IP Library Granted Patent US 12,401,024
Granted Patent B2
US 12,401,024 · App. 16/723,578 · Granted Aug 26, 2025

Negative electrode active material, negative electrode plate and battery

Inventors: Yuqun Zeng (Ningde, CN); Chengdu Liang (Ningde, CN); Yuzhen Zhao (Ningde, CN); Qisen Huang (Ningde, CN); Yingjie Guan (Ningde, CN); Yan Wen (Ningde, CN)
Assignee: CONTEMPORARY AMPEREX TECHNOLOGY (HONG KONG) LIMITED
H01M4/386H01M4/134H01M2004/027
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Quick Facts
Patent No.
US 12,401,024
App. No.
16/723,578
Granted
Aug 26, 2025
Kind
B2
Abstract

The present disclosure provides a negative electrode active material, a battery and a device. The negative electrode active material comprises a first silicon oxide and a second silicon oxide, wherein, a ratio of a particle diameter Dn10 of the first silicon oxide to a particle diameter Dn10 of the second silicon oxide is 8˜25, the particle diameter Dn10 of the first silicon oxide is 1.0 μm˜5.0 μm, the particle diameter Dn10 of the second silicon oxide is 0.05 μm˜0.50 μm. By selecting two kinds of silicon oxides with specific ranges of Dn10 to match with each other, the present disclosure controls the thickness rebound of negative electrode plate, ensures good electrical contact between the negative electrode active material particles, in turn is beneficial to improve the cycle stability and the cycle-life of the battery.

Claims (40)

1. A negative electrode active material, comprising a first silicon oxide and a second silicon oxide;

a ratio of a particle diameter Dn10 of the first silicon oxide to a particle diameter Dn10 of the second silicon oxide is 8˜25, wherein Dn10 represents a particle diameter corresponding to the cumulative quantity percentage reaching 10%;

the particle diameter Dn10 of the first silicon oxide is 1.0 μm˜5.0 μm; and

the particle diameter Dn10 of the second silicon oxide is 0.05 μm˜0.50 μm;

wherein a specific surface area of the negative electrode active material is 1.8 m 2 /g˜5.9m 2 /g; and

a specific surface area of the second silicon is 4.6m 2 /g˜9.4m 2 /g.

2. The negative electrode active material according to claim 1 , wherein

the ratio of the particle diameter Dn10 of the first silicon oxide to the particle diameter Dn10 of the second silicon oxide is 10˜20; and/or

the particle diameter Dn10 of the first silicon oxide is 1.7 μm˜4.5 μm; and/or

the particle diameter Dn10 of the second silicon oxide is 0.10 μm˜0.35 μm.

3. The negative electrode active material according to claim 1 , wherein a particle diameter Dn10 of the negative electrode active material is 0.10 μm˜0.50 μm.

4. The negative electrode active material according to claim 3 , wherein the particle diameter Dn10 of the negative electrode active material is 0.15 μm˜0.36 μm.

5. The negative electrode active material according to claim 1 , wherein,

the first silicon oxide has a particle diameter distribution width of 0.8˜1.2;

and the second silicon oxide has a particle diameter distribution width of 1.0˜1.6;

wherein, the particle diameter distribution width is represented by (Dn90−Dn10)/Dn50.

6. The negative electrode active material according to claim 5 , wherein,

the first silicon oxide has the particle diameter distribution width of 0.9˜1.1; and/or

the second silicon oxide has the particle diameter distribution width of 1.1˜1.5.

7. The negative electrode active material according to claim 5 , wherein the negative electrode active material has a particle diameter distribution width of 1.0˜1.5.

8. The negative electrode active material according to claim 7 , wherein the negative electrode active material has the particle diameter distribution width 1.1˜1.4.

9. The negative electrode active material according to claim 1 , wherein

a ratio of a particle diameter Dv50 of the first silicon oxide to a particle diameter Dv50 of the second silicon oxide is 1.0˜8.0;

and the particle diameter Dv50 of the first silicon oxide is 3.0 μm˜15.0 μm;

and the particle diameter Dv50 of the second silicon oxide is 0.4 μm˜4.0 μm.

10. The negative electrode active material according to claim 9 , wherein

the ratio of the particle diameter Dv50 of the first silicon oxide to the particle diameter Dv50 of the second silicon oxide is 1.5˜7.2; and/or

the particle diameter Dv50 of the first silicon oxide is 4.4 μm˜11.0 μm; and/or

the particle diameter Dv50 of the second silicon oxide is 0.9 μm˜3.5 μm.

11. The negative electrode active material according to claim 1 , wherein a particle diameter Dv50 of the negative electrode active material is 3.5 μm˜10.5 μm.

12. The negative electrode active material according to claim 11 , wherein the particle diameter Dv50 of the negative electrode active material is 4.0 μm˜8.5 μm.

13. The negative electrode active material according to claim 1 , wherein a ratio of a specific surface area of the first silicon oxide to a specific surface area of the second silicon oxide is 1:(1.5˜13.0).

14. The negative electrode active material according to claim 13 , wherein the ratio of the specific surface area of the first silicon oxide to the specific surface area of the second silicon oxide is 1:(1.8˜10.0).

15. The negative electrode active material according to claim 1 , wherein

a specific surface area of the first silicon oxide is 0.4 m 2 /g˜3.2 m 2 /g.

16. The negative electrode active material according to claim 15 , wherein

the specific surface area of the first silicon oxide is 0.8 m 2 /g˜2.5 m 2 /g.

17. The negative electrode active material according to claim 1 , wherein the specific surface area of the negative electrode active material is 2.4 m 2 /g˜5.2 m 2 /g.

18. A battery comprising a negative electrode plate, wherein the negative electrode plate comprises the negative electrode active material according to claim 1 .

19. A device comprising the battery according to claim 18 .

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE NAME OF THE ASSIGNEE PREVIOUSLY RECORDED ON REEL 51411 FRAME 54. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jul 17, 2025
From: ZENG, YUQUN; LIANG, CHENGDU; ZHAO, YUZHEN; HUANG, QISEN; GUAN, YINGJIE; WEN, YAN
To: CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITED
Reel/Frame 072038/0709 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 6, 2024
From: CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITED
To: CONTEMPORARY AMPEREX TECHNOLOGY (HONG KONG) LIMITED
Reel/Frame 068338/0402 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: ZENG, YUQUN; LIANG, CHENGDU; ZHAO, YUZHEN; HUANG, QISEN; GUAN, YINGJIE; WEN, YAN
To: CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITED2
Reel/Frame 051411/0054 →
Priority Claims (1)
CN 201811640052.X · Dec 29, 2018 · national
Continuity (1)
Related Publication 20200212439A1 · Jul 2, 2020
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