Burst mode spectral excursion mitigation
Techniques are described for configuring an optical network unit (ONU) in a pre-burst state prior to transitioning the ONU to a burst-on state. During the pre-burst state, a laser emitter of the ONU stabilizes to its wavelength, thereby reducing the impact of wavelength drift when the ONU transitions to the burst-on state.
1. An optical network unit (ONU) comprising:
a laser emitter;
a laser driver coupled to the laser emitter;
an optical attenuator having an attenuation state and a non-attenuation state; and
a controller configured to:
configure the ONU in a pre-burst state, wherein, in the pre-burst state, the controller configures the laser driver to flow current through the laser emitter, and the controller configures the optical attenuator to be in the attenuation state after the ONU has been in a burst-off state, wherein, in the burst-off state, the current through the laser emitter is reduced such that an amount of optical power outputted by the laser emitter is less than an optical power threshold; and
subsequent to the pre-burst state, configure the ONU in a burst-on state, wherein in the burst-on state, the controller configures the laser driver to flow current through the laser emitter, and the controller configures the optical attenuator to be in the non-attenuation state, wherein in the burst-on state, the current through the laser emitter is increased such that the amount of optical power outputted by the laser emitter is greater than or equal to the optical power threshold.
2. The ONU of claim 1 , wherein the optical attenuator is at least one of a semiconductor optical amplifier (SOA), a micro-electro-mechanical systems (MEMs) attenuator, or a liquid crystal shutter.
3. The ONU of claim 1 , wherein the controller is configured to configure the ONU in the pre-burst state a threshold amount of time before configuring the ONU in the burst-on state.
4. The ONU of claim 3 , wherein the threshold amount of time is within a range of 1 to 10 microseconds.
5. The ONU of claim 1 , wherein the controller is configured to configure the optical attenuator in the attenuation state a threshold amount of time before transitioning the ONU from the burst-on state to the burst-off state.
6. The ONU of claim 5 , wherein the threshold amount of time is less than 100 nanoseconds.
7. The ONU of claim 1 , wherein in the pre-burst state, the controller configures the laser driver to flow both bias current and modulation current through the laser emitter to output a predefined signal.
8. The ONU of claim 1 , wherein in the pre-burst state, the controller configures the laser driver to flow bias current through the laser emitter and configures an external modulator to output a predefined signal.
9. The ONU of claim 1 , wherein in the pre-burst state, the controller configures the laser driver to flow a bias current in the pre-burst state that is based on both a bias current during the burst-on state and a modulation current during the burst on-state.
10. The ONU of claim 9 , wherein the bias current in the pre-burst state is equal to the bias current during the burst-on state plus half of the modulation current during the burst-on state.
11. A method comprising:
configuring, with a controller, an optical network unit (ONU) in a pre-burst state, wherein configuring the ONU in the pre-burst state comprises:
configuring a laser driver of the ONU to flow current though a laser emitter of the ONU; and
configuring an optical attenuator to be in an attenuation state after the ONU has been in a burst-off state, wherein, in the burst-off state, the current through the laser emitter is reduced such that an amount of optical power outputted by the laser emitter is less than an optical power threshold; and
subsequent to the pre-burst state, configuring, with the controller, the ONU in a burst-on state, wherein configuring the ONU in the burst-on state comprises:
configuring the laser driver to flow current through the laser emitter; and
configuring the optical attenuator to be in a non-attenuation state, wherein in the burst-on state, the current through the laser emitter is increased such that the amount of optical power outputted by the laser emitter is greater than or equal to the optical power threshold.
12. The method of claim 11 , wherein the optical attenuator is at least one of a semiconductor optical amplifier (SOA), a micro-electro-mechanical systems (MEMs) attenuator, or a liquid crystal shutter.
13. The method of claim 11 , wherein configuring the ONU in the pre-burst state comprises configuring the ONU in the pre-burst state a threshold amount of time before configuring the ONU in the burst-on state.
14. The method of claim 13 , wherein the threshold amount of time is within a range of 1 to 10 microseconds.
15. The method of claim 11 , further comprising:
configuring the optical attenuator to be in the attenuation state a threshold amount of time before transitioning the ONU from the burst-on state to the burst-off state.
16. The method of claim 15 , wherein the threshold amount of time is less than 100 nanoseconds.
17. The method of claim 11 , further comprising:
in the pre-burst state, configuring the laser driver to flow both bias current and modulation current through the laser emitter to output a predefined signal in the pre-burst state.
18. The method of claim 11 , further comprising, in the pre-burst state:
configuring the laser driver to flow bias current through the laser emitter; and
configuring an external modulator to output a predefined signal.
19. The method of claim 11 , further comprising:
in the pre-burst state, configuring the laser driver to flow a bias current in the pre-burst state that is based on both a bias current during the burst-on state and a modulation current during the burst on-state.
20. A non-transitory computer-readable storage medium storing instructions thereon that when executed cause a controller of an optical network unit (ONU) to: configure the ONU in a pre-burst state, wherein the instructions that cause the controller to configure the ONU in the pre-burst state comprise instructions that cause the controller to: configure a laser driver of the ONU to flow current though a laser emitter of the ONU; and configure an optical attenuator to be in an attenuation state after the ONU has been in a burst-off state, wherein, in the burst-off state, the current through the laser emitter is reduced such that an amount of optical power outputted by the laser emitter is less than an optical power threshold; and subsequent to the pre-burst state, configure the ONU in a burst-on state, wherein the instructions that cause the controller to configure the ONU in the burst-on state comprise instructions that cause the controller to: configure the laser driver to flow current through the laser emitter; and configure the optical attenuator to be in a non-attenuation state, wherein in the burst-on state, the current through the laser emitter is increased such that the amount of optical power outputted by the laser emitter is greater than or equal to the optical power threshold.