Nitride semiconductor laser device and semiconductor laser apparatus
A nitride semiconductor laser device at least includes a ridge part disposed on a second-conductivity-type semiconductor layer, a conductive oxide layer covering the upper surface of the ridge part and portions of opposite side surfaces of the ridge part, a dielectric layer covering a portion of the conductive oxide layer, and a first metal layer covering the conductive oxide layer and the dielectric layer, wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part is exposed through the dielectric layer and covered with the first metal layer.
1. A nitride semiconductor laser device comprising:
a substrate;
a first-conductivity-type semiconductor layer formed on the substrate;
a light-emitting layer disposed on the first-conductivity-type semiconductor layer;
a second-conductivity-type semiconductor layer disposed on the light-emitting layer;
a strip ridge part disposed in the second-conductivity-type semiconductor layer;
a conductive oxide layer disposed so as to cover an upper surface of the ridge part and portions of opposite side surfaces of the ridge part;
a dielectric layer disposed so as to cover a portion of the conductive oxide layer laying on the upper surface of the ridge part, and
a first metal layer disposed so as to cover the conductive oxide layer and the dielectric layer, wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part has an exposed portion exposed through the dielectric layer, and the exposed portion is covered with the first metal layer, and
wherein the conductive oxide layer is disposed so as to cover the upper surface of the ridge part, the opposite side surfaces of the ridge part, and a portion of an upper surface of the second-conductivity-type semiconductor layer disposed on at least one of lower-end opposite sides of the ridge part.
2. A nitride semiconductor laser device comprising:
a substrate;
a first-conductivity-type semiconductor layer formed on the substrate;
a light-emitting layer disposed on the first-conductivity-type semiconductor layer;
a second-conductivity-type semiconductor layer disposed on the light-emitting layer;
a strip ridge part disposed in the second-conductivity-type semiconductor layer;
a conductive oxide layer disposed so as to cover an upper surface of the ridge part and portions of opposite side surfaces of the ridge part;
a dielectric layer disposed so as to cover a portion of the conductive oxide layer laying on the upper surface of the ridge part, and
a first metal layer disposed so as to cover the conductive oxide layer and the dielectric layer,
wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part has an exposed portion exposed through the dielectric layer, and the exposed portion is covered with the first metal layer, and
wherein the conductive oxide layer is disposed so as to cover the upper surface of the ridge part, the opposite side surfaces of the ridge part, and portions of upper surfaces of the second-conductivity-type semiconductor layer positioned on lower-end opposite sides of the ridge part.
3. The nitride semiconductor laser device according to claim 2 ,
wherein portions of the conductive oxide layer that are disposed so as to cover the portions of the upper surfaces of the second-conductivity-type semiconductor layer positioned on the lower-end opposite sides of the ridge part have a width of 1.5 μm or less.
4. The nitride semiconductor laser device according to claim 2 ,
wherein the conductive oxide layer
has a refractive index higher than a refractive index of the dielectric layer, and
includes portions that are disposed so as to cover the portions of the upper surfaces of the second-conductivity-type semiconductor layer positioned on the lower-end opposite sides of the ridge part, and that have a width that is ⅕ or less of a width of the upper surface of the ridge part.
5. The nitride semiconductor laser device according to claim 2 ,
wherein the conductive oxide layer satisfies a relation of T 1 >T 2 or T 1 >T 3 ,
where T 1 represents a layer thickness of the portion disposed on the upper surface of the ridge part,
T 2 represents a layer thickness of portions disposed on the side surfaces of the ridge part, and
T 3 represents a layer thickness of portions disposed so as to cover the portions of the upper surfaces of the second-conductivity-type semiconductor layer positioned on the lower-end opposite sides of the ridge part.
6. A nitride semiconductor laser device comprising:
a substrate;
a first-conductivity-type semiconductor layer formed on the substrate;
a light-emitting layer disposed on the first-conductivity-type semiconductor layer;
a second-conductivity-type semiconductor layer disposed on the light-emitting layer;
a strip ridge part disposed in the second-conductivity-type semiconductor layer;
a conductive oxide layer disposed so as to cover an upper surface of the ridge part and portions of opposite side surfaces of the ridge part;
a dielectric layer disposed so as to cover a portion of the conductive oxide layer; and
a first metal layer disposed so as to cover the conductive oxide layer and the dielectric layer,
wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part has an exposed portion exposed through the dielectric layer, and the exposed portion is covered with the first metal layer, and
wherein the nitride semiconductor laser device further comprises a second metal layer disposed between and in contact with the second-conductivity-type semiconductor layer and the conductive oxide layer.
7. The nitride semiconductor laser device according to claim 6 ,
wherein the second metal layer contains palladium, nickel, or titanium.
8. The nitride semiconductor laser device according to claim 6 ,
wherein the second metal layer has a layer thickness of 1 nm or less.
9. A semiconductor laser apparatus comprising:
a nitride semiconductor laser device; and
a package sealing the nitride semiconductor laser device,
the nitride semiconductor laser device comprising:
a substrate;
a first-conductivity-type semiconductor layer formed on the substrate;
a light-emitting layer disposed on the first-conductivity-type semiconductor layer;
a second-conductivity-type semiconductor layer disposed on the light-emitting layer;
a strip ridge part disposed in the second-conductivity-type semiconductor layer;
a conductive oxide layer disposed so as to cover an upper surface of the ridge part and portions of opposite side surfaces of the ridge part;
a dielectric layer disposed so as to cover a portion of the conductive oxide layer; and
a first metal layer disposed so as to cover the conductive oxide layer and the dielectric layer,
wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part has an exposed portion exposed through the dielectric layer, and the exposed portion is covered with the first metal layer,
wherein, when a voltage of −15 V is applied to the nitride semiconductor laser device, a leakage current of 10 μA or more occurs.
10. The semiconductor laser apparatus according to claim 9 ,
wherein no protective devices are mounted within the package.