IP Library Granted Patent US 11,133,346
Granted Patent B2
US 11,133,346 · App. 16/729,713 · Granted Sep 28, 2021

Stacked-die image sensors with shielding

Inventors: Raminda Madurawe (Sunnyvale, CA); Richard Mauritzson (Meridian, ID)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L27/14643H01L25/043H01L27/14623H01L27/14625H01L27/14636
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Quick Facts
Patent No.
US 11,133,346
App. No.
16/729,713
Filed
Dec 30, 2019
Granted
Sep 28, 2021
Kind
B2
Examiner
PARK, SAMUEL
Art Unit
2818
USPC
257/292
Abstract

A stacked-die image sensor may be provided with an array of image pixels. The stacked-die image sensor may include at least first and second integrated circuit dies stacked on top of one another. Some of the pixel circuitry in each pixel may be formed in the first integrated circuit die and some of the pixel circuitry in each pixel may be formed in the second integrated circuit die. Coupling structures such as conductive pads may electrically couple the pixel circuitry in the first integrated circuit die to the pixel circuitry in the second integrated circuit die. A shielding structure may partially or completely surround each conductive pad to reduce parasitic capacitive coupling between adjacent conductive pads. The shielding structure may be a metal wire coupled to a ground voltage. The shielding structure may extend between columns of image pixels and/or between rows of image pixels.

Claims (20)

1. An array of image pixels, comprising:

first and second image pixels each including:

a photosensitive element in a first integrated circuit die,

a floating diffusion region in the first integrated circuit die,

a first transistor that couples the photosensitive element to the floating diffusion region,

a source follower transistor that is coupled to the floating diffusion region and disposed in the first integrated circuit die,

a row select transistor in a second integrated circuit die, the second integrated circuit die stacked on the first integrated circuit die, and

a pixel output line coupled to the row select transistor, the pixel output line disposed in the second integrated circuit die; and

a shared coupling structure at an interface of the first and second integrated circuit dies associated with the first and second image pixels, wherein the shared coupling structure is coupled to the source follower transistor in the first image pixel and is coupled to the source follower transistor in the second image pixel.

2. The array of image pixels defined in claim 1 , further comprising a third image pixel coupled to the shared coupling structure.

3. The array of image pixels defined in claim 2 , further comprising a fourth image pixel coupled to the shared coupling structure, wherein the first, second, third, and fourth image pixels are arranged in a two-by-two cluster.

4. The array of image pixels defined in claim 1 , further comprising a shielding structure that separates the shared coupling structure from an additional shared coupling structure.

5. The array of image pixels defined in claim 4 , wherein the shielding structure is connected to a controlled voltage.

6. The array of image pixels defined in claim 1 , further comprising:

a plurality of additional image pixels; and

a plurality of additional shared coupling structures, the plurality of additional shared coupling structures each shared by a corresponding set of image pixels in the plurality of additional image pixels.

7. The array of image pixels defined in claim 6 , wherein the shared coupling structure and the plurality of additional shared coupling structures are arranged in rows and columns of coupling structures in a plan view.

8. The array of image pixels defined in claim 7 , further comprising:

a vertical shielding that runs along the columns of coupling structures in the plan view; and

a horizontal shielding that runs along the rows of coupling structures in the plan view.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 054090, FRAME 0617 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064081/0167 →
SECURITY INTEREST Recorded Oct 16, 2020
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION; ON SEMICONDUCTOR CONNECTIVITY SOLUTIONS, INC.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 054090/0617 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 30, 2019
From: MADURAWE, RAMINDA; MAURITZSON, RICHARD
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 051384/0860 →