side of the first fan-out redistribution layer structure.

18. The method of claim 17 , wherein the at least one additional redistribution layer comprises metallic contacts which form backside connections to a bottom side of the chip interconnect bridge.

19. The method of claim 17 , further comprising forming solder bumps on a bottom side of the at least one additional redistribution layer.

20. The method of claim 15 , wherein the first integrated circuit chip comprises a processor chip and wherein the second integrated circuit chip comprises a memory chip.