2D PEROVSKITE TANDEM PHOTOVOLTAIC DEVICES
A photovoltaic device includes a first electrode, a first photoactive material layer, one or more interfacial layers, a second photoactive material layer comprising a 2-D perovskite material having the formula (C′) a (C) b M n X 3n+1 and a second electrode. C′ is a bulky organic cation, C is a small organic or inorganic cation, M is a metal, X is a halide, a and b are real numbers, and n is an integer.
1 . A photovoltaic device comprising:
a first electrode;
a first photoactive material layer;
one or more interfacial layers;
a second photoactive material layer comprising a 2-D perovskite material having the formula (C′) a (C) b M n X 3n+1 , wherein C′ is a bulky organic cation, C is a small organic or inorganic cation, M is a metal, X is a halide, a and b are real numbers, and n is an integer; and
a second electrode.
2 . The photovoltaic device of claim 1 , wherein:
the first photoactive material layer is positioned between the first electrode and the interfacial layer;
the interfacial layer is positioned between the first photoactive material layer and the second photoactive material layer; and
the second photoactive material layer is positioned between the interfacial layer and the second electrode.
3 . The photovoltaic device of claim 1 , wherein the first photoactive material layer is selected from the group consisting of FAPbI3, FASnI3, MASnI3, CsSnI3, cadmium telluride, cadmium sulfide, cadmium selenide, copper indium gallium selenide, copper indium selenide, copper zinc tin sulfide, gallium arsenide, germanium, germanium indium phosphide, indium phosphide, lead sulfide, semiconducting polymers, polythiophenes, poly(3-hexylthiophene) (P3HT), polyheptadecanylcarbazole, dithienylbenzothiadiazole, Poly[[9-(1-octylnonyl)-9H-carb azole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT), polycyclopentadithiophene-benzothiadiazole, poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta [2,1-b;3,4-b′]dithiophene)-alt-4,7(2,1,3-benzothiadiazole)] (PCPDTBT), polybenzodithiophenyl-thienothiophenediyl, poly(triaryl amine) compounds, polyphenylene vinylenes, and combinations thereof.
4 . The photovoltaic device of claim 1 , wherein C′ is benzylammonium and C is cesium, methylammonium or formamidinium.
5 . The photovoltaic device of claim 1 , wherein C′ is phenylethylammonium and C is cesium, methylammonium or formamidinium.
6 . The photovoltaic device of claim 1 , wherein C′ is n-butylammonium and C is cesium, methylammonium or formamidinium.
7 . The photovoltaic device of claim 1 , wherein C′ is iminomethanediammonium and C is cesium, methylammonium or formamidinium.
8 . The photovoltaic device of claim 1 , wherein C′ is a cation of 4-(aminomethyl)piperidine and C is cesium, methylammonium or formamidinium.
9 . The photovoltaic device of claim 1 , wherein the first photoactive material layer comprises a material less than or equal to 200 microns thick.
10 . The photovoltaic device of claim 1 , wherein the first photoactive material layer comprises a material that is a patterned substrate.
11 . The photovoltaic device of claim 1 , wherein the first photoactive material layer comprises a material with an optical band gap of approximately 1.1 eV.
12 . The photovoltaic device of claim 1 , wherein the 2D perovskite material comprises repeating units of an inorganic metal halide sublattice comprising Pb, I, N, C, and H.
13 . The photovoltaic device of claim 12 , wherein an optical band gap value of the perovskite material decreases as the n value increases.
14 . The photovoltaic device of claim 12 , wherein the 2D perovskite material comprises no more than five repeating units of the inorganic halide sublattice.
15 . The photovoltaic device of claim 1 , wherein the second photoactive material layer comprises a material with an optical band gap between approximately 1.7 eV and 1.9 eV.
16 . A photovoltaic device comprising:
a first electrode;
an interfacial layer;
a second electrode;
a first photoactive material layer selected from the group consisting of perovskite, silicon, CdTe, CIGS, GaAs, InP, PbS, and Ge;
a second photoactive material layer comprising a 2-D perovskite material having the formula (C′) a (C) b M n X 3n+1 ;
wherein:
C′ is a bulky organic cation, C is a small organic or inorganic cation, M is a metal, X is a halide, a and b are real numbers, and n is an integer;
the first photoactive material is positioned between the first electrode and the interfacial layer; and
the second photoactive material layer is positioned between the interfacial layer and the second electrode.
17 . The photovoltaic device of claim 16 , wherein C′ is benzylammonium and C is cesium, methylammonium or formamidinium.
18 . The photovoltaic device of claim 16 , wherein C′ is phenylethylammonium and C is cesium, methylammonium or formamidinium.
19 . The photovoltaic device of claim 16 , wherein C′ is n-butylammonium and C is cesium, methylammonium or formamidinium.
20 . The photovoltaic device of claim 16 , wherein C′ is iminomethanediammonium and C is cesium, methylammonium or formamidinium.
21 . The photovoltaic device of claim 16 , wherein C′ is a cation 4-(aminomethyl)piperidine and C is cesium, methylammonium or formamidinium.
22 . The photovoltaic device of claim 16 , wherein the first photoactive material layer comprises a material with an optical band gap of approximately 1.1 eV.
23 . The photovoltaic device of claim 16 , wherein the second photoactive material layer comprises a material with an optical band gap between approximately 1.7 eV and 1.9 eV.
24 . The photovoltaic device of claim 16 , wherein the first photoactive material layer comprises a material less than 200 microns thick.
25 . The photovoltaic device of claim 16 , wherein the first photoactive material layer comprises a material that is a patterned substrate.
26 . (canceled)
27 . The photovoltaic device of claim 16 , wherein the 2D perovskite material comprises repeating units of an inorganic metal halide sublattice comprising Pb, I, N, C, and H.
28 . The photovoltaic device of claim 27 , wherein an optical band gap value of the perovskite material decreases as the n value increases.
29 . The photovoltaic device of claim 27 , wherein the 2-D perovskite material comprises no more than five repeating units of the inorganic halide sublattice.
30 . (canceled)