IP Library Granted Patent US 10,896,810
Granted Patent B2
US 10,896,810 · App. 16/715,687 · Granted Jan 19, 2021

RF generating apparatus and plasma treatment apparatus

Inventors: Yoshiyuki Oshida (Tokyo, JP); Naoya Fujimoto (Tokyo, JP); Norikazu Kato (Tokyo, JP); Takeshi Okada (Tokyo, JP); Tsuyoshi Takeda (Toyama, JP)
Assignee: HITACHI KOKUSAI ELECTRIC INC.
H01J37/32183H01J37/3211H01J2237/327
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Quick Facts
Patent No.
US 10,896,810
App. No.
16/715,687
Granted
Jan 19, 2021
Kind
B2
Abstract

To provide a RF generating apparatus that enables apparatus size to be decreased and the cost reduced thereby while also improving power efficiency by performing a stable matching operation, and to provide a plasma treatment apparatus using said apparatus. This RF generating apparatus comprises a plurality of RF generators and matching units, the matching units being provided with only variable-capacity capacitors connected in parallel, thereby reducing the number of elements in terms of the variable-capacity capacitors. A matching calculation section for the RF generators determines, on the basis of traveling waves and reflection waves detected by a detection circuit, the capacity values of the variable-capacity capacitors for the matching units, while adjusting and determining the oscillation frequencies for oscillation circuits in the RF generators so as to decrease the level of the reflection waves. The plasma treatment apparatus uses this RF generating apparatus.

Claims (28)

1. A RF generating apparatus configured to supply RF power, comprising:

a plurality of RF generators which generate RF power different in frequency; a plurality of antennas installed inside a plasma reactor; and a plurality of matching boxes connected to the antennas to match outputs of the RF generators with one another,

each of the RF generators including: an oscillator circuit which oscillates a RF wave having a set oscillation frequency; an arithmetic circuit which calculates a reflected power level and a reflection coefficient from a forward power and a reflected power detected; and a matching arithmetic unit which performs an operation for calculating, based on the reflection coefficient, a control value for the matching box and a candidate value for the oscillation frequency to make the reflected power level small, wherein

based on the candidate value for the oscillation frequency, the matching arithmetic unit determines the oscillation frequency to be such a value as to secure a specific frequency difference from an oscillation frequency in any other RF generator and sets the oscillation frequency in the oscillator circuit, and

the arithmetic circuit includes a band-pass filter having a bandwidth which is twice the specific frequency difference and sets a center frequency of a passband of the band-pass filter as the set oscillation frequency.

2. The RF generating apparatus according to claim 1 , wherein when the specific frequency difference from the oscillation frequency in any other RF generator cannot be secured, the matching arithmetic unit repeats the oscillation frequency operation and forcibly determines such an oscillation frequency as to secure the specific frequency difference after the operation is performed a specific number of times and sets the oscillation frequency in the oscillator circuit.

3. The RF generating apparatus according to claim 1 , wherein the plurality of antennas are connected to the matching boxes, respectively.

4. A plasma treatment apparatus using the RF generating apparatus according to claim 1 .

5. A RF generating apparatus configured to supply RF power, comprising:

a plurality of RF generators which generate RF power different in frequency; a plurality of antennas installed inside a plasma reactor; and a plurality of matching boxes connected to the antennas to match outputs of the RF generators with one another,

each of the RF generators including: an oscillator circuit which oscillates a RF wave having a set oscillation frequency; an arithmetic circuit which calculates a reflected power level and a reflection coefficient from a forward power and a reflected power detected; and a matching arithmetic unit which performs an operation for calculating, based on the reflection coefficient, a control value for the matching box and a candidate value for the oscillation frequency to make the reflected power level small, wherein

based on the candidate value for the oscillation frequency, the matching arithmetic unit determines the oscillation frequency to be such a value as to secure a specific frequency difference from an oscillation frequency in any other RF generator and sets the oscillation frequency in the oscillator circuit, and

the arithmetic circuit includes such a low-pass filter as to let a band lower than a cut-off frequency through and sets the cut-off frequency as a frequency obtained by adding the specific frequency difference to the set oscillation frequency.

6. The RF generating apparatus according to claim 5 , wherein when the specific frequency difference from the oscillation frequency in any other RF generator cannot be secured, the matching arithmetic unit repeats the oscillation frequency operation and forcibly determines such an oscillation frequency as to secure the specific frequency difference after the operation is performed a specific number of times and sets the oscillation frequency in the oscillator circuit.

7. The RF generating apparatus according to claim 5 , wherein the plurality of antennas are connected to the matching boxes, respectively.

8. A plasma treatment apparatus using the RF generating apparatus according to claim 5 .

9. A RF generating apparatus configured to supply RF power, comprising:

a plurality of RF generators which generate RF power different in frequency; a plurality of antennas installed inside a plasma reactor; and a plurality of matching boxes connected to the antennas to match outputs of the RF generators with one another,

each of the RF generators including: an oscillator circuit which oscillates a RF wave having a set oscillation frequency; an arithmetic circuit which calculates a reflected power level and a reflection coefficient from a forward power and a reflected power detected; and a matching arithmetic unit which performs an operation for calculating, based on the reflection coefficient, a control value for the matching box and a candidate value for the oscillation frequency to make the reflected power level small, and

the RF generating apparatus further comprising an upper apparatus connected to the plurality of RF generators, wherein

based on the candidate value for the oscillation frequency, the upper apparatus determines the oscillation frequency to be such a value as to secure a specific frequency difference from an oscillation frequency in any other RF generator and sets the oscillation frequency in the oscillator circuit.

10. The RF generating apparatus according to claim 9 , wherein the arithmetic circuit includes a band-pass filter having a bandwidth which is twice the specific frequency difference and sets a center frequency of a passband of the band-pass filter as the set oscillation frequency.

11. The RF generating apparatus according to claim 9 , wherein the arithmetic circuit includes such a low-pass filter as to let a band lower than a cut-off frequency through and sets the cut-off frequency as a frequency obtained by adding the specific frequency difference to the set oscillation frequency.

12. The RF generating apparatus according to claim 9 , wherein when the specific frequency difference from the oscillation frequency in any other RF generator cannot be secured, the upper apparatus causes the matching arithmetic unit to repeat the oscillation frequency operation and forcibly determines such an oscillation frequency as to secure the specific frequency difference after the operation is performed a specific number of times and sets the oscillation frequency in the oscillator circuit.

13. The RF generating apparatus according to claim 10 , wherein when the specific frequency difference from the oscillation frequency in any other RF generator cannot be secured, the upper apparatus causes the matching arithmetic unit to repeat the oscillation frequency operation and forcibly determines such an oscillation frequency as to secure the specific frequency difference after the operation is performed a specific number of times and sets the oscillation frequency in the oscillator circuit.

14. The RF generating apparatus according to claim 11 , wherein when the specific frequency difference from the oscillation frequency in any other RF generator cannot be secured, the upper apparatus causes the matching arithmetic unit to repeat the oscillation frequency operation and forcibly determines such an oscillation frequency as to secure the specific frequency difference after the operation is performed a specific number of times and sets the oscillation frequency in the oscillator circuit.

15. The RF generating apparatus according to claim 9 , wherein the plurality of antennas are connected to the matching boxes, respectively.

16. A plasma treatment apparatus using the RF generating apparatus according to claim 9 .

Assignments (3)
CHANGE OF ADDRESS Recorded May 15, 2025
From: HITACHI KOKUSAI ELECTRIC INC.
To: HITACHI KOKUSAI ELECTRIC INC.
Reel/Frame 071275/0058 →
CHANGE OF NAME Recorded May 15, 2025
From: HITACHI KOKUSAI ELECTRIC INC.
To: KOKUSAI DENKI ELECTRIC INC.
Reel/Frame 071275/0236 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 9, 2020
From: OSHIDA, YOSHIYUKI; FUJIMOTO, NAOYA; KATO, NORIKAZU; OKADA, TAKESHI; TAKEDA, TSUYOSHI
To: HITACHI KOKUSAI ELECTRIC INC.
Reel/Frame 051463/0929 →
Continuity (2)
Continuation PCTJP2017023767 · Jun 28, 2017
Related Publication 20200118797A1 · Apr 16, 2020