IP Library Granted Patent US 11,387,825
Granted Patent B2
US 11,387,825 · App. 16/689,687 · Granted Jul 12, 2022

Overheat protection circuit and semiconductor device including the same

Inventor: Kaoru Sakaguchi (Chiba, JP)
Assignee: ABLIC INC.
H03K17/0822H01L27/02H02H5/04H02H7/12H03K17/082H03K17/0812H03K2017/0806
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Quick Facts
Patent No.
US 11,387,825
App. No.
16/689,687
Granted
Jul 12, 2022
Kind
B2
Abstract

An overheat protection circuit includes a first constant current source which supplies a first constant current to a temperature sensitive element, a first transistor provided between the temperature sensitive element and the first constant current source, an output current detection circuit which controls a gate voltage of the first transistor by a voltage based on a sense current corresponding to an output current of a semiconductor device, and an output circuit which supplies an overheat detection signal based on a result of comparison between a temperature sensitive current and the first constant current.

Claims (16)

1. An overheat protection circuit configured to protect a semiconductor device from overheat, comprising:

a temperature sensitive element configured to make a temperature sensitive current corresponding to a temperature of the semiconductor device flow;

a first constant current source configured to supply a first constant current to the temperature sensitive element;

a first transistor provided between the temperature sensitive element and the first constant current source;

an output current detection circuit configured to control a gate voltage of the first transistor by a voltage based on a sense current corresponding to an output current of the semiconductor device; and

an output circuit configured to supply an overheat detection signal based on a result of comparison obtained by an inverter circuit having an input terminal connected to a connection point between the first constant current source and the first transistor, wherein the inverter circuit compares the temperature sensitive current and the first constant current.

2. The overheat protection circuit according to claim 1 ,

wherein the output current detection circuit includes a second transistor containing a gate supplied with a voltage corresponding to the output current of the semiconductor device, and

a second constant current source configured to limit a current of second transistor.

3. The overheat protection circuit according to claim 2 ,

wherein the output current detection circuit further includes a third transistor connected in parallel with the second transistor, the third transistor containing a gate supplied with a voltage corresponding to the overheat detection signal,

wherein while the output circuit is supplying the overheat detection signal, the output current detection circuit turns ON the third transistor to control the gate voltage of the first transistor in such a manner that the first transistor supplies a prescribed current unrelated to the output current of the semiconductor device.

4. A semiconductor device comprising:

an output transistor containing a gate;

a drive circuit configured to supply a control voltage to the gate of the output transistor; and

the overheat protection circuit according to claim I configured to control a gate voltage of the output transistor in accordance with the control voltage of the drive circuit.

Assignments (2)
CHANGE OF ADDRESS Recorded Jun 8, 2023
From: ABLIC INC.
To: ABLIC INC.
Reel/Frame 064021/0575 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 21, 2019
From: SAKAGUCHI, KAORU
To: ABLIC INC.
Reel/Frame 051075/0250 →