IP Library Granted Patent US 10,931,265
Granted Patent B1
US 10,931,265 · App. 16/677,543 · Granted Feb 23, 2021

PWM signal generation and error calibration circuit

Inventor: Dongshi Zhao (Xiamen, CN)
Assignee: SI EN TECHNOLOGY (XIAMEN) LIMITED
H03K3/017H05B45/37
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Quick Facts
Patent No.
US 10,931,265
App. No.
16/677,543
Granted
Feb 23, 2021
Kind
B1
Abstract

A PWM signal generation and error calibration circuit includes an amplifier OP 1 , an amplifier OP 2 , a comparator CMP 1 , a comparator CMP 2 , PMOS field-effect transistors M 1 -M 16 , a resistor R 14 , a resistor R_FRE, variable resistors R 15 -R 16 , a resistor R 17 , a capacitor C 1 , a matched resistance module circuit, a current drain IDC, and a 14-bit counter. The PWM signal generation and error calibration circuit saves chip costs and supports a wide PWM signal frequency range, while being able to calibrate all duty cycle errors of PWM signals in the range between 0% and 100% with improved accuracy.

Claims (11)

1. A PWM signal generation and error calibration circuit, comprising a first amplifier, a second amplifier, a first comparator, a second comparator, a first, a second, a third, a fourth, a fifth, a sixth, a seventh, an eighth, a ninth, a tenth, an eleventh, a twelfth, a thirteenth, a fourteenth, a fifteenth, and a sixteenth PMOS field-effect transistors, a first resistor, a second resistor, a first and a second variable resistors, a third resistor, a first capacitor, a matched resistance module circuit, a current drain, and a 14-bit counter;

the first amplifier having a positive input terminal thereof connected to a reference voltage and having an output terminal thereof connected to a gate of the fifteenth PMOS field-effect transistor; the first, second and fifteenth PMOS field-effect transistors and the first resistor being connected in series between a power source and a ground; the first amplifier having a negative input terminal thereof connected between the fifteenth PMOS field-effect transistor and the first resistor;

the third and the fourth PMOS field-effect transistors and the first variable resistor being connected in series between the power source and the ground;

the fifth and sixth PMOS field-effect transistors and the second variable resistor being connected in series between the power source and the ground;

the seventh PMOS field-effect transistor and the eighth PMOS field-effect transistor jointly forming a PMOS folded cascode current source; the seventh, the eighth and the sixteenth PMOS field-effect transistors being connected in series between the power source and a relevant input node of the matched resistance module circuit;

gates of the first, the third, the fifth and the seventh PMOS field-effect transistors being connected to a drain of the fifteenth PMOS field-effect transistor, respectively; gates of the second, the fourth, the sixth and the eighth PMOS field-effect transistors being connected to a bias voltage of the folded cascode current source;

the second amplifier having a positive input terminal thereof connected to a setting voltage for setting a frequency for a triangle wave, the second amplifier having an output terminal thereof connected to a gate of the fourteenth PMOS field-effect transistor; the ninth, the tenth and the fourteenth PMOS field-effect transistors and the second resistor being connected in series between the power source and the ground; the second amplifier (OP 2 ) having a negative input terminal connected between the fourteenth PMOS field-effect transistor and the second resistor, and the second amplifier having the negative input terminal further connected to the current drain, the current drain being used to set a PWM frequency of the second resistor that is in an open-circuit state;

the eleventh PMOS field-effect transistor and the twelfth PMOS field-effect transistor forming a PMOS folded cascode current source by being paired and symmetrically matched across the ninth PMOS field-effect transistor; the eleventh, the twelfth, and the thirteenth PMOS field-effect transistors being connected in series between the power source and the relevant input node of the matched resistance module circuit;

gates of the ninth and the eleventh PMOS field-effect transistors being connected to a drain of the fourteenth PMOS field-effect transistor, respectively; gates of the tenth and the twelfth PMOS field-effect transistors being connected to the bias voltage of the folded cascode current source, respectively; and

the 14-bit counter having 14 output terminals thereof correspondingly connected to gates of 14 tubes of the thirteenth PMOS field-effect transistor, respectively; the thirteenth PMOS field-effect transistor having 14 output terminals thereof connected to 14 input nodes of the matched resistance module circuit, respectively; the thirteenth PMOS field-effect transistor having the output terminals thereof further connected to an input terminal of an RC filter circuit whose output is connected to a negative input terminal of the first comparator and a positive input terminal of the second comparator; the first comparator having a positive input terminal thereof connected to a voltage which is a maximum voltage to set the triangle wave; the first comparator having an output terminal thereof connected to a reset terminal of the 14-bit counter; the second comparator having a negative input terminal thereof connected to a duty ratio setting pin; and the second comparator outputting a PWM signal at an output terminal thereof.

2. The PWM signal generation and error calibration circuit of claim 1 , wherein the first, the second, the third, the fourth, the fifth, the sixth, the seventh and the eighth PMOS field-effect transistors each have an even number of tubes, and have such a layout that the first and second PMOS field-effect transistors are centered and flanked from two sides by the third, the fourth, the fifth, and the sixth, the seventh, the eighth PMOS field-effect transistors successively, in which the first, the third, the fifth and the seventh PMOS field-effect transistors are symmetrically matched across a geometric center in the layout while the second, the fourth, the sixth and eighth PMOS field-effect transistors are symmetrically matched across the geometric center in the layout.

Assignments (2)
CHANGE OF NAME Recorded Jul 5, 2024
From: SI EN TECHNOLOGY (XIAMEN) LIMITED
To: LUMISSIL MICROSYSTEMS LIMITED
Reel/Frame 068133/0743 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 8, 2019
From: ZHAO, DONGSHI
To: SI EN TECHNOLOGY (XIAMEN) LIMITED
Reel/Frame 050954/0211 →
Priority Claims (1)
CN 201910764313.7 · Aug 19, 2019 · national