Light emitting device
The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.
1. A light-emitting device, comprising:
a light-emitting area comprising a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer; and
an electrode area comprising an external electrode structure surrounding the second semiconductor structure in a top view;
wherein the light-emitting area has a shape of circle or polygon in the top view, and when the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength; when the second semiconductor structure is driven by a second current, the second active layer of the second semiconductor structure can emit a second light with a second main wavelength.
2. The light-emitting device of claim 1 , wherein the light-emitting area is substantially arranged in a center of the light-emitting device.
3. The light-emitting device of claim 1 , wherein the external electrode structure includes a bonding pad.
4. The light-emitting device of claim 1 , further comprising a reflective layer under the light-emitting area.
5. The light-emitting device of claim 1 , further comprising an extension electrode disposed on the second semiconductor structure.
6. The light-emitting device of claim 5 , wherein the extension electrode has a circular shape.
7. The light-emitting device of claim 5 , further comprising a contact layer between the extension electrode and the second semiconductor structure.
8. The light-emitting device of claim 7 , wherein the contact layer has a shape substantially the same as the extension electrode.
9. A light-emitting device, comprising:
a light-emitting stack comprising a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer;
a first electrode structure having a first bonding pad and a first extension electrode on the first semiconductor structure; and
a second electrode structure having a second bonding pad and a second extension electrode on the second semiconductor structure;
wherein the second extension electrode surrounds the first extension electrode in a top view, when the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength; when the second semiconductor structure is driven by a second current, the second active layer of the second semiconductor structure can emit a second light with a second main wavelength.
10. The light-emitting device of claim 9 , wherein the first extension electrode and the second extension electrode respectively have a circular shape in a top view.
11. The light-emitting device of claim 9 , further comprising a first contact layer between the first extension electrode and the first semiconductor structure.
12. The light-emitting device of claim 11 , wherein the first contact layer has a shape substantially the same as the first extension electrode.
13. The light-emitting device of claim 9 , wherein the first extension electrode has a first top surface, the second extension electrode has a second top surface, and a height difference is between the first top surface and the second top surface.
14. The light-emitting device of claim 9 , further comprising a second contact layer between the second extension electrode and the second semiconductor structure.
15. The light-emitting device of claim 14 , wherein the second contact layer has a shape substantially the same as the second extension electrode.
16. A light-emitting device, comprising:
a light-emitting stack comprising a first-type conductivity semiconductor layer, a second-type conductivity semiconductor layer, and an active layer disposed between the first-type conductivity semiconductor layer and a second-type conductivity semiconductor layer;
a first electrode on the second-type conductivity semiconductor layer; and
a light-absorbing layer on the first electrode;
wherein the second-type conductivity semiconductor layer has a side wall and a top surface having a first region and a second region, the light-absorbing layer covers the side wall and the first region, and the first electrode and the light-absorbing layer are not overlapped with the second region in a cross-sectional view of the light-emitting device.
17. The light-emitting device of claim 16 , wherein the light-absorbing layer comprises a bonding pad.
18. The light-emitting device of claim 16 , further comprising an insulation layer between the light-absorbing layer and the light-emitting stack.
19. The light-emitting device of claim 18 , wherein the insulation layer is in physical contact with the side wall and a portion of the top surface.
20. The light-emitting device of claim 16 , further comprising a reflective layer under the light-emitting stack.