FABRICATION OF CORRELATED ELECTRON MATERIAL DEVICES WITH REDUCED INTERFACIAL LAYER IMPEDANCE
Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described, which may be useful in avoiding formation of a potentially resistive oxide layer at an interfacial surface between a conductive substrate, for example, and a correlated electron material.
1 - 24 . (canceled)
25 . A switching device, comprising:
an electrode comprising at least one layer of conductive material; and
a correlated electron material disposed over an interfacial layer of the at least one layer of conductive material, the interfacial layer to comprise a material to inhibit formation of an oxide of the correlated electron material and to inhibit formation of an oxide of the conductive material.
26 . The switching device of claim 25 , wherein the interfacial layer to comprise nitrogen in an atomic concentration of between approximately 0.1% to 10.0%.
27 . The switching device of claim 25 , wherein the interfacial layer to comprise metal oxide or metal oxynitride, or a combination thereof.
28 . The switching device of claim 25 , wherein the interfacial layer to comprise one or more layers of metal oxide or metal oxynitride, or a combination thereof, of an accumulated thickness of less than approximately 10.0 nm.
29 . The switching device of claim 25 , wherein the interfacial layer to comprise one or more layers of NiTiO x N y .
30 . The switching device of claim 25 , wherein the correlated electron material to comprise a film formed from one or more layers, the film to comprise a thickness of between 1.5 nm and 150.0 nm.
31 . A switching device, comprising:
a conductive substrate;
a correlated electron material positioned over the conductive substrate;
a conductive overlay positioned over the correlated electron material;
a first interfacial layer positioned between the conductive substrate and the correlated electron material; and
a second interfacial layer positioned between the correlated electron material and the conductive overlay, wherein the first and second interfacial layers to comprise a barrier to inhibit formation of oxides of the conductive substrate and the conductive overlay.
32 . The switching device of claim 31 , wherein the barrier to inhibit formation of oxides to comprise a nitrogen-based material.
33 . The switching device of claim 31 , wherein the barrier to comprise one or more layers of NiTiO x N y .
34 . The switching device of claim 31 , wherein the conductive substrate and/or the conductive overlay to comprise substantially similar material.
35 . The switching device of claim 34 , wherein the conductive substrate and/or the conductive overlay to comprise titanium nitride.
36 . The switching device of claim 34 , wherein the first interfacial layer or the second interfacial layer, or a combination thereof, to comprise nitrogen in an atomic concentration of between approximately 0.1% to 10.0%.
37 . The switching device of claim 34 , wherein the first interfacial layer or the second interfacial layer, or a combination thereof, to comprise metal oxide or metal oxynitride, or a combination thereof.
38 . The switching device of claim 37 , wherein the first interfacial layer or the second interfacial layer, or a combination thereof, to comprise one or more layers of metal oxide or metal oxynitride, or a combination thereof, of an accumulated thickness of less than approximately 10.0 nm.
39 . The switching device of claim 31 , wherein the conductive substrate and/or conductive overlay to comprise platinum, titanium, copper, aluminum, cobalt, nickel, tungsten, tungsten nitride, cobalt silicide, ruthenium oxide, chromium, gold, palladium, indium tin oxide, tantalum, silver or iridium, or any combination thereof.