High temperature and high pressure AlGaN/GaN electronics
Disclosed herein are devices, systems and methods useful for downhole sensors and electronics suitable for harsh thermal and mechanical environment associated with high-temperature geothermal drilling and high-temperature/high-pressure oil and gas drilling.
1. A device comprising a transistor capable of operating from 250° C. to 400° C. and at pressures greater than 20,000 psi.
2. The device of claim 1 capable of operating while experiencing a mechanical shear force of up to 100×g.
3. The device of claim 1 capable of making measurements comprising wellbore azimuth, wellbore inclination, gravity toolface, magnetic toolface, vibration monitoring, along-string measurements, downhole weight, downhole torque, and gamma-ray detection.
4. The device of claim 1 wherein the transistor comprises AlGaN/GaN.
5. The device of claim 1 wherein the transistor comprises Ga 2 O 3 /GaN.
6. The device of claim 1 wherein the transistor comprises SiC/GaN.
7. The device of claim 1 wherein the transistor comprises a heterostructure field-effect transistor or a double-heterostructure field-effect transistor.
8. The device of claim 1 wherein the transistor is capable of exhibiting breakdown voltages of greater than one kilovolt.