Microphone device with single crystal piezoelectric film and method of forming the same
A microphone device may include: a substrate wafer, a support member bonded to a front surface of the substrate wafer, a single-crystal piezoelectric film provided over the support member, a top electrode and a bottom electrode. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The top electrode may be arranged adjacent to the first surface of the single-crystal piezoelectric film. The bottom electrode may be arranged adjacent to the second surface of the single-crystal piezoelectric film. The substrate wafer may have a through-hole formed therein. The through-hole of the substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.
1. A microphone device comprising:
a substrate wafer having a through-hole formed therein;
a support member bonded to a front surface of the substrate wafer;
a single-crystal piezoelectric film provided over the support member, wherein the single-crystal piezoelectric film has a first surface and an opposing second surface;
a top electrode arranged adjacent to the first surface of the single-crystal piezoelectric film; and
a bottom electrode arranged adjacent to the second surface of the single-crystal piezoelectric film;
wherein the support member comprises a plurality of support members;
wherein the plurality of support members are separated from each other by one or more air gaps;
wherein the one or more air gaps are laterally separated from the through-hole of the substrate wafer;
wherein the through-hole of the substrate wafer is at least substantially aligned with at least one of the top electrode and the bottom electrode.
2. The microphone device of claim 1 , further comprising:
a further single-crystal piezoelectric film provided over at least a portion of the top electrode; and
a further electrode arranged over the further single-crystal piezoelectric film.
3. The microphone device of claim 2 , wherein the top electrode at least substantially covers the first surface of the single-crystal piezoelectric film.
4. The microphone device of claim 2 , wherein the further single-crystal piezoelectric film has the same dimensions as the single-crystal piezoelectric film.
5. The microphone device of claim 1 , wherein the plurality of support members comprises multiple silicon pillars, and each silicon pillar of the plurality of support members has side walls that are perpendicular to the front surface of the substrate wafer.
6. The semiconductor device of claim 1 , wherein the plurality of support members comprises multiple silicon pillars, and each silicon pillar is electrically isolated from adjacent support members by one or more air gaps.
7. The microphone device of claim 1 , further comprising:
a bonding layer provided over at least part of the front surface of the substrate wafer;
wherein the support member is bonded to the substrate wafer by the bonding layer.
8. The microphone device of claim 1 , further comprising:
a top passivation layer arranged adjacent to the first surface of the single-crystal piezoelectric film and enclosing the top electrode therein; and
a bottom passivation layer arranged adjacent to the second surface of the single-crystal piezoelectric film and enclosing the bottom electrode therein.
9. The microphone device of claim 1 , further comprising:
a dielectric layer provided adjacent to the single-crystal piezoelectric film.
10. The microphone device of claim 9 , wherein the second surface of the single-crystal piezoelectric film faces the front surface of the substrate wafer, wherein the dielectric layer is adjacent to the first surface of the single-crystal piezoelectric film.
11. The microphone device of claim 10 , wherein the second surface of the single-crystal piezoelectric film faces the front surface of the substrate wafer, wherein the dielectric layer is adjacent to the second surface of the single-crystal piezoelectric film.