Semiconducting devices containing quantum wells
The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.
1. A device comprising, in order:
an emitter layer;
a quantum well; and
a base layer, wherein:
the emitter layer has a first bandgap,
the base layer has a second bandgap, and
the first bandgap is different than the second bandgap by an absolute difference between about 25 meV and about 100 meV.
2. The device of claim 1 , wherein the absolute difference is between about 25 meV and about 50 meV.
3. The device of claim 1 , wherein the emitter layer comprises silicon- doped GaAs.
4. The device of claim 1 , wherein the base layer comprises zinc-doped GaInP.
5. The device of claim 1 , wherein the second bandgap is between about 1.0 eV and about 2.2 eV.
6. The device of claim 5 , wherein the second bandgap is about 1.8 eV.
7. The device of claim 1 , wherein the emitter layer has a thickness between about 0.5 μm and about 0.2 μm.
8. The device of claim 1 , wherein the base layer has a thickness between about 0.05 μm and about 0.2 μm.
9. The device of claim 1 , wherein the device comprises at least one of a solar cell, a transistor, a light-emitting diode, a laser, or a sensor.
10. The device of claim 1 , wherein the first bandgap is between about 1.0 eV and about 1.5 eV.
11. The device of claim 10 , wherein the first bandgap is about 1.4 eV.
12. The device of claim 1 , wherein the quantum well comprises a well layer positioned between a first barrier layer and a second barrier layer.
13. The device of claim 12 , wherein the well layer comprises undoped GaInAs.
14. The device of claim 12 , wherein the first barrier layer and the second barrier layer.