Semiconductor device and method of producing semiconductor device
A semiconductor device includes a mounting substrate; a first wiring electrode and a second wiring electrode disposed on a main surface of a mounting substrate; an interposing member disposed between the first wiring electrode and the second wiring electrode; a semiconductor element flip-chip connected with the first wiring electrode and the second wiring electrode via a first electrical connection member and a second electrical connection member so as to at least partially overlap the interposing member in a top surface view; and a resin disposed in contact with the semiconductor element and the mounting substrate. The wettability of the interposing member to the resin is higher than that of the mounting substrate to the resin. The resin is disposed in contact with the semiconductor element and the interposing member.
1. A semiconductor device, comprising:
a mounting substrate;
a first wiring electrode, a second wiring electrode, and an interposing member disposed between the first wiring electrode and the second wiring electrode, the first wiring electrode, the second wiring electrode, and the interposing member being disposed on a main surface of the mounting substrate;
a semiconductor element which is flip-chip connected with the first wiring electrode and the second wiring electrode via a first electrical connection member and a second electrical connection member, and at least partially overlaps the interposing member in a top surface view; and
a resin disposed in contact with the semiconductor element and the mounting substrate,
wherein wettability of the interposing member to the resin is higher than wettability of the mounting substrate to the resin, and
the resin is disposed in contact with the semiconductor element and the interposing member.
2. The semiconductor device according to claim 1 ,
wherein the interposing member is elongated, and includes, on a surface of the interposing member facing the semiconductor element, an uneven portion having at least one projection projecting toward the semiconductor element, and
the at least one projection extends along a longitudinal direction of the interposing member.
3. The semiconductor device according to claim 1 , wherein the interposing member is spaced from the first wiring electrode and the second wiring electrode.
4. The semiconductor device according to claim 3 , wherein the first wiring electrode, the second wiring electrode, and the interposing member are made of a same material.
5. The semiconductor device according to claim 1 , wherein the interposing member includes an extension located outside the semiconductor element in a top surface view.
6. The semiconductor device according to claim 5 , wherein the extension includes a wide portion having a width larger than a distance of a space between the first wiring electrode and the second wiring electrode in a top surface view.
7. The semiconductor device according to claim 1 ,
wherein the main surface of the mounting substrate is formed from one selected from a group consisting of AlN, Al 2 O 3 , BeO, SiC, SiO 2 , and Si 3 N 4 ,
the interposing member has a surface formed from one selected from a group consisting of Au, Al, and Cu, and
the resin contains at least one selected from a group consisting of silicone resins and epoxy resins.