MEMS structures and methods of forming MEMS structures
A MEMS structure may include a substrate, a first metal layer arranged over the substrate, an aluminum nitride layer at least partially arranged over the first metal layer and a second metal layer including one or more patterns arranged over the aluminum nitride layer. The first metal layer may include an electrode area configured for external electrical connection and one or more isolated areas configured to be electrically isolated from the electrode area and further configured to be electrically isolated from external electrical connection. Each pattern of the second metal layer may be arranged to at least partially overlap with one of the isolated area(s) of the first metal layer.
1. A microelectromechanical systems (MEMS) structure comprising:
a substrate;
a first metal layer arranged over the substrate, wherein the first metal layer comprises an electrode area configured for external electrical connection and one or more isolated areas configured to be electrically isolated from the electrode area and further configured to be electrically isolated from external electrical connection;
an aluminum nitride layer at least partially arranged over the first metal layer; and
a second metal layer comprising one or more patterns arranged over the aluminum nitride layer, wherein each of the one or more patterns is arranged to at least partially overlap with one of the one or more isolated areas;
wherein the aluminum nitride layer is separated from a bottom surface of the first metal layer.
2. The MEMS structure of claim 1 , wherein the MEMS structure comprises a first MEMS device including the electrode area, wherein the electrode area comprises a bottom electrode of the first MEMS device and the second metal layer further comprises a top electrode of the first MEMS device arranged over the bottom electrode.
3. The MEMS structure of claim 1 , further comprising:
an additional aluminum nitride layer; and
a third metal layer;
wherein the additional aluminum nitride layer and the third metal layer are arranged between the first metal layer and the substrate, wherein the additional aluminum nitride layer is arranged over the third metal layer; and
wherein the third metal layer comprises one or more isolated areas, at least one of the one or more isolated areas of the third metal layer at least partially overlapping with at least one of the one or more isolated areas of the first metal layer.
4. The MEMS structure of claim 3 , wherein the MEMS structure comprises a first MEMS device including the electrode area, wherein the electrode area comprises a bottom electrode of the first MEMS device and the second metal layer further comprises a top electrode of the first MEMS device arranged over the bottom electrode, wherein one of the one or more isolated areas of the third metal layer at least partially overlaps with at least one of the top electrode and the bottom electrode of the first MEMS device.
5. The MEMS structure of claim 1 , wherein at least one of the one or more isolated areas has a substantially uniform thickness.
6. The MEMS structure of claim 1 , wherein at least one of the one or more isolated areas comprises a pattern substantially similar to the pattern of the second metal layer at least partially overlapping with the isolated area.
7. The MEMS structure of claim 1 , wherein at least one of the one or more patterns of the second metal layer is arranged to completely overlap with one of the one or more isolated areas.
8. The MEMS structure of claim 2 , wherein the MEMS structure further comprises a second MEMS device including at least one of the one or more isolated areas, and wherein the second MEMS device is configured to perform a different function from the first MEMS device.
9. The MEMS structure of claim 2 , wherein the top electrode and the bottom electrode of the first MEMS device comprise substantially similar patterns.
10. The MEMS structure of claim 2 , wherein the first MEMS device comprises a piezoelectric device.
11. The MEMS structure of claim 1 , wherein the aluminum nitride layer comprises a material selected from a group comprising scandium, chromium, yttrium and combinations thereof.
12. The MEMS structure of claim 1 , wherein the aluminum nitride layer is arranged to extend between at least one of the one or more isolated areas and the electrode area.
13. A method of forming a MEMS structure, the method comprising:
providing a substrate;
forming a first metal layer over the substrate, wherein the first metal layer comprises an electrode area configured for external electrical connection and one or more isolated areas configured to be electrically isolated from the electrode area and further configured to be electrically isolated from external electrical connection;
forming an aluminum nitride layer at least partially over the first metal layer, wherein the aluminum nitride layer is separated from a bottom surface of the first metal layer; and
forming a second metal layer comprising one or more patterns over the aluminum nitride layer, wherein each of the one or more patterns is arranged to at least partially overlap with one of the one or more isolated areas.
14. The method of claim 13 , wherein forming the first metal layer over the substrate comprises:
depositing metal material over the substrate; and
etching the metal material to form the electrode area and the one or more isolated areas of the first metal layer.
15. The method of claim 14 , wherein etching the metal material comprises:
providing a mask over the metal material, wherein the mask comprises at least one opening to expose a portion of the metal material; and
removing the exposed portion of the metal material to form the electrode area and the one or more isolated areas of the first metal layer.
16. The method of claim 13 , further comprising:
forming a third metal layer over the substrate;
forming an additional aluminum nitride layer over the third metal layer;
wherein forming the first metal layer comprises forming the first metal layer over the additional aluminum nitride layer; and
wherein the third metal layer comprises one or more isolated areas, at least one of the one or more isolated areas of the third metal layer at least partially overlapping with at least one of the one or more isolated areas of the first metal layer.
17. The method of claim 13 , wherein the electrode area of the first metal layer comprises a bottom electrode of a first MEMS device and the method further comprises forming a top electrode of the first MEMS device on the second metal layer over the bottom electrode.
18. The method of claim 17 , wherein at least one of the one or more isolated areas is formed as part of a second MEMS device configured to perform a different function from the first MEMS device.
19. The method of claim 17 , wherein the first MEMS device comprises a piezoelectric device.
20. The method of claim 13 , wherein the aluminum nitride layer comprises a material selected from a group comprising scandium, chromium, yttrium and combinations thereof.