Light emitting diode (LED) devices with high density textures
Light emitting diode (LED) devices comprise: a patterned substrate comprising a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features; a selective layer comprising a dielectric material located on the surfaces of the integral features, wherein there is an absence of the selective layer on the base surface; and a III-nitride layer comprising a III-nitride material on the selective layer and the base surface.
1. A light emitting diode (LED) device comprising:
a patterned substrate comprising a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features;
a conformal nucleation layer comprising a nucleation material directly on the plurality of integral features and directly on the base surface, the nucleation material comprising one or more of aluminum nitride (AlN), gallium nitride (GaN), and aluminum gallium nitride (AlGaN);
a selective layer comprising a dielectric material located on the nucleation layer, wherein there is an absence of the selective layer on the nucleation layer on the base surface in the spaces between the plurality of integral features; and
a III-nitride layer comprising a III-nitride material on the selective layer and directly on the nucleation layer on the base surface in the spaces between the plurality of integral features.
2. The LED device of claim 1 , wherein the selective layer is located on all portions of surfaces of the integral features.
3. The LED device of claim 1 , wherein the absence of the selective layer is for all portions of the base surface.
4. The LED device of claim 1 , wherein the III-nitride material comprises: gallium (Ga), aluminum (Al), indium (In), or combinations thereof.
5. The LED device of claim 1 , wherein the dielectric material comprises a low refractive index material having a refractive index in a range of about 1.2 to about 2.
6. The LED device of claim 5 , wherein the dielectric material comprises: silicon dioxide, (SiO 2 ), silicon nitride (Si 3 N 4 ), or combinations thereof.
7. The LED device of claim 1 , wherein the selective layer has a thickness in a range of 20 nm to 400 nm.
8. The LED device of claim 1 , wherein the plurality of integral features has a shape selected from: a hemispherical shape, a triangular pyramidal shape, a quadrangular pyramidal shape, a hexagonal pyramid shape, a conical shape, a semi-spherical shape, and a cut-spherical shape.
9. The LED device of claim 1 , wherein the substrate comprises a material of: sapphire, spinel, zinc oxide (ZnO), magnesium oxide (MgO), or combinations thereof.
10. A light emitting diode (LED) device comprising:
a patterned sapphire substrate comprising a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features;
a conformal nucleation layer directly on the surfaces of the integral features and directly on the base surface, the conformal nucleation layer comprising one or more of aluminum nitride (AlN), gallium nitride (GaN), and aluminum gallium nitride (AlGaN);
a selective layer on the conformal nucleation layer, the selective layer comprising a dielectric material of silicon dioxide located above the integral features, wherein there is an absence of the selective layer above the base surface, the selective layer having a thickness in a range of 20 nm to 200 nm; and
a III-nitride layer comprising a gallium nitride (GaN) material on the selective layer and the base surface.
11. The LED device of claim 10 , wherein the selective layer is located on all portions of surfaces of the integral features.
12. The LED device of claim 10 , wherein the absence of the selective layer is for all portions of the base surface.
13. A method of manufacturing comprising:
depositing a nucleation layer directly onto a patterned substrate that comprises: a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features, the nucleation layer comprising one or more of aluminum nitride (AlN), gallium nitride (GaN), and aluminum gallium nitride (AlGaN);
creating a selective layer comprising a dielectric material on the patterned substrate, the selective layer located on surfaces of the plurality of integral features, wherein there is an absence of the selective layer on the base surface thereby making a selective layer-coated substrate; and
epitaxially growing a III-nitride layer on the selective layer-coated substrate.
14. The method of claim 13 , wherein the selective layer is created by depositing the dielectric material onto the patterned substrate by a directional deposition process that is selective to deposition on the surfaces of the plurality of integral features; and thereafter etching to remove any dielectric material from the base surface.
15. The method of claim 13 , wherein the selective layer is created by depositing the dielectric material onto the patterned substrate by: sputter deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma enhanced atomic layer deposition (PEALD), plasma enhanced chemical vapor deposition (PECVD), or combinations thereof; and thereafter selectively etching the dielectric material from the base surface preferentially over the surfaces of the integral features.
16. The method of claim 13 , wherein the selective layer is on all portions of surfaces of the integral features.
17. The method of claim 13 , wherein the absence of the selective layer is for all portions of the base surface.