Multi-faced molded semiconductor package and related methods
Implementations of a method of forming a semiconductor package may include forming electrical contacts on a first side of a wafer, applying a photoresist layer to the first side of the wafer, patterning the photoresist layer, and etching notches into the first side of the wafer using the photoresist layer. The method may include applying a first mold compound into the notches and over the first side of the wafer, grinding a second side of the wafer opposite the first side of the wafer to the notches formed in the first side of the wafer, applying one of a second mold compound and a laminate resin to a second side of the wafer, and singulating the wafer into semiconductor packages. Six sides of a die included in each semiconductor package may be covered by one of the first mold compound, the second mold compound, and the laminate resin.
1. A semiconductor package, comprising:
a die comprising a first side, a second side, a third side, a fourth side, a fifth side, and a sixth side, the first side of the die comprising a plurality of electrical contacts;
a first mold compound covering the first side of the die, the second side of the die, the third side of the die, the fourth side of the die, and the fifth side of the die, wherein the plurality of electrical contacts extend through a plurality of openings in the first mold compound;
a passivation layer directly coupled to the first side of the die;
a polyimide layer coupled between the passivation layer and the first mold compound; and
one of a second mold compound or a laminate resin covering the sixth side of the die.
2. The package of claim 1 , wherein the sixth side opposes the first side.
3. The package of claim 1 , wherein a perimeter of the first side of the die comprises one of an octagon or a rounded rectangle.
4. The package of claim 1 , wherein the first mold compound is anchored to the second side of the die, the third side of the die, the fourth side of the die, and the fifth side of the die through a plurality of ridges formed in the second side of the die, the third side of the die, the fourth side of the die, and the fifth side of the die.
5. The package of claim 1 , wherein the plurality of electrical contacts comprise one of a combination of nickel, gold, an aluminum or a combination of tin, silver, and copper.
6. The package of claim 1 , wherein the passivation layer is covered by the first mold compound.
7. The package of claim 1 , further comprising a second passivation layer coupled over the first side of the die.
8. The semiconductor package of claim 1 , wherein the first mold compound is directly coupled to a substrate material of the die.
9. The semiconductor package of claim 1 , wherein an entirety of the first mold compound is formed from a single and continuous material.
10. A semiconductor package, comprising:
a die comprising a first side, a second side, a third side, a fourth side, a fifth side, and a sixth side, the first side of the die comprising a plurality of electrical contacts;
a first mold compound covering the first side of the die, the second side of the die, the third side of the die, the fourth side of the die, and the fifth side of the die, wherein the plurality of electrical contacts extend through a plurality of openings in the first mold compound;
a first passivation layer coupled over the first side of the die;
a second passivation layer coupled over the first passivation layer;
a polyimide layer coupled over the second passivation layer; and
one of a second mold compound or a laminate resin covering the sixth side of the die.
11. The package of claim 10 , wherein the sixth side opposes the first side.
12. The package of claim 10 , wherein a perimeter of the first side of the die comprises one of an octagon or a rounded rectangle.
13. The package of claim 10 , wherein the first mold compound is anchored to the second side of the die, the third side of the die, the fourth side of the die, and the fifth side of the die through a plurality of ridges formed in the second side of the die, the third side of the die, the fourth side of the die, and the fifth side of the die.
14. The package of claim 10 , wherein the plurality of electrical contacts comprise one of a combination of nickel, gold, and aluminum or a combination of tin, silver, and copper.
15. The package of claim 10 , wherein the polyimide layer is covered by the first mold compound.
16. The semiconductor package of claim 10 , wherein the first mold compound is directly coupled to a substrate material of the die.
17. The semiconductor package of claim 10 , wherein the second passivation layer is directly coupled to the first passivation layer.
18. A semiconductor package, comprising:
a die comprising a first side, a second side, a third side, a fourth side, a fifth side, and a sixth side, the first side of the die comprising a plurality of electrical contacts;
a first mold compound covering the first side of the die, the second side of the die, the third side of the die, the fourth side of the die, and the fifth side of the die, wherein the plurality of electrical contacts extend through a plurality of openings in the first mold compound;
a passivation layer coupled over the first side of the die;
a solder resist layer coupled over the passivation layer; and
one of a second mold compound or a laminate resin covering the sixth side of the die.
19. The semiconductor package of claim 18 , wherein the first mold compound is directly coupled to a substrate material of the die.
20. The semiconductor package of claim 18 , wherein the solder resist layer is directly coupled to the passivation layer.