Direct gas fluorination of boron nitrides and compositions including fluorinated boron nitrides
A method for producing fluorinated boron nitride involves heating a reactor chamber, providing boron nitride in the reactor chamber, flowing fluorine and an inert gas through the reactor chamber, and exposing the boron nitride to the flowing gases and the heat. The method may include boron nitride that is exfoliated or non-exfoliated. The fluorinated boron nitride that is produced from this method may have a hexagonal crystal structure or a cubic crystal structure. The method may additionally comprise removing the fluorinated boron nitride from the reactor chamber and mixing it with a surfactant. A suspension may comprise particles of fluorinated boron nitride suspended in a fluid, which may be polar or non-polar, and may additionally include a surfactant. The fluorinated boron nitride may have a hexagonal or a cubic crystal structure. Furthermore, the boron nitride may be exfoliated or non-exfoliated.
1. A method for producing fluorinated boron nitride, comprising:
heating a reactor chamber to a temperature of at least 20° C.;
providing boron nitride within the reactor chamber;
flowing a gas through the reactor chamber, the gas comprising fluorine and an inert gas, wherein fluorine comprises not more than 50% of the gas; and
exposing the boron nitride to the flowing gas at the temperature of at least 20° C. in the reactor chamber.
2. The method of claim 1 , wherein further comprising selecting the boron nitride to comprise boron nitride powder, the boron nitride powder including particles having an average particle size in a range extending from 70 nanometers to 45 micrometers.
3. The method of claim 1 , wherein further comprising exposing the boron nitride to the flowing gas at the temperature of at least 20° C. in the reactor chamber for at least 1 hour.
4. The method of claim 1 , further comprising selecting the inert gas from among helium and nitrogen.
5. The method of claim 1 , wherein the boron nitride comprises two-dimensional atomic layers of boron nitride.
6. The method of claim 5 , further comprising exfoliating the two-dimensional atomic layers of boron nitride from particles of hexagonal boron nitride.
7. The method of claim 6 , further comprising exfoliating the two-dimensional atomic layers of boron nitride from particles of hexagonal boron nitride before providing the boron nitride within the reactor chamber.
8. The method of claim 6 , further comprising exfoliating the two-dimensional atomic layers of boron nitride from particles of hexagonal boron nitride within the reactor chamber.
9. The method of claim 1 , further comprising forming fluorinated boron nitride comprising a hexagonal crystal structure by fluorinating the boron nitride within the reactor chamber.
10. The method of claim 1 , further comprising forming fluorinated boron nitride comprising a cubic crystal structure by fluorinating the boron nitride within the reactor chamber.
11. The method of claim 1 , further comprising:
removing the fluorinated boron nitride from the reactor chamber; and
mixing the fluorinated boron nitride with a surfactant.