IP Library Granted Patent US 11,302,719
Granted Patent B2
US 11,302,719 · App. 16/694,428 · Granted Apr 12, 2022

Thin film transistor substrate and display panel

Inventors: Yugo Takeda (Osaka, JP); Masafumi Hirata (Hyogo, JP); Hiroaki Iwato (Hyogo, JP)
Assignee: PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.
H01L27/124G02F1/136286
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Quick Facts
Patent No.
US 11,302,719
App. No.
16/694,428
Granted
Apr 12, 2022
Kind
B2
Abstract

A thin film transistor substrate includes: a plurality of gate signal lines extending in a first direction; a plurality of gate lead-out lines and a plurality of dummy gate lead-out lines extending in a second direction; a plurality of common lines extending in at least one of the first direction and the second direction in the pixel region; and a common electrode provided opposite to a pixel electrode and electrically connected to the plurality of common lines. The plurality of gate lead-out lines are connected to the gate signal lines at least at one point of a plurality of intersections between the plurality of gate signal lines and the plurality of gate lead-out lines, and the common potential is applied to the plurality of dummy gate lead-out lines.

Claims (25)

1. A thin film transistor substrate including a pixel region constructed with a plurality of pixels and a frame region surrounding the pixel region, the thin film transistor substrate comprising:

thin film transistors and pixel electrodes provided in each of the plurality of pixels respectively;

a plurality of gate signal lines extending in a first direction in the pixel region and supplying a gate signal to the thin film transistors in the plurality of pixels;

a plurality of gate lead-out lines and a plurality of dummy gate lead-out lines extending in a second direction different from the first direction in the pixel region;

a plurality of common lines extending in at least one of the first direction and the second direction in the pixel region, a common potential being applied to the plurality of common lines;

a common electrode provided opposite to the pixel electrode and electrically connected to the plurality of common lines;

a shield electrode formed in the frame region, the common potential being applied to the shield electrode; and

a plurality of first connection wirings respectively connecting the plurality of dummy gate lead-out lines and the shield electrode through respective first contact holes made in the frame region, wherein

the plurality of gate lead-out lines are connected to the plurality of gate signal lines at least at one point of a plurality of intersections between the plurality of gate signal lines and the plurality of gate lead-out lines, and

the common potential is applied to the plurality of dummy gate lead-out lines.

2. The thin film transistor substrate according to claim 1 , further comprising:

a plurality of source signal lines extending in the second direction in the pixel region and supplying a data signal to the thin film transistors in the plurality of pixels;

a gate terminal including a plurality of gate terminal electrodes connected to the plurality of gate lead-out lines respectively; and

a source terminal including a plurality of source terminal electrodes connected to the plurality of source signal lines respectively,

wherein the gate terminal and the source terminal are provided in one of a pair of long sides in the frame region of the thin film transistor substrate.

3. The thin film transistor substrate according to claim 1 , wherein the plurality of first connection wirings are formed in a layer identical to the pixel electrodes.

4. The thin film transistor substrate according to claim 1 , wherein the plurality of first connection wirings are formed in a layer identical to the common electrode.

5. The thin film transistor substrate according to claim 1 , wherein the plurality of first connection wirings are formed in a layer identical to a source-drain electrode of the thin film transistor.

6. The thin film transistor substrate according to claim 1 , wherein the shield electrode is formed in a layer identical to the plurality of dummy gate lead-out lines.

7. The thin film transistor substrate according to claim 1 , wherein the shield electrode is formed in a mesh shape.

8. The thin film transistor substrate according to claim 1 , wherein for the one first connection wiring, the first contact hole is made in at least two points of the dummy gate lead-out lines and on the shield electrode.

9. The thin film transistor substrate according to claim 1 , wherein the first contact hole is made in the other of the pair of long sides.

10. A display panel comprising:

the thin film transistor substrate according to claim 1 ; and

a counter substrate opposed to the thin film transistor substrate.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 18, 2023
From: PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.
To: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICA
Reel/Frame 064292/0775 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 6, 2020
From: TAKEDA, YUGO; HIRATA, MASAFUMI; IWATO, HIROAKI
To: PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.
Reel/Frame 052033/0677 →
Priority Claims (2)
JP JP2018-226609 · Dec 3, 2018 · national
JP JP2018-226784 · Dec 3, 2018 · national
Continuity (1)
Related Publication 20200176481A1 · Jun 4, 2020