Method of fabricating anisotropic optical interference filter
In a method of manufacturing a one-dimensionally varying optical filter, a substrate is coated to form a stack of layers of two or more different types. The coating may, for example, employ sputtering, electron-beam evaporation, or thermal evaporation. During the coating, the time-averaged deposition rate is varied along an optical gradient direction by generating reciprocation between a shadow mask and the substrate in a reciprocation direction that is transverse to the optical gradient direction. In some approaches, the shadow mask is periodic with a mask period defined along the direction of reciprocation, and the generated reciprocation has a stroke equal to or greater than the mask period along the direction of reciprocation. The substrate and the shadow mask may also be rotated together as a unit during the coating. Also disclosed are one-dimensionally varying optical filters, such as linear variable filters, made by such methods.
1. A deposition apparatus for depositing a coating material onto an associated substrate, the deposition apparatus comprising:
a substrate holder configured to hold the associated substrate;
at least one deposition source arranged to emit a deposition beam onto the associated substrate held by the substrate holder;
a shadow mask wafer interposed between the at least one deposition source and the substrate holder such that the deposition beam passes through the shadow mask wafer before impinging onto the associated substrate; and
a reciprocation mechanism configured to generate reciprocation between the shadow mask wafer and the substrate holder in a direction of reciprocation while the at least one deposition source emits the deposition beam to apply the coating material onto the associated substrate to create a one-dimensional varying optical filter, wherein the reciprocation mechanism includes:
an actuator arm extending from the substrate holder and connecting with and reciprocating the shadow mask wafer,
a support arm that supports an end of the shadow mask wafer distal from the shadow mask wafer connection with the actuator arm, and
a rotation mechanism that includes a shaft, wherein the rotation mechanism is configured to rotate the substrate holder and the shadow mask wafer together as a unit about the shaft as the reciprocation mechanism generates the reciprocation.
2. The deposition apparatus of claim 1 wherein the substrate holder and the shadow mask wafer constitute a planet of a planetary configuration, the planetary configuration comprising a plurality of planets and a planetary rotation axis, wherein the plurality of planets is configured to rotate about the planetary rotation axis.
3. The deposition apparatus of claim 1 wherein one of:
(i) the reciprocation mechanism is configured to generate reciprocation of the shadow mask wafer respective to the substrate holder, or
(ii) the reciprocation mechanism is configured to generate reciprocation of the substrate holder respective to the shadow mask wafer.
4. The deposition apparatus of claim 1 further comprising:
a vacuum chamber containing the substrate holder, the shadow mask wafer, and the reciprocation mechanism.
5. The deposition apparatus of claim 1 further comprising:
a chamber containing the substrate holder, the shadow mask wafer, and the reciprocation mechanism and providing a controlled ambient composition and pressure.
6. The deposition apparatus of claim 1 wherein the at least one deposition source includes at least one thermal evaporation source comprising a resistive heater or an electron beam.
7. The deposition apparatus of claim 1 wherein the at least one deposition source includes at least one sputtering source.
8. The deposition apparatus of claim 1 wherein the substrate holder includes a substrate heater to control temperature of the substrate held by the substrate holder.
9. The deposition apparatus of claim 1 wherein the shadow mask wafer includes or holds at least one shadow mask that has a plurality of openings, each opening having a width in the direction of reciprocation that varies along a direction transverse to the direction of reciprocation.
10. The deposition apparatus of claim 9 wherein the width in the direction of reciprocation varies linearly along the direction transverse to the direction of reciprocation.
11. The deposition apparatus of claim 9 wherein the shadow mask wafer includes or holds a plurality of shadow masks.
12. A deposition apparatus for depositing a stack of coating material layers of two or more different types onto an associated substrate, the deposition apparatus comprising:
a substrate holder configured to hold the associated substrate;
at least one deposition source arranged to emit a deposition beam onto the associated substrate held by the substrate holder;
a shadow mask wafer interposed between the at least one deposition source and the substrate holder such that the deposition beam passes through the shadow mask wafer before impinging onto the associated substrate;
a reciprocation mechanism configured to generate reciprocation between the shadow mask wafer and the substrate holder in a direction of reciprocation while the at least one deposition source emits the deposition beam to create the stack of coating material layers of two or more different types onto the associated substrate which forms a one-dimensionally varying optical filter, wherein the reciprocation mechanism includes:
an actuator arm extending from the substrate holder and connecting with and reciprocating the shadow mask wafer; and
a rotation mechanism that includes a shaft, wherein the rotation mechanism is configured to rotate the substrate holder and the shadow mask wafer together as a unit about the shaft as the reciprocation mechanism generates the reciprocation.
13. The deposition apparatus of claim 12 wherein one of:
(i) the reciprocation mechanism is configured to generate reciprocation of the shadow mask wafer respective to the substrate holder, or
(ii) the reciprocation mechanism is configured to generate reciprocation of the substrate holder respective to the shadow mask wafer.
14. The deposition apparatus of claim 12 wherein the reciprocation mechanism further comprises a support arm that supports an end of the shadow mask wafer distal from the shadow mask wafer connection with the actuator arm.
15. The deposition apparatus of claim 12 further comprising:
a chamber containing the substrate holder, the shadow mask wafer, and the reciprocation mechanism and providing a controlled ambient composition and pressure.
16. The deposition apparatus of claim 12 wherein the at least one deposition source includes at least one thermal evaporation source comprising a resistive heater or an electron beam or at least one sputtering source.
17. The deposition apparatus of claim 12 wherein the shadow mask wafer includes or holds at least one shadow mask that has a plurality of openings, each opening having a width in the direction of reciprocation that varies along a direction transverse to the direction of reciprocation.
18. The deposition apparatus of claim 17 wherein the width in the direction of reciprocation varies linearly along the direction transverse to the direction of reciprocation.
19. The deposition apparatus of claim 12 wherein the at least one deposition source is located off-center.