Organic electroluminescent device and an organic electroluminescent apparatus
An organic electroluminescent device and an organic electroluminescent apparatus are disclosed. The organic electroluminescent device includes a first electrode layer, a first carrier functional layer, a light-emitting layer and a second electrode layer stacked in sequence, wherein a P-doped layer is arranged between the first carrier functional layer and the light-emitting layer. Thus the energy level bending of an interface between the first carrier functional layer and the light-emitting layer is modified, and the hole injection potential barrier at the interface between the two is reduced, thereby effectively reducing the turn-on voltage of the organic electroluminescent device.
1. An organic electroluminescent device, comprising a first electrode layer, a first carrier functional layer, a light-emitting layer and a second electrode layer stacked in sequence, wherein the first carrier functional layer is an electron blocking layer, and a P-doped layer is arranged between the electron blocking layer and the light-emitting layer,
wherein the light-emitting layer is a blue light emitting layer, the electron blocking layer is doped with a material in the blue light emitting layer, and the P-doped layer is in direct contact with the blue light emitting layer,
wherein a second carrier functional layer is disposed between the light-emitting layer and the second electrode layer, the second carrier functional layer is a hole blocking layer, and an N-doped layer is arranged between the hole blocking layer and the light emitting layer, wherein the N-doped layer is in direct contact with the light emitting layer.
2. The organic electroluminescent device according to claim 1 , wherein the P-doped layer comprises a first matrix material and a first doping material, and the first matrix material is identical to a material of the electron blocking layer.
3. The organic electroluminescent device according to claim 2 , wherein the first doping material is a P-dopant, the P-dopant is at least one selected from NDP-9 and PPDN.
4. The organic electroluminescent device according to claim 3 , wherein the P-dopant in the P-doped layer has a doping concentration of 0.1 wt % to 10 wt %.
5. The organic electroluminescent device according to claim 3 , wherein the P-dopant in the P-doped layer has a doping concentration of 1 wt % to 5 wt %.
6. The organic electroluminescent device according to claim 1 , wherein the P-doped layer has a thickness of 0.5 nm to 10 nm.
7. The organic electroluminescent device according to claim 1 , wherein the N-doped layer comprises a second matrix material and a second doping material, the second matrix material is identical to a material of the hole blocking layer.
8. The organic electroluminescent device according to claim 7 , wherein the second doping material is an N-dopant.
9. The organic electroluminescent device according to claim 2 , wherein the P-doped layer is formed by evaporation-coating the first doping material together with the first matrix material, or by premixing the first doping material with the first matrix material and then performing an inkjet printing process.
10. An organic electroluminescent apparatus, comprising a plurality of pixel units arranged in an array, wherein each of the pixel units comprises a red light sub-pixel unit, a green light sub-pixel unit and a blue light sub-pixel unit, and each of the sub-pixel units comprises a first electrode layer, a light-emitting layer and a second electrode layer stacked in sequence, and the light-emitting layers in the red light sub-pixel unit, the green light sub-pixel unit and the blue light sub-pixel unit are respectively a red light emitting layer, a green light emitting layer and a blue light emitting layer;
wherein the blue light sub-pixel unit comprises a first electrode layer, a first carrier functional layer, a blue light emitting layer, and a second electrode layer stacked in sequence, the first carrier functional layer is an electron blocking layer, and a P-doped layer is arranged between the electron blocking layer and the blue light emitting layer of the blue light sub-pixel unit,
wherein the electron blocking layer is doped with a material in the blue light emitting layer, and the P-doped layer is in direct contact with the blue light emitting layer,
wherein a second carrier functional layer is disposed between the blue light-emitting layer and the second electrode layer, the second carrier functional layer is a hole blocking layer, and an N-doped layer is arranged between the hole blocking layer and the blue light emitting layer, wherein the N-doped layer is in direct contact with the blue light emitting layer.
11. The organic electroluminescent apparatus according to claim 10 , wherein a turn-on voltage difference between the blue light sub-pixel unit and the red light sub-pixel unit is not more than 0.2V, and a turn-on voltage difference between the blue light sub-pixel unit and the green light sub-pixel unit is not more than 0.2V.
12. The organic electroluminescent apparatus according to claim 10 , wherein the P-doped layer has a doping concentration of 0.1 wt % to 10 wt %.
13. The organic electroluminescent apparatus according to claim 10 , wherein the P-doped layer has a doping concentration of 1 wt % to 5 wt %.
14. The organic electroluminescent apparatus according to claim 10 , wherein the P-doped layer has a thickness of 0.5 nm to 10 nm.
15. The organic electroluminescent apparatus according to claim 10 , wherein the N-doped layer comprises a second matrix material and a second doping material, the second matrix material is identical to a material of the hole blocking layer.