Semiconductor device with optically-transmissive layer and manufacturing method thereof

1. A semiconductor device, comprising:

a redistribution structure comprising a redistribution structure upper surface and a redistribution structure lower surface that is opposite the redistribution structure upper surface;

a semiconductor die comprising a die upper surface and a die lower surface that is opposite the die upper surface, the semiconductor die including a transmitter configured to transmit electromagnetic radiation from the transmitter and out of the semiconductor die through the die upper surface;

an optically-transmissive layer coupled to the die upper surface, wherein the optically-transmissive layer permits electromagnetic radiation transmitted out of the semiconductor die to pass through the optically-transmissive layer; and

conductive bumps coupling the die lower surface to the redistribution structure upper surface.

2. The semiconductor device of claim 1 , further comprising:

conductive interconnection structures on the redistribution structure lower surface;

wherein one or more of the conductive interconnection structures is operatively coupled to the transmitter via the redistribution structure and the conductive bumps.

3. The semiconductor device of claim 2 , wherein the conductive interconnection structures include solder balls.

4. The semiconductor device of claim 1 , further comprising:

a silicon layer comprising a silicon layer upper surface and a silicon layer lower surface;

wherein the redistribution structure lower surface is on the silicon layer upper surface.

5. The semiconductor device of claim 1 , wherein the electromagnetic radiation comprises light transmitted from the transmitter.

6. The semiconductor device of claim 1 , further comprising:

a mold material that contacts the redistribution structure upper surface and a die side surface;

wherein the die side surface joins the die upper surface to the die lower surface.

7. The semiconductor device of claim 6 , wherein the optically-transmissive layer contacts the mold material.

8. The semiconductor device of claim 1 , further comprising:

an underfill material between the redistribution structure upper surface and the die lower surface;

wherein the underfill material contacts and encapsulates the conductive bumps.

9. The semiconductor device of claim 8 , further comprising:

a mold material that contacts the underfill material, the upper redistribution structure surface, and a die side surface;

wherein the die side surface joins the die upper surface to the die lower surface.

10. The semiconductor device of claim 9 , wherein the mold material comprises a material different than the underfill material.

11. The semiconductor device of claim 1 , further comprising:

a mold material that contacts the redistribution structure upper surface and encapsulates the semiconductor die;

wherein at least a portion of the die upper surface is exposed through an upper surface of the mold material.

12. A semiconductor device, comprising:

an interposer comprising an interposer upper surface and an interposer lower surface that is opposite the interposer upper surface;

conductive interconnection structures on the interposer lower surface;

a semiconductor die operatively coupled to the interposer, the semiconductor die comprising a die upper surface, a die lower surface that is opposite the die upper surface, and a die side surface that joins the die upper surface to the die lower surface;

a mold material that contacts the interposer upper surface and the die side surface; and

an optically-transmissive layer over the die upper surface;

wherein the optically-transmissive layer contacts the mold material;

wherein the semiconductor die includes a transmitter operatively coupled to the conductive interconnection structures via the interposer;

wherein the transmitter is configured to transmit light from the transmitter and out of the semiconductor die through the die upper surface; and

wherein the optically-transmissive layer permits light transmitted out of the semiconductor die to pass through the optically-transmissive layer.

13. The semiconductor device of claim 12 , wherein a lower surface of the optically-transmissive layer contacts the mold material.

14. The semiconductor device of claim 12 , further comprising:

conductive bumps coupling the die lower surface to the interposer upper surface; and

an underfill material between the interposer upper surface and the die lower surface;

wherein the underfill material contacts and encapsulates the conductive bumps.

15. The semiconductor device of claim 14 , wherein the mold material further contacts the underfill material.

16. The semiconductor device of claim 15 , wherein the mold material comprises a material different than the underfill material.

17. The semiconductor device of claim 12 , further comprising conductive bumps that couple the die lower surface to the interposer upper surface.

18. A method of forming a semiconductor device, the method comprising:

forming a redistribution structure comprising a redistribution structure upper surface and a redistribution structure lower surface that is opposite the redistribution structure upper surface;

coupling, to the redistribution structure upper surface, a semiconductor die comprising a die upper surface and a die lower surface that is opposite the die upper surface, wherein the semiconductor die includes a transmitter configured to transmit electromagnetic radiation from the transmitter and out of the semiconductor die through the die upper surface; and

forming a mold material that contacts the redistribution structure upper surface, a die side surface that joins the die upper surface to the die lower surface, and an optically-transmissive layer over the die upper surface.

19. The method of claim 18 , wherein forming the redistribution structure comprising forming the redistribution structure on a semiconductor layer.

20. The method of claim 18 , wherein coupling the semiconductor die to the redistribution structure directly couples conductive interconnection structures between the die lower surface and the redistribution structure upper surface.