Cadmium free reverse type 1 nanostructures with improved blue light absorption for thin film applications

1. A nanostructure comprising:

a core; and

a first shell disposed on the core, the first shell comprising a first semiconductor material comprising InP; and

a second shell disposed on the first shell, the second layer comprising a second semiconductor material,

wherein a band gap energy of the core is greater than a band gap energy of the first shell, and

wherein an optical density at 450 nm per total mass (OD 450 /total mass) of the nanostructure is between about 0.4 and about 0.9.

2. The nanostructure of claim 1 , wherein the core comprises ZnSe.

3. The nanostructure of claim 1 , wherein the core has a diameter of about 4 nm.

4. The nanostructure of claim 1 , wherein the first shell has a thickness of about 0.5 nm.

5. The nanostructure of claim 1 , wherein the second shell has a thickness of about 1 nm.

6. The nanostructure of claim 1 , wherein the second shell comprises ZnSe, ZnS, or a combination thereof.

7. The nanostructure of claim 1 , wherein the OD 450 /total mass of the nanostructure is about 0.7.

8. The nanostructure of claim 1 , wherein a blue transmittance of the nanostructure when present in a film matrix is less than or equal to about 15%, wherein the film matrix has a thickness between about 1 μm and about 25 μm and comprises between about 10% and about 60% of the nanostructure by dry mass, wherein the film matrix has a blue absorbance at 450 nm of less than 1% when not comprising the nanostructure, wherein the blue transmittance is defined as a fraction of an incident light transmitted through the film matrix, and wherein the incident light has a wavelength of about 450 nm.

9. The nanostructure of claim 1 , wherein the nanostructure has an emission wavelength of about 530 nm.

10. The nanostructure of claim 1 , wherein the nanostructure has a photoluminescence quantum yield between 40% and 60%.

11. A device comprising the nanostructure of claim 1 .

12. The device of claim 11 , wherein the device is a display device that comprises a quantum dot color converter comprising:

a back plane;

a display panel disposed on the back plane; and

a quantum dot layer comprising the nanostructure, the quantum dot layer disposed on the display panel.

13. The device of claim 12 , wherein the display device does not comprise a blue light filter.

14. A method of making a ZnSe core nanostructure with a half width at half maximum (HWHM) of an emitted light of less than or equal to about 10 nm, comprising:

(a) admixing a solution of a selenium source, a zinc source, and at least one ligand under a first temperature between about 260° C. and about 340° C.;

(b) adjusting the first temperature of the admixture in (a) to a second temperature between about 260° C. and about 300° C.; and

(c) infusing a solution comprising the selenium source and the zinc source into the admixture in (b) at an infusing rate between about 0.5 mL/min and about 3 mL/min;

to provide the core nanostructure.

15. The method of claim 14 , wherein the HWHM of an emitted light of the ZnSe core nanostructure is about 9 nm.

16. The method of claim 14 , wherein the selenium source is trioctylphosphine selenide, the zinc source is diethylzinc, and the at least one ligand is oleylamine.

17. A method of making a core/shell nanostructure, comprising:

(a) providing a core comprising a ZnSe nanostructure with a half width at half maximum (HWHM) of an emitted light of less than or equal to about 10 nm, and a first ligand;

(b) admixing the core with a zinc carboxylate; and

(c) admixing the admixture in (b) with an indium source and a phosphorus source; and

(d) admixing the admixture in (c) with a zinc source and a sulfur source.

18. The method of claim 17 , wherein the zinc carboxylate is zinc acetate.

19. The method of claim 17 , wherein the indium source is indium chloride.

20. The method of claim 17 , wherein the zinc source is zinc acetate.